Datasheet FDP26N40, FDPF26N40 Datasheet (Fairchild)

tm

FDP26N40 / FDPF26N40

N-Channel MOSFET

400V, 26A, 0.16Ω

FDP26N40 / FDPF26N40 N-Channel MOSFET

February 2008

TM

UniFET

Features

•R

• Low gate charge ( Typ. 48nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A

DS(on)

( Typ. 30pF)

rss

G

D

S

Symbol Parameter FDP26N40 FDPF26N40 Units

Drain to Source Voltage 400 V Gate to Source Voltage ±30 V

Drain Current Drain Current - Pulsed (Note 1) 104 104* A

Single Pulsed Avalanche Energy (Note 2) 1352 mJ Avalanche Current (Note 1) 26 A Repetitive Avalanche Energy (Note 1) 26.5 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220 FDP Series

C

= 25

D

G

S

o

C unless otherwise noted*

-Continuous (T

(T

= 25oC) 265 40 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.

D

G

TO-220F FDPF Series

= 25oC) 26 26*

C

= 100oC) 15.6 15.6*

C

o

C2.00.3W/

300

S

o

Thermal Characteristics

Symbol Parameter FDP26N40 FDPF26N40 Units

R

θJC θCS

R

θJA

Thermal Resistance, Junction to Case 0.5 3.0 Thermal Resistance, Case to Sink Typ. 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

o

C

C C

www.fairchildsemi.com1

FDP26N40 / FDPF26N40 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP26N40 FDP26N40 TO-220 - - 50

FDPF26N40 FDPF26N40 TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 400 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.5-V/

D

V

= 400V, V

DS

= 320V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V Static Drain to Source On Resistance VGS = 10V, ID = 13A - 0.13 0.16 Ω Forward Transconductance VDS = 20V, ID = 13A (Note 4) - 25.5 - S

Input Capacitance Output Capacitance - 390 520 pF Reverse Transfer Capacitance - 30 45 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 320V, ID = 26A

Gate to Source Gate Charge - 15 - nC Gate to Drain “Miller” Charge - 20 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 2400 3185 pF

-4860nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time Turn-On Rise Time - 100 210 ns Turn-Off Delay Time - 115 240 ns Turn-Off Fall Time - 66 140 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4mH, I 3: I

≤ 26A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 26 A Maximum Pulsed Drain to Source Diode Forward Current - - 104 A Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 5.17 - µC

= 26A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 200V, ID = 26A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 26A - - 1.4 V

SD

= 26A

SD

- 45 100 ns

- 406 - ns

FDP26N40 / FDPF26N40 Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

70

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

10

6.0 V

5.5 V

1

,Drain Current[A]

D

I

*Notes:

µs Pulse Test

1. 250

2. T

= 25oC

0.1

0.02

0.1 1 10

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.35

100

25oC

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

10

,Drain Current[A]

D

I

1

456789

150oC

VGS,Gate-Source Voltage[V]

100

FDP26N40 / FDPF26N40 N-Channel MOSFET

0.30

150oC

0.25

[Ω],

0.20

DS(ON)

R

VGS = 10V

0.15

VGS = 20V

Drain-Source On-Resistance

0.10 0 20406080

*Note: TJ = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

1

0.2 0.6 1.0 1.4

VSD, Body Diode Forward Voltage [V]

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

2000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

C

Capacitances [pF]

1000

0

0.1 1 10

C

VDS, Drain-Source Voltage [V ]

oss

rss

gd

*Note:

= 0V

1. V

GS

iss

2. f = 1MH z

30

10

8

VDS = 100V V

= 200V

DS

= 320V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 1020304050

*Note: ID = 26A

Qg, Total Gate Char g e [nC]

FDP26N40 / FDPF26N40 Rev. A

3

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDP26N40 / FDPF26N40 N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -25 25 75 125 175 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

= 0V

GS

= 250µA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-75 -25 25 75 125 175 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 10V

GS

= 13A

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area

- FDP26N40

300

100

10

Operation in This Area

1

, Drain Current [A]

D

I

is Limited by R

DS(on)

0.1

0.01 1 10 100

VDS, Drain-Source Voltage [V]

1ms

10ms

DC

*Notes:

= 25oC

1. T

C

= 150oC

2. T

J

3. Single Pulse

10µs

100µs

800

28

24

20

16

12

, Drain Current [A]

8

D

I

4

0

25 50 75 100 125 150

TC, Case Temperatu re [oC]

Figure 11. Transient Thermal Response Curve - FDP26N40

FDP26N40 / FDPF26N40 Rev. A

]

θJC

Thermal Response [Z

0.002

0.1

0.01

1

0.5

0.2

0.1

0.05

0.02

Single pulse

-5

10

0.01

P

DM

t

1

t

*Notes:

1. Z

θJC

2. Duty Fact or, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

2

(t) = 0.5oC/W Max.

1/t2

θJC

0

10

Rectangular Pulse Duration [sec]

4

(t)

1

10

www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDP26N40 / FDPF26N40 N-Channel MOSFET

FDP26N40 / FDPF26N40 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

V

DS

_

L

LL

Sam e Type

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

Driver

G

DUT

I

SD

V

DD

FDP26N40 / FDPF26N40 N-Channel MOSFET

V

GS

( D rive r )

I

SD

( D U T )

V

DS

( DUT )

G ate Pulse W idth

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body D iode R ecovery dv/dt

V

SD

Body Diode

Forward Volta

e Dro

di/dt

10V

V

DD

FDP26N40 / FDPF26N40 Rev. A

6

www.fairchildsemi.com

Mechanical Dimensions

FDP26N40 / FDPF26N40 N-Channel MOSFET

TO - 220

FDP26N40 / FDPF26N40 Rev. A

Dimensions in Millimeters

7

www.fairchildsemi.com

Mechanical Dimensions

0

10.16

±0.1

3.30

±0.20

(7.00)

TO-220F

ø3.18

±0.10

±0.20

6.68

2.54 (0.70)

FDP26N40 / FDPF26N40 N-Channel MOSFET

±0.20

(1.00x45°)

15.87

15.80

MAX1.47

±0.30

0.80

±0.10

9.75

(30°)

#1

0.35

2.54TYP

±0.20

[2.54

±0.10

2.54TYP

]

9.40

±0.20

[2.54

±0.20

]

0.50

+0.10 –0.05

2.76

±0.2

4.70

FDP26N40 / FDPF26N40 Rev. A

Dimensions in Millimeters

8

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

®

ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

®

EZSWITCH™ *

™

®

Fairchild Fairchild Semiconduct or FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter

® ®

® *

®

* EZSWITCH™ and FlashWriter

FPS™

®

FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

PDP-SPM™ Power220 POWEREDGE Power-SPM™ PowerTrench Programmable Active Droop™ QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

SupreMOS™ SyncFET™

The Power Franchise

®

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC Ultra FRFET™ UniFET™ VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PR ODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF AN Y PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIG HTS OF OTH ERS. THESE SPECIFICATIO NS DO N OT EXPAN D THE TERM S OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFIC ALLY THE WARRANTY THER EIN, WHICH COVERS TH ESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical im plant into the body or (b) support or sustain lif e, and (c) whose failure to perform when properly used in accordance with instructi ons for use

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the fail ure of the life support device or system, or to affect its s afety or effectiveness.

provided in the labeling, can be reasonably expected to result in a signific ant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Desi gn

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

This datasheet contains the design specificati ons for product development. Specif i cations may change in any manner without notice.

This datasheet contains prelim inary data; supplementary data will be published at a later date. Fairc hi l d Semiconductor reserves the right to make changes at any ti me without notice to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet i s printed for reference information only.

Rev. I33

®