Page 1
FDP10N50F / FDPF10N50FT N-Channel MOSFET
D
G
S
TO-220F
FDPF Series
G
S
D
TO-220
FDP Series
G D S
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
•R
• Low Gate Charge ( Typ. 18nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
= 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
DS(on)
( Typ. 10pF)
rss
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
January 2009
TM
UniFET
MOSFET Maximum Ratings T
Symbol Parameter FDP10N50F FDPF10N50FT Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 36 36* A
Single Pulsed Avalanche Energy (Note 2) 364 mJ
Avalanche Current (Note 1) 9 A
Repetitive Avalanche Energy (Note 1) 12.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 125 42 W
C
- Derate above 25
= 25oC) 9 9*
C
= 100oC) 5.4 5.4*
C
o
C1.00.33W/
300
o
o
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.0 3.0
Thermal Resistance, Junction to Ambient 62.5 62.5
FDP10N50F FDPF10N50FT
Units
o
C/W
A
o
C
C
C
©2009 Fairchild Semiconductor Corporation
FDP10N50F / FDPF10N50FT Rev. A
www.fairchildsemi.com1
Page 2
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP10N50F FDP10N50F TO-220 - - 50
FDPF10N50FT FDPF10N50FT TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.5-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 100
V
DS
= 0V - - 10
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.71 0.85 Ω
Forward Transconductance VDS = 20V, ID = 4.5A (Note 4) -8.5-S
Input Capacitance
Output Capacitance - 120 160 pF
Reverse Transfer Capacitance - 10 15 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 10A
Gate to Source Gate Charge - 5 - nC
Gate to Drain “Miller” Charge - 7.5 - nC
DS
V
= 10V
GS
( Note 4 , 5)
- 880 1170 pF
-1824nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 40 90 ns
Turn-Off Delay Time - 45 100 ns
Turn-Off Fall Time - 30 70 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 9mH, I
≤ 8A, di/dt ≤ 200A/μs, VDD ≤ BV
3: I
SD
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 9 A
Maximum Pulsed Drain to Source Diode Forward Current - - 60 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.2 - μC
= 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 10A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 9A - - 1.5 V
SD
= 9A
SD
-2050ns
-95-ns
FDP10N50F / FDPF10N50FT Rev. A
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
0.1 1 10
0.1
1
10
20
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25oC
V
GS
=
15.0 V
12.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
246810
0.1
1
10
30
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
0 4 8 121620
0.6
0.8
1.0
1.2
1.4
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[
Ω
]
,
Drain-Source On-Resistance
ID, Drain Current [A]
0.0 0.4 0.8 1.2 1.6
0.1
1
10
30
*Notes:
1. VGS = 0V
2. 250
μ
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1
110
30
0
500
1000
1500
2000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted
)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 4 8 12 16 20
0
2
4
6
8
10
*Note: ID = 10A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP10N50F / FDPF10N50FT Rev. A
3
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Page 4
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature
[
o
C
]
1 10 100 1000
0.01
0.1
1
10
50
DC
10ms
1ms
100μs
20μs
*Notes:
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
I
D
, Drain Current [A]
TC, Case Temperature
[
o
C
]
10
-5
10
-4
10
-3
10
-2
10
-1
11010
2
0.005
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θ
JC
(t) = 3.0oC/W Max.
2. Duty Factor, D= t
1/t2
3. TJM - TC = PDM * Z
θ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
JC
]
Rectangular Pulse Duration [sec]
5
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area
vs. Temperature - FDPF10N50FT
Figure 9. Maximum Drain Current
vs. Case Temperature
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Figure 10. Transient Thermal Response Curve - FDPF10N50FT
FDP10N50F / FDPF10N50FT Rev. A
4
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Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP10N50F / FDPF10N50FT N-Channel MOSFET
FDP10N50F / FDPF10N50FT Rev. A
5
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Page 6
DUT
V
DS
+
_
Driver
R
G
Same Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Voltage D rop
V
SD
IFM, Body Diode Forw ard C urrent
Body D iode R everse Current
I
RM
Body Diode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Voltage D rop
V
SD
IFM, Body Diode Forw ard C urrent
Body D iode R everse Current
I
RM
Body Diode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
FDP10N50F / FDPF10N50FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP10N50F / FDPF10N50FT Rev. A
6
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Page 7
Mechanical Dimensions
TO-220
FDP10N50F / FDPF10N50FT N-Channel MOSFET
FDP10N50F / FDPF10N50FT Rev. A
7
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Page 8
Package Dimensions
FDP10N50F / FDPF10N50FT N-Channel MOSFET
TO-220F Potted
* Front/Back Side Isolation Voltage : 2700V
FDP10N50F / FDPF10N50FT Rev. A
Dimensions in Millimeters
8
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Page 9
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tm
tm
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intended to be an exhaustive list of all such trademarks.
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®
®
®
®
®
*
®
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* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
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®
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™
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDP10N50F / FDPF10N50FT N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDP10N50F / FDPF10N50FT Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I38
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