Page 1
0
May 2008
FDP8880 / FDB8880
FDP8880 / FDB 8880
N-Channel PowerTrench
30V, 54A, 11.6mΩ
Features
r
= 14.5mΩ, V
DS(ON)
r
= 11.6mΩ, V
DS(ON)
High pe rformance trench tech nology for e xtremely low
r
DS(ON)
Low gat e ch arge
High power and current handling capability
RoHS Complicant
= 4.5V, ID = 40A
GS
= 10V, ID = 40A
GS
®
MOSFET
General Description
This N- Channe l MOSF ET has been desig ned sp ecif icall y to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
contro llers. It ha s be en optimize d for low gate cha r ge , low
r
and fast switching speed.
DS(ON)
Application
DC / DC Converters
tmM
DRAIN
(FLANGE)
GATE
SOURCE
TO-263AB
FDB SERIES
©2008 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A1
(FLANGE)
DRAIN
1
TO-220AB
FDP SERIES
DRAIN
GATE
SOURCE
D
G
S
www.fairchildsemicom
Page 2
FDP8880 / FDB8880
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Sou r c e Voltage 30 V
Gate to Source Voltage ±20 V
Drain Cur re nt
Continuous (T
I
D
Continuous (T
Continuous (T
= 25oC, VGS = 10V)
C
= 25oC, VGS = 4.5V) 48 A
C
= 25oC, VGS = 10V, with R
amb
= 43oC/W) 11 A
θJA
54 A
Pulsed Figure 4 A
E
AS
P
D
T
, T
J
STG
Single Pulse Avalanche Energy (Note 1) 31 mJ
Power dissipation 55 W
Derate above 25
o
C0.37W/
Operating and Storage Temperature -55 to 175
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-220,TO-263 2.73
Thermal Resistance Junction to Am bient TO-220,TO-262 ( Note 2) 62
Thermal Resistance Junction to Am bient TO-263, 1in2 copper pad ar ea 43
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8880 FDP8880 TO-220AB Tube N/A 50 units
FDB8880 FDB8880 TO-263AB 330mm 24mm 800 units
F
F
o
C/W
o
C/W
o
C/W
o
C
o
C
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Condit ions Min Typ Max Units
Off Characteristics
B
I
DSS
I
GSS
VDSS
Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 30 - - V
V
= 24V - - 1
Zero Gate Voltage Drain Current
DS
= 0V TC = 150oC- -250
V
GS
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Vo ltage VGS = VDS, ID = 250µA 1.2 - 2.5 V
I
= 40A, VGS = 10V - 0.0095 0.011 6
D
= 40A, VGS = 4.5V - 0.012 0.0145
I
Drain to S ou r c e On Re si st ance
D
I
= 40A, VGS = 10V,
D
T
= 175oC
J
- 0.015 0.019
µA
Ω
©2008 Fairchild Semiconductor Corporation
DP8880 / FDB8880 Rev. A
F
1
2
www.fairchildsemicom
Page 3
Dynamic Characteristics
C
C
C
R
Q
Q
Q
Q
Q
Q
ISS
OSS
RSS
G
g(TOT)
g(5)
g(TH)
gs
gs2
gd
Input Capacitance
Output Capacit ance - 255 - pF
Reverse Transfer Capacitance - 147 - pF
Gate Resistance VGS = 0.5V, f = 1MHz - 2.7 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 12 16 nC
Threshold Gate Charge VGS = 0V to 1V - 1.6 2.1 nC
Gate to Source Gate Charg e - 3.2 - nC
Gate Charge Threshold to Plateau - 2.0 - nC
Gate to Drain “Miller” Charge - 4.8 - nC
= 15V, VGS = 0V,
V
DS
f = 1MHz
V
DD
I
= 40A
D
= 1.0m A
I
g
FDP8880 / FDB8880
- 1240 - pF
-2229nC
= 15V
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 107 - ns
Turn-Off Delay Time - 47 - ns
Fall Time - 51 - ns
Turn-Off Time - - 147 ns
(VGS = 10V)
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Notes:
1: Starting TJ = 25°C, L = 34uH, IAS = 43A,Vdd = 27V, Vgs = 10V.
2: Pulse width = 100s.
3
Source to Drain Diode Voltage
Reverse Recovery Time ISD = 40A, dISD/dt = 100A/µs- -27ns
Reverse Recovered Charge ISD = 40A, dISD/dt = 100A/µs- -18nC
--171ns
= 15V, ID = 40A
V
DD
= 10V, RGS = 13.6Ω
V
GS
I
= 40A - - 1.25 V
SD
I
= 3.5A - - 1.0 V
SD
©2008 Fairchild Semiconductor Corporation
DP8880 / FDB8880 Rev. A
F
1
3
www.fairchildsemicom
Page 4
FDP8880 / FDB8880
Typical Characteristics T
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0255075100 175
TC, CASE TEMPERATURE (oC)
= 25°C unless otherwise noted
C
150
125
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
SINGLE PULSE
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
60
40
20
, DRAIN CURRENT (A)
D
I
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Curr ent vs
Case Temperature
P
DM
t
1
t
x R
2
2
+ T
θJC
C
1
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
0
Figure 3. Normalized Maximum Transient Thermal Impedance
600
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 4.5V
, PEAK CURRENT (A)
100
DM
I
50
-5
10
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
-4
10
1
VGS = 10V
-3
10
-2
10
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
4
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I
-1
10
175 - T
25
150
0
10
C
1
10
www.fairchildsemicom
Page 5
FDP8880 / FDB8880
Typical Characteristics T
400
100
10
OPERATION IN THIS
AREA MAY BE
, DRAIN CURRENT (A)
D
I
LIMITED BY r
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
11040
Figure 5. Forward Bias Safe Operating Area
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 15V
DD
60
40
, DRAIN CURRENT (A)
D
I
20
TJ = 25oC
DS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = 175oC
= 25°C unless otherwise noted
C
10µs
100µs
1ms
10ms
DC
TJ = -55oC
500
100
10
, AVALANCHE CURRENT (A)
AS
I
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
160
120
80
, DRAIN CURRENT (A)
D
I
40
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV
STARTING TJ = 150oC
1
0.001 0.01 0.1 1
tAV, TIME IN AVALANCHE (ms)
DSS
- VDD)
Capability
VGS = 4.5V
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
- VDD) +1]
DSS
ST ARTING TJ = 25oC
10
VGS = 3.5V
VGS = 3V
TC = 25oC
100
0
1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Charact eristics Figure 8. Saturation Characteristics
20
ID = 54A
16
, DRAIN TO SOURCE
12
ON RESISTANCE (mΩ)
DS(ON)
r
ID = 5A
8
246810
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Figure 9. Drain to So urce On Resistance vs Gate
Voltage and Drain Current
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
1
4.0
VGS = 2.5V
0
0 0.25 0.5 0.75 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.7
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.53
1.36
1.19
ON RESISTANCE
1.02
0.85
NORMALIZED DRAIN TO SOURCE
0.7
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
VGS = 10V, ID = 54A
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
www.fairchildsemicom
Page 6
FDP8880 / FDB8880
Typical Characteristics T
1.5
1.2
0.9
NORMALIZED GATE
THRESHOLD VOLTAGE
0.6
0.3
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
= 25°C unless otherwise noted
C
VGS = VDS, ID = 250µA
Figure 11. Normalized G ate Threshol d Voltage vs
Junction Temperature
2000
C
= CGS + C
1000
ISS
C
OSS
≅ C
GD
+ C
DS
GD
1.1
ID = 250µA
1.0
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
0.9
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
VDD = 15V
8
6
C
= C
RSS
GD
C, CAPACITANCE (pF)
V
= 0V, f = 1MHz
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Sour ce
Voltage
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
30
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
WAVEFORMS IN
DESCENDING ORDER:
ID = 54A
ID = 5A
Figure 14. Gat e Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
1
6
www.fairchildsemicom
Page 7
Test Circuits and Waveforms
V
DS
L
VARY tP TO OBTAIN
REQUIRED PEAK I
V
GS
R
AS
G
+
V
DD
-
I
AS
DUT
t
0V
P
I
AS
0.01Ω
0
Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms
V
DS
V
DD
L
V
I
g(REF)
GS
DUT
+
V
DD
-
V
GS
0
I
g(REF)
= 1V
Q
gs2
Q
g(TH)
Q
gs
Q
0
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms
BV
DSS
t
P
t
AV
Q
g(TOT)
V
DS
Q
g(5)
V
V
GS
VGS = 5V
gd
FDP8880 / FDB8880
DS
V
DD
V
= 10V
GS
V
GS
R
GS
V
GS
Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
1
V
DS
R
L
+
V
DD
-
V
DS
0
DUT
V
GS
10%
0
7
t
d(ON)
90%
t
ON
t
r
t
d(OFF)
t
OFF
t
f
90%
10%
10%
90%
PULSE WIDTH
50%50%
www.fairchildsemicom
Page 8
PSPICE Electrical Model
.SUBCKT FDP8880 2 1 3 ; rev October 2004
Ca 12 8 9.5e-10
Cb 15 14 9.5e-10
Cin 6 8 1.15e-9
Dbod y 7 5 Dbody M OD
Dbreak 5 11 D breakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 32.88
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgat e 1 9 5.3e-9
Ldrain 2 5 1.0e -9
Lsou rce 3 7 1.7e-9
RLgate 1 9 53
RLdr ai n 2 5 10
RLsource 3 7 17
Mmed 16 6 8 8 M m edMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1.0e-3
Rgate 9 20 2.2
RSLC1 5 51 RSL CM OD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 6.8e-3
Rvthres 22 8 RvthresMO D 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BM OD
S2a 6 15 14 13 S2AM OD
S2b 13 15 14 13 S2BM OD
Vbat 22 19 DC 1
GATE
1
LGATE
RLGATE
RGATE
9
CA
-
ESG
+
EVTEMP
+
-
18
22
20
S1A
12
13814
S1B
EGS EDS
13
6
8
10
RSLC2
6
13
+
+
6
8
-
-
DPLCAP
EVTHRES
+
19
8
S2A
S2B
15
CIN
CB
-
+
-
5
51
5
51
21
MSTRO
14
5
8
RSLC1
+
ESLC
50
RDRAIN
16
8
MMED
DBREAK
EBREAK
MWEAK
RSOURCE
RBREAK
17 18
IT
8
RVTHRES
FDP8880 / FDB8880
LDRAIN
RLDRAIN
11
+
17
DBODY
18
-
LSOURCE
7
RLSOURCE
RVTEMP
19
VBAT
+
22
DRAIN
2
SOURCE
3
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))* (P WR(V(5,51)/(1e-6*170),5))}
.MODEL DbodyMOD D (IS=3E-12 IKF=10 N=1.01 RS=5e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=4.8e-10 M=0.55 TT=1e -11 XTI=2)
.MODEL DbreakMOD D (RS= 0.2 TRS1=1e-3 TRS2=-8.8e-6)
.MODEL DplcapMOD D (CJO=5.5e-10 IS=1e-30 N=10 M=0.45)
.MODEL Mstro M OD NMOS (VTO=2.10 K P =170 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedM OD NMOS (VTO=1.75 KP=10 IS=1 e-30 N=10 TOX=1 L=1u W=1u RG=2.2)
.MODEL Mwe akMOD NMOS (VTO =1.39 KP=0. 05 IS=1e-30 N= 10 TO X = 1 L=1u W=1u RG=22 RS=0.1)
.MODEL RbreakMOD RES (TC1=8.0e-4 TC2=-8e-7)
.MODEL Rd rai nMOD RES (TC1=-12e-3 TC2=.35e-4)
.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)
.MODEL RvtempMOD RES (TC1=-2.78 e-3 TC2=1.5e-6)
.MODEL RvthresMOD RES (TC1=-1e -3 T C2=-8.2e-6)
MODEL S1AMOD VSWITCH (RON=1e- 5 ROFF =0. 1 VON=- 4 VOF F=-3 .5 )
.MODEL S1BMOD VSWITC H (RON= 1e- 5 ROFF = 0.1 VON= - 3. 5 VOFF =-4 )
.MODEL S2AMOD VSWITC H (RON =1e- 5 ROF F= 0. 1 VON=- 1. 3 VOFF =-0 .8 )
.MODEL S2BMOD VSWITC H (RON =1e- 5 ROF F= 0. 1 VON=- 0. 8 VOFF =-1 .3 )
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Rec o rds, 1991, writ ten by William J. Hepp and C. Frank
Wheatley.
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
1
8
www.fairchildsemicom
Page 9
SABER Electrical Model
rev October 2004
template FDP8880 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=3e-12,ikf=10,nl=1.01,rs=5e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-11,xti=2)
dp..model dbreakmod = (rs=0.2,trs1=1e-3 ,t rs 2=-8.8e-6)
dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45)
m..model mstrongmod = (type=_n,vto=2.10,kp=170,is=1e-30, tox=1)
m..model mmedmod = (type=_n,vto=1.75,kp=10,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.39,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp.. mo del s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)
sw_vcsp.. mo del s1bmod = (ron=1e-5,roff=0.1,von=-3.5, vof f =-4)
sw_vcsp.. mo del s2amod = (ron=1e-5,roff=0.1,von=-1.3, vof f =-0.8)
sw_vcsp.. mo del s2bmod = (ron=1e-5,roff=0.1,von=-0.8, vof f =-1.3)
c.ca n12 n8 = 9. 5e-10
c.cb n15 n14 = 9.5e-10
c.cin n6 n8 = 1.15 e-9
dp.dbody n7 n5 = model=dbodym od
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 32.88
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
GATE
1
LGATE
9
RLGATE
RGATE
ESG
EVTEMP
+
18
22
20
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
CA
S1A
12
S1B
l.lgate n1 n9 = 5.3e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 1.7e-9
res.rlgate n1 n9 = 53
res.rldrai n n2 n5 = 10
res.rlsource n3 n7 = 17
m.mmed n16 n6 n8 n8 = m odel=mmedm od, l= 1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l= 1u, w=1u
m.mweak n16 n21 n8 n8 = model=mwea kmod, l=1u, w=1u
DPLCAP
10
RSLC2
6
8
EVTHRES
+
+
19
8
6
-
S2A
13814
13
S2B
13
+
+
6
EGS EDS
8
-
-
5
RSLC1
51
ISCL
8
MMED
8
DBREAK
11
MWEAK
EBREAK
+
RSOURCE
RBREAK
17 18
IT
RVTHRES
17
18
7
50
RDRAIN
16
21
-
MSTRO
CIN
15
CB
14
+
5
8
-
LDRAIN
RLDRAIN
DBODY
LSOURCE
RLSOURCE
RVTEMP
19
VBAT
+
22
DRAIN
2
SOURCE
3
FDP8880 / FDB8880
res.rbreak n17 n18 = 1, tc1=8.0e- 4, tc 2=-8e-7
res.rdrain n50 n16 = 1.0e-3, tc 1=-12e-3,tc2= .35e-4
res.rgate n9 n20 = 2. 2
res.rslc1 n5 n51 = 1e-6, tc1=9e -4, tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsour ce n8 n7 = 6.8e-3, tc1= 5e-3,tc2=1e- 6
res.rvthres n22 n8 = 1, tc1=-1e- 3,tc2=-8.2e -6
res. r v temp n18 n19 = 1, tc 1=-2. 78e- 3,tc2= 1.5e- 6
sw_vcsp.s1 a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1 b n13 n12 n13 n8 = model = s1 bmod
sw_vcsp.s2 a n6 n15 n14 n13 = model = s2 amod
sw_vcsp.s2 b n13 n15 n14 n13 = model = s 2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5 ,n 51))))*((abs (v(n5,n51)* 1e6/170))** 5))}
}
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
1
9
www.fairchildsemicom
Page 10
FDP8880 / FDB8880
PSPICE Thermal Model
REV 23 December 2003
FDP8880T
CTHERM1 TH 6 8e-4
CTHERM2 6 5 1e-3
CTHERM3 5 4 2. 5e-3
CTHERM4 4 3 2. 6e-3
CTHERM5 3 2 8e-3
CTHERM6 2 TL 1.5e-2
RTHERM1 TH 6 1.44e-1
RTHERM2 6 5 1. 9e-1
RTHERM3 5 4 3. 0e-1
RTHERM4 4 3 4. 0e-1
RTHERM5 3 2 5. 7e-1
RTHERM6 2 TL 5.8e-1
SABER Thermal Model
SABER therm al m odel F DP8880T
template thermal_model th tl
thermal_ c th , tl
{
ctherm.c th erm 1 th 6 =8e-4
ctherm.ctherm2 6 5 =1e-3
ctherm.ctherm3 5 4 =2.5e-3
ctherm.ctherm4 4 3 =2.6e-3
ctherm.ctherm5 3 2 =8e-3
ctherm.ctherm6 2 tl =1.5e-2
rtherm.rth erm 1 th 6 =1.44e-1
rtherm.rtherm2 6 5 =1.9e-1
rtherm.rtherm3 5 4 =3.0e-1
rtherm.rtherm4 4 3 =4.0e-1
rtherm.rtherm5 3 2 =5.7e-1
rtherm.rtherm6 2 tl =5.8 e-1
}
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
JUNCTION
th
CTHERM1
6
CTHERM2
5
CTHERM3
4
CTHERM4
3
CTHERM5
RTHERM6
2
CTHERM6
tl
CASE
©2008 Fairchild Semiconductor Corporation
F
DP8880 / FDB8880 Rev. A
1
10
www.fairchildsemicom
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