Page 1
November 2005
FDP8878
N-Channel Logic Level PowerTrench® MOSFET
30V, 40A, 15mΩ
FDP8878 N-Channel PowerTrench
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(ON)
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Pulsed (Note 4) 141 A
Single Pulse Avalanche Energy (Note 1)
Power dissipation 40.5 W
Operating and Storage Temperature -55 to 175
= 25oC, VGS = 10V)
C
= 25oC, VGS = 4.5V) 36 A
C
SOURCE
DRAIN
GATE
= 25°C unless otherwise noted
A
Features
r
r
High performance trench technology for extremely low
Low gate charge
High power and current handling capability
RoHS Compliant
L = 1mH, I
L = 43µH,I
= 15mΩ, V
DS(ON)
= 19mΩ, V
DS(ON)
r
DS(ON)
= 11A 60
AS
= 32A 22
AS
= 10V, ID = 40A
GS
= 4.5V, ID = 36A
GS
G
D
D
40 A
mJ
o
®
MOSFET
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 2) 3.7
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 43
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8878 FDP8878 TO-220 Tube n/a 45 units
©2005 Fairchild Semiconductor Corporation
FDP8878 Rev. A
o
C/W
o
C/W
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FDP8878 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆BV
∆T
I
DSS
I
GSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
ID = 250µA,
Referenced to 25oC
21 mV/oC
VDS = 24V - - 1
VGS = 0V TA = 150oC - - 250
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
∆V
GS(TH)
∆T
J
r
DS(ON)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.7 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA,
Referenced to 25oC
-5 mV/oC
ID = 40A, VGS = 10V - 12 15
Drain to Source On Resistance
ID = 36A, VGS = 4.5V - 16 19
ID = 40, VGS = 10V,
TA = 175oC
- 20 25
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 188 250 pF
Reverse Transfer Capacitance - 1130 175 pF
VDS = 15V, VGS = 0V,
f = 1MHz
- 927 1235 pF
Gate Resistance f = 1MHz 3.0 Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 9.2 12 nC
Gate to Source Gate Charge - 2.6 - nC
VDD = 15V
ID = 40A
Ig = 1.0mA
- 17.1 23 nC
Gate Charge Threshold to Plateau - 1.7 - nC
Gate to Drain “Miller” Charge - 3.7 - nC
µA
mΩ
®
MOSFET
Switching Characteristics (V
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 11 .1 ns
Rise Time - 244 ns
Turn-Off Delay Time - 14.8 ns
Fall Time - 35.3 ns
Turn-Off Time - 50 75 ns
GS
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Notes:
1: Starting TJ = 25°C, VDD = 30V, VGS = 10V
2: R
θJA
drain pins. R
3: R
θJA
4: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP8878 Rev. A
Source to Drain Diode Voltage
Reverse Recovery Time ISD = 40A, dISD/dt=100A/µs - 14.4 18.8 ns
Reverse Recovered Charge ISD = 40A, dISD/dt=100A/µs - 5.1 6.7 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is measured with 1.0 in2 copper on FR-4 board
is guaranteed by design while R
θJC
θJA
= 10V)
VDD = 15V, ID = 40A
VGS = 10V, RGS = 16Ω
I
= 40A - 1.1 1.25 V
SD
ISD = 3.2A - 0.85 1.2 V
is determined by the user’s board design.
- 255 383 ns
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Page 3
FDP8878 N-Channel PowerTrench
Typical Characteristics T
80
70
60
50
40
30
, DRAIN TCURRENT (A)
D
I
20
10
0
00.8 2.0
10V
5.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.4
VDS, GATE TO SOURCE VOLTAGE (V)
= 25°C unless otherwise noted
A
4.5V
4.0V
3.5V
3.0V
1.2
1.6
, NORMALIZED
R
2.4
3.0V
2.2
2.0
1.8
1.6
1.4
DS(ON)
1.2
DRAIN TO SOURCE ON-RESISTANCE
1.0
0.8
0
3.5V
20
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4.0V
40
Figure 1. On Region Characteristics Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage
1.7
1.5
1.3
ID = 40A
VGS =10V
0.06
0.05
0.04
ID =40A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4.5V
5.0V
10V
60 80
®
MOSFET
NORMALIZED
1.1
DS(ON),
R
0.9
DRAIN TO SOURCE ON-RESISTANCE
0.7
- 80 40 160
0- 40 80 120 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On Resistance Variation with
Temperature
80
PULSE DURATION = 80µs
70
DUTY CYCLE = 0.5% MAX
60
VDS = 6V
50
40
30
, DRAIN TCURRENT (A)
D
I
20
10
0
1.0 2.0 5.0
TA = 175oC
TA = 25oC
TA = -55oC
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.03
, ON-RESISTANCE (OHM)
DS(ON)
0.03
R
TJ =25oC
0.01
428
VGS, GATE TO SOURCE VOLTAGE (V)
TJ =175oC
6
10
Figure 4. On-Resistance Variation with
Gate-to-Source Votlage
100
VGS = 0V
10
TA = 175oC
1.0
0.1
TA = 25oC
, REVERSE CURRENT (A)
S
0.01
I
4.0
0.001
00.6 1.50.9 1.20.3
VSD, BODY DIODE FORWARD VOLTAGE
TA = - 55oC
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
FDP8878 Rev. A
With Source Current and Temperature
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Page 4
Typical Characteristics T
= 25°C unless otherwise noted
A
FDP8878 N-Channel PowerTrench
10
VDD =15V
8
6
4
, GATE- SOURCE VOLTAGE
GS
2
V
0
401220
Qg, GATE CHARGE (nC)
WAVEFORMS IN
ASCENDING ORDER:
ID = 40A
ID = 1A
816
10000
1000
100
CAPACITANCE (pF)
10
0.1
C
ISS
C
OSS
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
500
100
10
, AVALANCHE CURRENT (A)
AS
I
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R
¼
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
STARTING TJ = 150oC
1
0.001
tAV, TIME IN AVALANCHE (ms)
0
0.01
0.1
- VDD)
DSS
- VDD) +1]
DSS
STARTING TJ = 25oC
1
10
100
1000
SINGLE PULSE
T
J
TC = 25oC
100
10
, DRAIN TCURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
1
0.1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
f = 1MHz
= 0V
V
GS
10
= MAX RATED
10µs
100µs
1ms
DC
30
®
MOSFET
100
Figure 9. Unclamped Inductive Switching
Capability
45
40
35
30
25
20
15
, DRAIN TCURRENT (A)
D
I
10
R
5
0
0 75 150
= 3.7oC/W
θJC
50
VDS, GATE TO SOURCE VOLTAGE (V)
VGS = 4.5V
100
VGS = 10V
125
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
FDP8878 Rev. A
175
Figure 10. Safe Operating Area
10000
1000
100
, PEAK TRANSIENT POWER (W)
(PK)
P
10
-5
-4
10
10
-3
10
t, PULSE WIDTH (s)
SINGLE PULSE
R
θJC
T
= 25oC
J
-2
10
= 0.5oC/W
-1
10
10
Figure 12. Single Pulse Maximum Power
Dissipation
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1
0
10
Page 5
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
-5
10
-4
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x R
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
-1
10
Figure 13. Transient Thermal Response Curve
FDP8878 N-Channel PowerTrench
P
DM
t
1
t
2
1/t2
+ T
θJC
C
0
10
1
10
®
MOSFET
FDP8878 Rev. A
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Page 6
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Definition of Terms
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Advance Information
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Rev. I17
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