Page 1
tm
FDP8860
s
N-Channel PowerTrench® MOSFET
30V, 80A, 2.5mΩ
Features
Max r
Max r
Low Miller Charge
Low Qrr Body Diode
UIL Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
= 2.5mΩ at VGS = 10V, ID = 80A
DS(on)
= 2.9mΩ at VGS = 4.5V, ID = 80A
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.
Application
DC - DC Conversion
Start / Alternator Sytems
D
September 2006
and fast
DS(on)
FDP8860 N-Channel PowerTrench
®
MOSFET
G
G
D
S
TO-220
FDP Serie
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8860 FDP8860 TO220AB Tube N/A 50 units
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 80
-Pulsed (Note 1) 556
Single Pulse Avalanche Energy (Note 2) 673 mJ
Power Dissipation 254 W
Operating and Storage Temperature -55 to +175 °C
Thermal Resistance, Junction to Case TO220 0.59
Thermal Resistance, Junction to Ambient TO220 62
= 25°C unless otherwise noted
C
= 25°C 219
C
A -Continuous (Silicon limited) T
°C/W
©2006 Fairchild Semiconductor Corporation
FDP8860 Rev.B
1
www.fairchildsemi.com
Page 2
FDP8860 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 1mA, referenced to 25°C 22 mV/°C
VDS = 24V, 1
V
= 0V TJ = 150°C 250
GS
Gate to Source Leakage Current VGS = ±20V ±100 nA
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.6 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 80A 3.4 S
ID = 250µA, referenced to 25°C -9.6 mV/°C
VGS = 10V, ID = 80A 1.9 2.5
VGS = 5V, ID = 80A 2.0 2.8
VGS = 4.5V, ID = 80A 2.1 2.9
VGS = 10V, ID = 80A, TJ = 150°C 2.9 3.8
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1700 2260 pF
Reverse Transfer Capacitance 1060 1590 pF
VDS = 15V, VGS = 0V,
f = 1MHz
9200 12240 pF
Gate Resistance f = 1MHz 1.7 Ω
µA
®
MOSFET
mΩ
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 135 216 ns
Turn-Off Delay Time 64 103 ns
Fall Time 59 95 ns
Total Gate Charge at 10V V
Total Gate Charge at 5V V
Gate to Source Gate Charge 27 nC
Gate to Drain “Miller” Charge 33 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Pulse Test: Pulse Width < 80µs, Duty cycle < 0.5%.
2: Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 74 111 nC
=25oC, L= 0.3mH, IAS = 67A,VDD = 27V, VGS = 10V.
J
VDD = 15V, ID = 80A
VGS = 5V, R
= 0V to 10V
GS
= 0V to 5V 81 11 4 nC
GS
V
= 0V, IS = 80A 0.88 1.25
GS
V
= 0V, IS = 40A 0.81 1.2
GS
GEN
= 3Ω
VDD = 15V
ID = 80A
IF = 80A, di/dt = 100A/µs
35 56 ns
158 222 nC
60 90 ns
V
FDP8860 Rev.B
2
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Page 3
FDP8860 N-Channel PowerTrench
Typical Characteristics T
320
VGS = 4V
240
160
80
, DRAIN CURRENT (A)
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS = 4.5V
VGS = 10V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics Figure 2.
1.7
ID = 80A
1.6
V
= 10V
GS
1.5
1.4
1.3
1.2
1.1
NORMALIZED
1.0
0.9
0.8
0.7
DRAIN TO SOURCE ON-RESISTANCE
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 4VVGS = 4V
VGS = 3.5V
VGS =3V
4
PULSE DURATION = 80µs
VGS = 3V
DUTY CYCLE = 0.5%MAX
3
VGS = 3.5V
V
= 4V
2
NORMALIZED
1
0
DRAIN TO SOURCE ON-RESISTANCE
0 80 160 240 320
ID, DRAIN CURRENT(A)
V
= 4.5V
GS
GS
V
= 10V
GS
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
10
(mΩ)
8
ID = 50A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
6
, DRAIN TO
DS(on)
r
4
TJ = 175oC
2
o
T
= 25
C
SOURCE ON-RESISTANCE
0
246810
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
O n - R es i s t a n c e vs G a t e t o
J
Source Voltage
®
MOSFET
, DRAIN CURRENT (A)
I
FDP8860 Rev.B
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 5V
120
D
DD
80
TJ = 175oC
TJ = 25oC
40
TJ = - 55oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
300
V
= 0V
GS
100
10
TJ = 175oC
1
TJ = 25oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.00.30.60.91.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDP8860 N-Channel PowerTrench
Typical Characteristics T
10
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
0 40 80 120 160
Qg, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics Figure 8.
200
100
10
TJ = 175oC
, AVALANCHE CURRENT(A)
AS
I
1
10-310-210-110010110210310
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
V
VDD = 18V
= 25°C unless otherwise noted
J
= 12V
DD
VDD = 15V
TJ = 25oC
4
20000
10000
C
CAPACITANCE (pF)
1000
500
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
C a p a c i t a n c e v s D r a i n
to Source Voltage
280
240
200
VGS=10V
160
120
VGS=4.5V
80
, DRAIN CURRENT (A)
D
I
40
R
= 0.59oC/W
θJC
0
25 50 75 100 125 150 175
Limited by Package
TC, CASE TEMPERATURE (oC)
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
f = 1MHz
V
= 0V
GS
iss
40
®
MOSFET
, DRAIN CURRENT (A)
I
FDP8860 Rev.B
2000
1000
10us
100
LIMITED BY
10
PACKAGE
1
OPERATION IN THIS
D
AREA MAY BE
LIMITED BY r
0.1
110
DS(on)
SINGLE PULSE
T
= MAX RATED
J
O
TC = 25
C
100us
1ms
10ms
DC
VDS, DRAIN-SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
5
10
VGS = 10V
4
10
3
10
), PEAK TRANSIENT POWER (W)
SINGLE PULSE
PK
2
P(
50
10
10-510-410-310-210-110010
Figure 12.
S i n g l e P u l s e M a x i m u m
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
t, PULSE WIDTH (s)
o
C DERATE PEAK
175 TC–
-----------------------
125
TC = 25oC
1
Power Dissipation
4
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Page 5
FDP8860 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
θJC
0.05
0.1
0.02
0.01
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
1E-3
-5
10
-4
10
= 25°C unless otherwise noted
J
SINGLE PULSE
-3
10
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
P
DM
t
1
t
2
1/t2
x R
+ T
θJC
θJC
C
0
10
1
10
®
MOSFET
FDP8860 Rev.B
5
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Page 6
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®
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®
FDP8860 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDP8860 Rev. B
Rev. I20
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