Datasheet FDP8447L Datasheet (Fairchild)

tm

FDP8447L

N-Channel PowerTrench® MOSFET

40V, 50A, 8.7mΩ

Features

 Max r  Max r  Fast Switching  RoHS Compliant

= 8.7mΩ at VGS = 10V, ID = 14A

DS(on)

= 11.2mΩ at VGS = 4.5V, ID = 11A

DS(on)

General Description

This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low

r

and optimized BV

DS(on)

performance benefit in the application.

Applications

 Inverter  Power Supplies

May 2007

capability to offer superior

DSS

D

FDP8447L N-Channel PowerTrench

®

MOSFET

G

D

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25°C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100 Drain-Source Avalanche Energy (Note 3) 153 mJ Power Dissipation TC = 25°C 60 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

TO-220

FDP Series

= 25°C 65

C

= 25°C (Note 1) 12

A

= 25°C (Note 1) 2

A

G

S

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 2.1 Thermal Resistance, Junction to Ambient (Note 1) 62.5

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDP8447L FDP8447L TO-220AB Tube N/A 50units

1

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FDP8447L N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V Breakdown Voltage Temperature

Coefficient

ID = 250µA, referenced to 25°C 34 mV/°C

Zero Gate Voltage Drain Current VDS = 32V, 1 µA Gate to Source Leakage Current VGS = ±20V, V

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.7 3 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5V, ID = 14A 74 S

ID = 250µA, referenced to 25°C -6 mV/°C VGS = 10V, ID = 14A 7.7 8.7

VGS = 10V, ID = 14A, TJ = 125°C 12.1 13.7

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance 245 325 pF Reverse Transfer Capacitance 150 225 pF

VDS = 20V, VGS = 0V, f = 1MHz

1880 2500 pF

Gate Resistance f = 1MHz 1.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 7 14 ns Turn-Off Delay Time 28 45 ns

VDD = 20V, ID = 14A, VGS = 10V, R

GEN

= 6Ω

9 18 ns

Fall Time 4 10 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 4.7 nC

= 0V to 10V

GS

= 0V to 5V 19 27 nC

GS

VDD = 20V, ID = 14A

35 49 nC

Gate to Drain “Miller” Charge 6.2 nC

mΩVGS = 4.5V, ID = 11A 8.9 11.2

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case -to- ambient thermal resistance where the case thermal reference is defined as the s olde r m ount i ng sur f ace o f the dr a in pi n s .

θJA

is guaranteed by design while R

R

θJC

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 22 33 nC

is determined by the user’s board design.

θJA

= 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, V

J

GS

= 10V.

= 0V, IS = 14A (Note 2) 0.8 1.2 V

GS

IF = 14A, di/dt = 100A/µs

2

28 42 ns

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FDP8447L N-Channel PowerTrench

Typical Characteristics T

100

80

60

40

, DRAIN CURRENT (A)

20

D

I

0

01234

Figure 1.

1.8

ID = 14A V

= 10V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

Figure 3 . N o r m a l i z e d O n - R e s is tance

vs Junction Temperature

VGS = 10V VGS = 4.5V VGS = 4V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

T

, JUNCTION TEMPERATURE (

J

= 25°C unless otherwise noted

J

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

VGS = 3.5V

VGS = 3V

o

C)

3.0

VGS = 3V

2.5

VGS = 3.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 020406080100

I

D

VGS = 4V

V

= 4.5V

GS

, DRAIN CURRENT(A)

V

= 10V

GS

Normali z e d O n - R e s istance

vs Drain Current and Gate Voltage

20

ID = 7A

16

(mΩ)

12

, DRAIN TO

DS(on)

8

r

SOURCE ON-RESISTANCE

4

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4.

On-Res istance vs Gate t o

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

Source Voltage

®

MOSFET

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

80

V

= 5V

DS

60

40

, DRAIN CURRENT (A)

20

D

I

0

1234

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 125oC

Figure 5. Transfer Characteristics

TJ = 25oC

TJ = -55oC

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6.

TJ = 125oC

TJ = 25oC

TJ = -55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

3

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FDP8447L N-Channel PowerTrench

Typical Characteristics T

10

ID = 14A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

V

0

0 10203040

Figure 7.

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

20

10

, AVALANCHE CURRENT(A)

AS

I

1

0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE(ms)

Figure 9.

Unc l a mp e d In d u c ti v e

Switching Capability

VDD = 20V

TJ = 125oC

V

DD

= 25°C unless otherwise noted

J

= 10V

VDD = 30V

TJ = 25oC

300

10000

C

iss

1000

C

oss

C

100

CAPACITANCE (pF)

f = 1MHz

= 0V

V

GS

10

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

Cap a c i t ance v s D r ain

to Source Voltage

80

60

V

= 10V

GS

40

Limited by Package

, DRAIN CURRENT (A)

20

D

I

R

= 2.1oC/W

θJC

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (

C

Figure 10.

Ma ximum Co ntin uous Dra in

V

= 4.5V

GS

o

Current vs Case Temperature

40

®

MOSFET

C)

300

100

10

, DRAIN CURRENT (A) I

THIS AREA IS LIMITED BY r

1

D

0.1

0.1 1 10 100

DS(on)

SINGLE PULSE

= MAX RATED

T

J

o

= 2.1

R

θJC

o

T

= 25

C

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

C/W

1000

VGS = 10V

100us

SINGLE PULSE

o

= 2.1

θJC

= 25

C

C/W

o

C

R T

1ms 10ms 100ms

100

), PEAK TRANSIENT POWER (W)

PK

P(

50

10

-4

-3

10

Figure 12.

-2

10

t, PULSE WIDTH (s)

-1

10

0

10

1

10

Single Puls e Ma xim um

Power Dissipation

4

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FDP8447L N-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE-DESCENDING ORDER

1

θJC

Z

IMPEDANCE,

NORMALIZED THERMAL

0.1

0.05

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE R

θJC

-4

10

-3

10

= 25°C unless otherwise noted

J

= 2.1oC/W

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

θJC

C

0

10

1

10

®

MOSFET

5

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FDP8447L N-Channel PowerTrench

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perfor m when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification

Advance Information

Product Status Formative or In Design

Preliminary First Production This datasheet contains preliminary data; supplementary data will

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete

Not In Production

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Definition

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.

Rev. I27

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