Page 1
tm
FDP8441
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7mΩ
FDP8441 N-Channel PowerTrench
September 2006
Features
Typ r
Typ Q
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
A
E
L
= 2.1mΩ at VGS = 10V, ID = 80A
DS(on)
= 215nC at V
g(10)
E
E
R
F
I
D
M
P
L
E
M
E
N
T
A
T
I
O
N
GS
= 10V
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDP8441 Rev.A
www.fairchildsemi.com1
Page 2
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current Continuous (TC < 160oC, V
= 25oC, V
amb
= 10V, with R
GS
= 10V) 80
GS
= 62oC/W) 23
θJA
Pulsed See Figure 4
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 1) 947 mJ
Power dissipation 300 W
o
Derate above 25
C2W/
Operating and Storage Temperature -55 to 175
Thermal Characteristics
FDP8441 N-Channel PowerTrench
AContinuous (T
o
C
o
C
R
θJC
R
θJA
Thermal Resistance Junction to Case 0.5
Thermal Resistance Junction to Ambient (Note 2) 62
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8441 FDP8441 TO-220AB Tube N/A 50 units
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
r
on)
DS(
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 2 2.8 4 V
Drain to Source On Resistance
= 25°C unless otherwise noted
J
VDS = 32V
V
= 0V
GS
ID = 80A, VGS = 10V - 2.1 2.7
ID = 80A, VGS = 10V,
TJ = 175°C
- - 1
TJ = 150°C - - 250
- 3.6 4.7
o
o
C/W
C/W
µA
mΩ
®
MOSFET
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
FDP8441 Rev.A www.fairchildsemi.com2
Input Capacitance
Output Capacitance - 1250 - pF
Reverse Transfer Capacitance - 685 - pF
VDS = 25V, VGS = 0V,
f = 1MHz
Gate Resistance VGS = 0.5V, f = 1MHz - 1.1 - Ω
Total Gate Charge at 10V VGS = 0 to 10V
Threshold Gate Charge VGS = 0 to 2V - 29 38 nC
Gate to Source Gate Charge
Gate Charge Threshold to Plateau - 32 - nC
Gate to Drain “Miller” Charge - 49 - nC
VDD = 20V
ID = 35A
Ig = 1mA
- 15000 - pF
- 215 280 nC
- 60 - nC
Page 3
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Switching Characteristics
FDP8441 N-Channel PowerTrench
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time - 23 - ns
Turn-On Rise Time - 24 - ns
Turn-Off Delay Time - 75 - ns
Turn-Off Fall Time - 17.9 - ns
Turn-Off Time - - 147 ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A.
2: Pulse width = 100s.
Source to Drain Diode Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs-52 68 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs-76 99 nC
--77ns
V
= 20V, ID = 35A
DD
V
= 10V, RGS = 1.5Ω
GS
I
= 35A - 0.8 1.25 V
SD
= 15A - 0.8 1.0 V
I
SD
®
MOSFET
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
FDP8441 Rev.A www.fairchildsemi.com3
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
certification.
Page 4
Typical Characteristics
FDP8441 N-Channel PowerTrench
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULIPLIER
0.0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
θJC
0.05
0.1
0.02
0.01
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
SINGLE PULSE
1E-3
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION(s)
300
CURRENT LIMITED
250
BY PACKAGE
200
150
100
, DRAIN CURRENT (A)
D
I
50
0
25 50 75 100 125 150 175
Figure 2.
TC, CASE TEMPERATURE(oC)
Maximum Continuous Drain Current vs
Case Temperature
P
DM
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
1/t2
x R
10
VGS = 10V
®
MOSFET
t
1
t
2
+ T
θJC
C
0
1
10
Figure 3.
Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
100
, PEAK CURRENT (A)
DM
I
SINGLE PULSE
10
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDP8441 Rev.A www.fairchildsemi.com4
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-2
10
-1
10
I = I
25
o
C DERATE PEAK
175 - T
150
0
10
C
1
10
Page 5
Typical Characteristics
FDP8441 N-Channel PowerTrench
4000
1000
100
10
, DRAIN CURRENT (A)
D
I
0.1
LIMITED
BY PACKAGE
1
OPERATION IN THIS
AREA MAY B E
LIMITED BY r
DS(on)
SINGLE PULSE
T
= MAX RATED
J
o
T
= 25
C
C
110100
10us
100us
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5.
160
120
, DRAIN CURRENT (A)
D
I
Forward Bias Safe Operating Area
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 5V
V
DD
80
40
0
2.02.53.03.54.04.55.0
TJ = 175oC
TJ = 25oC
TJ = -55oC
VGS, GATE TO SOURCE VOLTAGE (V)
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R
≠
0
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
100
- VDD)
DSS
- VDD) +1]
DSS
STARTING TJ = 25oC
10
STARTING TJ = 150oC
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 1000
5000
tAV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching
Capability
160
120
80
40
, DRAIN CURRENT (A)
D
I
0
01234
V
= 10V
GS
V
= 5V
GS
V
= 4.5V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 4V
GS
V
= 3.5V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
®
MOSFET
Figure 7.
50
Transfer Characteristics Figure 8.
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
(mΩ)
30
TJ = 25oC
TJ = 175oC
20
, DRAIN TO SOURCE
ON-RESISTANCE
10
DS(on)
r
0
345678910
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 9.
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDP8441 Rev.A www.fairchildsemi.com5
Saturation Characteristics
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
ID = 80A
V
= 10V
GS
Page 6
Typical Characteristics
FDP8441 N-Channel PowerTrench
1.2
1.0
0.8
0.6
NORMALIZED GATE
THRESHOLD VOLTAGE
0.4
-80 -40 0 40 80 120 160 200
Figure 11.
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs
Junction Temperature
40000
10000
1000
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
V
= V
GS
I
= 250µA
D
C
iss
C
oss
1.15
I
= 250µA
DS
D
1.10
1.05
1.00
0.95
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
0.90
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
®
MOSFET
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
ID = 80A
8
6
VDD = 20V
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
50
0 50 100 150 200 250
VDD = 15V
Q
, GATE CHARGE(nC)
g
VDD = 25V
Figure 13.
Capacitance vs Drain to Source
Voltage
FDP8441 Rev.A www.fairchildsemi.com6
Figure 14.
Gate Charge vs Gate to Source Voltage
Page 7
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
UniFET™
UltraFET
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®
FDP8441 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDP8441 Rev.A
Rev. I20
www.fairchildsemi.com7
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