Page 1
tm
FDP8440
N-Channel PowerTrench
40V, 277A, 2.2mΩ
®
MOSFET
FDP8440 N-Channel PowerTrench
January 2009
Features
•R
•Q
• Low Miller Charge
•Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
•RoHS Compliant
MOSFET Maximum Ratings
= 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A
DS(on)
= 345nC (Typ.)@ VGS = 10V
g(tot)
Body Diode
RR
G D S
TO-220
FDP Series
TC = 25oC unless otherwise noted
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
D
G
S
®
MOSFET
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
T
J, TSTG
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
D r a i n C u rr e n t
Drain Current - Pulsed (Note 1) 500 A
Single Pulsed Avalanche Energy (Note 2) 1682 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Continuous (T
- Continuous (T
- Continuous (T
(T
= 25oC) 306 W
C
- Derate above 25
= 25oC, Silicon Limited)
C
= 100oC, Silicon Limited)
C
= 25oC, Package Limited)
C
o
C2.04W/
277*
196*
100
300
A
o
o
o
C
C
C
Thermal Characteristics
R
θJC
R
θCS
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP8440 Rev. A6
Thermal Resistance, Junction to Case 0.49
Thermal Resistance, Case to Sink (Typ.) 0.5
Thermal Resistance, Junction to Ambient 62.5
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8440 FDP8440 TO-220 N/A N/A 50units
FDP8440 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(tot)
Q
g(2)
Q
gs
Q
gs2
Q
gd
Switching Characteristics
t
ON
t
d(on)
t
r
t
d(off)
t
f
t
OFF
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
RR
Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA40----V
Zero Gate Voltage Drain Current
VDS = 32V
= 0 V
V
GS
T
= 150oC -- -- 250 μA
C
-- -- 1 μA
Gate to Body Leakage Current VGS = ±20V -- -- ±100 nA
Gate to Source Threshold Voltage VDS = VGS, ID = 250μA1--3V
= 4.5V, ID = 80A -- 1.88 2.4
V
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance -- 1840 2450 pF
GS
= 10V, ID = 80A -- 1.64 2.2
V
GS
= 10V, ID = 80A,
V
GS
T
= 175oC
C
-- 3.00 4.4
-- 18600 24740 pF
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
mΩ
Reverse Transfer Capacitance -- 1400 2100 pF
Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω
Total Gate Charge at 10V VGS = 0V to 10V
= 20V
Threshold Gate Charge VGS = 0V to 2V -- 32.5 -- nC
Gate to Source Gate Charge -- 49 -- nC
Gate Charge Threshold to Plateau -- 16.5 -- nC
V
DD
= 80A
I
D
= 1.0mA
I
g
-- 345 450 nC
Gate to Drain “Miller” Charge -- 74 -- nC
(V
= 10V)
GS
Turn-On Time
Turn-On Delay Time -- 43 95 ns
Rise Time -- 130 275 ns
= 20V,ID = 80A
V
DD
V
= 10V, R
GS
GEN
= 7Ω
-- 175 360 ns
Turn-Off Delay Time -- 435 875 ns
Fall Time -- 290 590 ns
Turn-Off Time -- 730 1470 ns
I
= 80A -- -- 1.25 V
Source to Drain Diode Voltage
SD
= 40A -- -- 1.0 V
I
SD
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs--59--ns
Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs--77--nC
®
MOSFET
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V.
FDP8440 Rev. A6
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
FDP8440 N-Channel PowerTrench
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
400
100
10
,Drain Current[A]
D
I
1
0.4
0.04
0.1 1
VDS,Drain-Source Voltage[V]
* Notes :
1. 250
2. T
C
V
= 10.0 V
GS
7.0 V
5.0 V
3.5 V
3.0 V
2.5 V
μs Pulse Test
= 25oC
400
100
150oC
10
,Drain Current[A]
D
I
1
0246
VGS,Gate-Source Voltage[V]
-55oC
25oC
* Notes :
1. V
DS
2. 250
= 20V
μs Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
1.80
1.76
VGS = 4.5V
[mΩ],
DS(ON)
R
1.72
VGS = 10V
Drain-Source On-Resistance
* Note : TJ = 25oC
1.68
0 50 100 150 200 250
ID, Drain Current [A]
1000
100
150oC
25oC
10
, Reverse Drain Current [A]
S
I
1
0.3 0.6 0.9 1.2
Notes:
1. V
GS
2. 250
= 0V
μs Pulse Test
VSD, Body Diode Forward Voltage [V]
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
30000
24000
18000
12000
Capacitances [pF]
6000
FDP8440 Rev. A6
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
C
iss
= C
gd
gd
10
VDS = 25V
V
8
DS
V
DS
= 20V
= 15V
6
* Note:
1. V
C
oss
C
rss
0
-1
10
0
10
= 0V
GS
2. f = 1MHz
1
10
VDS, Drain-Source Voltage [V]
4
, Gate-Source Voltage [V]
GS
V
2
0
20
0 100 200 300 400
Qg, Total Gate Charge [nC]
* Note : ID = 80A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
2.5
FDP8440 N-Channel PowerTrench
1.1
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
* Notes :
1. V
2. I
= 0V
GS
= 250μA
D
, [Normalized]
DS(on)
r
TJ, Junction Temperature [oC]
Figure 9. Unclamped Inductive Switching
Capability
200
100
TJ = 25oC
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100 1000 10000
TJ = 150oC
tAV, TIME IN AVALANCHE(ms)
2.0
1.5
1.0
0.5
Drain-Source On-Resistance
0.0
-100 -50 0 50 100 150 200
* Notes :
1. V
2. I
D
TJ, Junction Temperature [oC]
Figure 10. Safe Operating Area
3000
1000
100μs
100
10
Operation in This Area
, Drain Current [A]
is Limited by R
D
I
1
0.1
110
DS(on)
*Notes:
= 25oC
1. T
C
2. T
= 175oC
J
3. Single Pulse
VDS, Drain-Source Voltage [V]
1ms
10ms
100ms
= 10V
GS
= 80A
®
MOSFET
FDP8440 Rev. A6
]
θJC
Thermal Response [Z
0.001
0.1
0.01
Figure 11. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
-5
10
-4
10
-3
10
* Notes :
1. Z
2. Duty Factor, D=t
3. TJM - TC = PDM * Z
-2
10
Rectangular Pulse Duration [sec]
4 www.fairchildsemi.com
P
DM
t
1
t
2
(t) = 0.49oC/W Max.
θJC
-1
10
1/t2
θJC
(t)
0
10
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDP8440 N-Channel PowerTrench
®
MOSFET
FDP8440 Rev. A6
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP8440 N-Channel PowerTrench
®
MOSFET
FDP8440 Rev. A6
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FDP8440 N-Channel PowerTrench
TO-220
®
MOSFET
FDP8440 Rev. A6
7 www.fairchildsemi.com
Page 8
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tm
®
tm
tm
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intended to be an exhaustive list of all such trademarks.
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THEREIN, WHICH COVERS THESE PRODUCTS.
FDP8440 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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www.fairchildsemi.com, under Sales Support
.
2. A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDP8440 Rev. A6
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
8 www.fairchildsemi.com
Rev. I37
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