Datasheet FDP6N60ZU, FDPF6N60ZUT Datasheet (Fairchild)

FDP6N60ZU / FDPF6N60ZUT

TO-220F
FDPF Series

G

S

D

TO-220
FDP Series

G

S

D

G

S

D

G

S

D

N-Channel MOSFET, FRFET

600V, 4.5A, 2Ω

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

April 2012

TM

UniFE

Features

•R

• Low gate charge ( Typ. 14.5nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A

DS(on)

( Typ. 5pF)

rss

o

= 25

C unless otherwise noted*

C

Symbol Parameter FDP6N60ZU FDPF6N60ZUT Units

Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 105 33.8 W

C

- Derate above 25

STG

Drain Current
Drain Current - Pulsed (Note 1) 18 18* A

Single Pulsed Avalanche Energy (Note 2) 150 mJ
Avalanche Current (Note 1) 4.5 A
Repetitive Avalanche Energy (Note 1) 10.5 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

= 25oC) 4.5 4.5*

C

= 100oC) 2.7 2.7*

C

o

C0.850.27W/

300

Thermal Characteristics

Symbol Parameter

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 1.2 3.7
Thermal Resistance, Case to Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

FDP6N60ZU FDPF6N60ZUT

A

o

o

C

o

C

Units

o

C/WR

C

©2012 Fairchild Semiconductor Corporation
FDP6N60ZU / FDPF6N60ZUT Rev. C0

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP6N60ZU FDP6N60ZU TO-220 - - 50

FDPF6N60ZUT FDPF6N60ZUT TO-220F - - 50

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC - 0.75 - V/oC

D

V

= 600V, V

DS

= 480V, TC = 125oC - - 250

V

DS

= 0V - - 25

GS

= 0V - - ±10 μA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.7 2.0 Ω
Forward Transconductance VDS = 40V, ID = 2.25A - 3.5 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 75 100 pF
Reverse Transfer Capacitance - 5 10 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 4 - nC

Gate to Drain “Miller” Charge - 6 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 25 60 ns
Turn-Off Delay Time - 25 60 ns
Turn-Off Fall Time - 45 100 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 480V, ID = 4.5A

DS

V

= 10V

GS

(Note 4)

= 300V, ID = 4.5A

V

DD

R

= 25Ω, VGS = 10V

G

(Note 4)

- 650 865 pF

- 14.5 20 nC

-1948ns

μA

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 15mH, I
3: I

≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4: Essentially Independent of Operating Temperature Typical Characteristics

FDP6N60ZU / FDPF6N60ZUT Rev. C0

Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 18 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 37 - nC

= 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 4.5A - - 1.6 V

SD

= 4.5A

SD

2

-36-ns

www.fairchildsemi.com

Typical Performance Characteristics

2468

0.1

1

10

20

25oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

VGS,Gate-Source Voltage[V]

I

D

,Drain Current[A]

0.1 1 10 20

0.1

1

10

20

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

036912

1.5

1.8

2.1

2.4

2.7

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0123

1

10

100

200

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 30

0

500

1000

1500

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Volta ge [V ]

0 5 10 15

0

2

4

6

8

10

*Note: ID = 4.5A

VDS = 150V
V

DS

= 300V

V

DS

= 480V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te C harge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP6N60ZU / FDPF6N60ZUT Rev. C0

3

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.88

0.92

0.96

1.00

1.04

1.08

1.12

1.16

*Notes:

1. V

GS

= 0V

2. I

D

= 250μA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

1 10 100 1000

0.01

0.1

1

10

30

20μs

100μs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. T

C

= 25oC

2. T

J

= 150oC

3. Single P u ls e

DC

25 50 75 100 125 150

0

2

4

6

I

D

, Drain Current [A]

TC, Case Temperatu re [oC]

Limited by package

10

-5

10

-4

10

-3

10

-2

10

-1

11010

2

0.01

0.1

1

5

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 3.7oC/W Max.

2. Duty Factor, D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area
vs. Temperature - FDPF6N60ZUT

Figure 9. Maximum Drain Current
vs. Case Temperature

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT

FDP6N60ZU / FDPF6N60ZUT Rev. C0

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

FDP6N60ZU / FDPF6N60ZUT Rev. C0

5

www.fairchildsemi.com

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDP6N60ZU / FDPF6N60ZUT Rev. C0

6

www.fairchildsemi.com

Mechanical Dimensions

TO-220

4.50

±0.20

9.90

±0.20

1.52

±0.10

0.80

±0.10

2.40

±0.20

1.27

±0.10

ø3.60

±0.10

(8.70)

2.80

±0.10

15.90

±0.20

10.08

±0.30

18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20

±0.20

13.08

±0.20

1.30

±0.10

1.30

+0.10
–0.05

0.50

+0.10
–0.05

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

FDP6N60ZU / FDPF6N60ZUT Rev. C0

7

www.fairchildsemi.com

Package Dimensions

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

FDP6N60ZU / FDPF6N60ZUT Rev. C0

Dimensions in Millimeters

8

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FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDP6N60ZU / FDPF6N60ZUT Rev. C0 www.fairchildsemi.com

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

9

Rev. I61