Datasheet FDP6676, FDB6676 Datasheet (Fairchild Semiconductor)

FDP6676/FDB6676

30V N-Channel Logic Level PowerTrench



MOSFET

FDP6676/FDB6676

April 2001

General Description

This N-Channel MOSFET has been designed specifically to i mprove the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM c ontrollers. It has been optimized for “low side” synchronous rectifier operat ion, providing an extremely low R

DS(ON)

.

Applications

• Synchronous rectifier

• DC/DC converter

.

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

o

=25

C unless otherwise noted

A

Features

• 42 A, 30 V. R R

• Critical DC electric al parameters specified at elevated temperature

• High performance trench te chnology for extremely low R

• 175°C maximum junct i on temperature rating

DS(ON)

D

= 6.0 mΩ @ VGS = 10 V

DS(ON)

= 7.5 mΩ @ VGS = 4.5 V

DS(ON)

G

D

TO-263AB

FDB Series

S

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1) 84 A – Pulsed (Note 1) 240

PD

TJ, T

STG

Total Power Dissipation @ T Derate above 25°C

Operating and Storage Junction Temperature Range -65 to +175

= 25°C

C

± 16

93 W

0.48

V

W°C

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

1.6

62.5

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDP6676 FDP6676 Tube n/a 45 FDB6676 FDB6676 13” 24mm 800 units

2000 Fairchild Semiconductor Corporation

FDP6676/FDB6676 Rev C(W)

°C/W °C/W

FDP6676/FDB6676

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1)

W

IAR

DSS

Single Pulse Drain-Source Avalanche Energy

Maximum Drain-Source Avalanche Current

= 15 V, ID = 20 A

V

DD

370 mJ

20 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

30 V

24

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V 60 A

D(on)

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 42 A

= 4.5 V, ID = 39 A

V

GS

=10V, ID = 42 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 42 A 141 S

1 1.5 3 V

–4.5

4.3

4.9

7.0

6

7.5 11

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 5324 pF

iss

C

Output Capacitance 841 pF

oss

C

Reverse Transfer Capacitance

rss

= 15 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

384 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 15 27 ns

d(on)

tr Turn–On Rise Time 10 20 ns t

Turn–Off Delay Time 93 149 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 43 60 nC Qgs Gate–Source Charge 13 nC Qgd Gate–Drain Charge

= 15 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

= 15 V, ID = 42 A,

V

DS

V

= 5 V

GS

GEN

= 6 Ω

37 59 ns

11 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Cont i nuous Drain–Source Diode Forward Current 84 A VSD Drain–Source Diode Forward

Voltage

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.

3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A

VGS = 0 V, IS = 42 A 0.9 1.3 V

FDP6676/FDB6676 Rev. C( W)

)

E

)

A

Typical Characteristics

FDP6676/FDB6676

150

VGS = 10V

4.5V

120

90

60

, DRAIN CURRENT (A

D

I

30

0

01234

3.5V

3.0V

, DRAIN-SOURCE VOL TAGE ( V )

V

DS

2.5V

1.8

1.6 VGS = 3.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANC

0.8

0 30 60 90 120 150

3.5V

4.0V

, DRAIN CURRENT (A)

I

D

4.5V

6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.9 ID =42 A

1.7

= 10V

V

GS

1.5

1.3

1.1

, NORMALIZED

DS(ON)

0.9

R

0.7

DRAIN-SOURCE ON-RESISTANCE

0.5

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

T

J

0.017

0.014

0.011 TA = 125oC

0.008

, ON-RESISTANCE (OHM)

0.005

DS(ON)

R

TA = 25oC

0.002

2345678910

, GATE TO SOURCE VOLTAGE (V)

V

GS

10V

ID = 21 A

Figure 3. On-Resistance Variation with

Temperature.

90

VDS = 5V

75

60

45

30

, DRAIN CURRENT (A

D

I

15

0

11.522.533.5

TA = 125oC

25oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

T

= 125oC

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP6676/FDB6676 Rev. C( W)

)

Typical Characteristics

FDP6676/FDB6676

10

ID = 42 A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 102030405060708090

Q

, GATE CHARGE (nC)

g

VDS = 5V

15V

10V

7000

6000

5000

4000

3000

2000

CAPACITANCE (pF

1000

0

0 6 12 18 24 30

C

ISS

C

OSS

C

RSS

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

R

LIMIT

DS(ON)

100

DC

10

, DRAIN CURRENT (A)

D

I

VGS = 10V

SINGLE PULSE

R

= 1.6oC/W

θJC

T

= 25oC

C

1

0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1s

10s

100ms

1000

SINGLE PULSE

R

= 1.6°C/W

θ

800

600

400

200

P(pk), PEAK TRANSIENT POWER (W

0

1 10 100 1000

t

, TIME (sec)

1

JC

T

C

= 25°C

f = 1MHz

= 0 V

V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

R

(t) = r(t) + R

θ

JC

R

= 1.6 °C/W

θ

JC

P(pk

t

1

t

2

T

- TC = P * R

J

Duty Cycle, D = t

θ

JC

(t)

θ

JC

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDP6676/FDB6676 Rev. C( W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOL T™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

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

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

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

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H1