Datasheet FDP6644 Datasheet (Fairchild)

FDP6644/FDB6644

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FDP6644/FDB6644

30V N-Channel PowerTrench MOSFET

June 2001

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS

specifications.

(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

G

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

=25oC unless otherwise noted

A

Features

• 50 A, 30 V. R

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• 175°C maximum junction temperature rating

D

= 8.5 mΩ @ VGS = 10 V

DS(ON)

R

= 10.5 mΩ @ VGS = 4.5 V

DS(ON)

G

D

TO-263AB

FDB Series

S

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1) 50 A

– Pulsed (Note 1) 150 A

Total Power Dissipation @ TC = 25°C 83 W

Derate above 25°C 0.55 W/°C

Operating and Storage Junction Temperature Range -65 to +175 °C

± 16

V

Thermal Characteristics

R

θJC Thermal Resistance, Junction-to-Case 1.8 °C/W

R

θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB6644 FDB6644 13’’ 24mm 800 units
FDP6644 FDP6644 Tube n/a 45

2001 Fairchild Semiconductor Corporation

FDP6644 Rev C(W)

Electrical Characteristics T

FDP6644/FDB6644

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy

Maximum Drain-Source Avalanche
Current

VDD = 15 V, ID = 25 A

240

25 A

mJ

Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temperature

Coefficient

J

ID = 250 µA, Referenced to 25°C 26 mV/°C

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 NA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 NA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 25A
VGS = 4.5 V, ID = 25 A
VGS= 10 V, ID = 25 A, TJ=125°C

1 1.5 3 V

–5 mV/°C

6.4

7.3

9.3

On–State Drain Current VGS = 10 V, VDS = 5 V 60 A
Forward Transconductance VDS = 5 V, ID = 25 A 98 S

8.5

10.5
15

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 3068 pF
Output Capacitance 513 pF
Reverse Transfer Capacitance

VDS = 15 V, V
f = 1.0 MHz

GS

= 0 V,

196 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 12.5 22.5 ns
Turn–On Rise Time 8 16 ns

VDD = 15 V, ID = 1 A,
VGS = 10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 54 86 ns
Turn–Off Fall Time
Total Gate Charge 27 38 nC
Gate–Source Charge 9 nC

VDS = 15 V, ID = 25 A,
VGS = 4.5 V

Gate–Drain Charge

14 26 ns

7 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain–Source Diode Forward Current 50 A
Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = 25 A (Note 2) 0.8 1.3 V

FDP6644 Rev C(W)

Typical Characteristics

I

D

, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

6.0V

10V

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

, DRAIN CURRENT (A)

I

S

, REVERSE DRAIN CURRENT (A)

FDP6644/FDB6644

50

VGS = 10V

40

30

20

10

0

0 0.5 1 1.5

4.5V

6.0V

3.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

2.5V

2

1.8

VGS = 3.0V

1.6

1.4

1.2

R

1

0.8
0 10 20 30 40 50

3.5V

4.0V

4.5V

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2

ID =25A

1.8

VGS = 10V

1.4

1

R

0.6

0.2

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

0.02

0.016

TA = 125oC

0.012

0.008

TA = 25oC

0.004
2 4 6 8 10

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 12A

Figure 3. On-Resistance Variation with

Temperature.

80

VDS = 5V

60

40

20

0

1 1.5 2 2.5 3 3.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP6644 Rev C(W)

Typical Characteristics

V

, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)

I

D

, DRAIN CURRENT (A)

1s

P(pk), PEAK TRANSIENT POWER (W)

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

P(pk)

0.05

FDP6644/FDB6644

10

ID = 25A

8

6

4

2

GS

0

0 10 20 30 40 50

Qg, GATE CHARGE (nC)

VDS = 5V

15V

10V

4200

3500

2800

2100

1400

700

C

0

0 5 10 15 20 25 30

C

ISS

C

OSS

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

R

100

10

LIMIT

DS(ON)

DC

VGS = 10V

SINGLE PULSE

R

= 1.8oC/W

θ

JC

TC = 25oC

1

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10ms

100ms

1ms

100us

1000

800

600

400

200

0

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

SINGLE PULSE

R

θ

JC

TC = 25°C

f = 1MHz
VGS = 0 V

= 1.8°C/W

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

R

(t) = r(t) + R

θ

JC

R

= 1.8 °C/W

θJC

t

1

t

2

TJ - TC = P * R

Duty Cycle, D = t1 / t

0.1

D = 0.5

0.2

0.1

0.02

0.01

SINGLE PULSE

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.

FDP6644 Rev C(W)

θ

JC

(t)

θJC

2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™



OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER



SMART ST ART™

ST AR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H3