Datasheet FDP65N06 Datasheet (Fairchild)

FDP65N06

60V N-Channel MOSFET

FDP65N06 60V N-Channel MOSFET

June 2006

TM

UniFET

Features

• 65A, 60V, R

• Low gate charge ( typical 132nC)

• Low Crss ( typical 35pF)

•Fast switching

• Improved dv/dt capability

= 0.016Ω @VGS = 10 V

DS(on)

G

D

S

TO-220

FDP Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDP65N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

, T

T

J

STG

T

L

Drain-Source Voltage 60 V Drain Current - Continuous (TC = 25°C) 65 A

- Continuous (T Drain Current - Pulsed Gate-Source Voltage ± 20 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 135 W

- Derate above 25°C 1.08 W/°C Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 41 A

C

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

260 A

430 mJ

65 A

13.5 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FDP65N06 Units

R

θJC

R

θJA

FDP65N06 Rev. A1

Thermal Resistance, Junction-to-Case 0.92 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP65N06 FDP65N06 TO-220 -- -- 50

FDP65N06 60V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV ∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics C

iss

C

oss

C

rss

Switching Characteristics t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 47µH, IAS =65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 65A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60----V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA

= 48 V, TC = 125°C -- -- 10 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V Static Drain-Source On-Resistance VGS = 10 V, ID = 32.5 A -- 0.013 0.016 Ω Forward Transconductance VDS = 40 V, ID = 32.5 A (Note 4) -- 39 -- S

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance -- 464 600 pF

f = 1.0 MHz

-- 1670 2170 pF

Reverse Transfer Capacitance -- 35 52 pF

Turn-On Delay Time VDD = 30 V, ID = 65A,

R

= 25 Ω

Turn-On Rise Time -Turn-Off Delay Time -Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 48 V, ID = 65A,

V

= 10 V

Gate-Source Charge -Gate-Drain Charge --

GS

(Note 4, 5)

--

24 58 94 200 98 210 52 114

--

33 43 10 11

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 65 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 260 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A -- -- 1.4 V Reverse Recovery Time VGS = 0 V, IS = 65 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 132 --

Starting TJ = 25°C

DSS,

F

-- 62 -- ns

ns ns ns ns

nC

FDP65N06 Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDP65N06 60V N-Channel MOSFET

, Drain Current [A]

D

I

300

100

V Top : 15 .0 V

1 0 .0 V 8 .0 V 7 .0 V 6 .5 V 6 .0 V Botto m : 5.5 V

10

2

0.1

GS

* No te s :

1. 2 5 0

2. T

110

VDS, Drain-Source Voltage [V]

µs Pulse Test

= 25oC

C

500

150oC

100

25oC

, Drain Current [A]

D

I

10

-55oC

* Notes :

= 40V

1. V

DS

µ s Pulse Test

1

246810

VGS, Ga te -So urc e V o ltag e [V]

2. 250

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.14

0.12

0.10

0.08

[Ω],

0.06

DS(ON)

R

0.04

Drain-Source On-Resistance

0.02

0 5 10 15 20

VGS = 10V

VGS = 20V

ID, Drain Current [A]

* Note : TJ = 25oC

100

10

1500C

250C

, Reverse Drain Current [A]

DR

I

1

0.20.40.60.81.01.21.4

VDS, Source-Drain Violtage [V]

* Note :

1. V

=0V

GS

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3000

2000

Capacitances [pF]

1000

0

-1

10

FDP65N06 Rev. A1

C

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

0

10

gd

= C

rss

gd

* Note :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040

VDS = 12V VDS = 30V

VDS = 48V

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

* Note : ID = 65A

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

FDP65N06 60V N-Channel MOSFET

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

* Notes :

1. V

2. I

TJ, Junction Temperature [oC]

= 0 V

GS

= 250 µA

D

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

10

, Drain Current [A]

10

D

I

10

3

2

1

0

-1 0

10

Operation in This Area is Limited by R

DS(on)

VDS, Drain-SourceVoltage[ V ]

10ms

100ms

DC

* Notes :

= 25 oC

1. T

C

2. T

= 150 oC

J

3. Single Pulse

1

10

1ms

100

80

µs

10

µs

10

70

60

50

40

30

, Drain Current [A]

D

I

20

10

2

0

25 50 75 100 125 150

TC, Case Temperature [oC]

* Notes :

1. V

2. I

D

= 10 V

GS

= 32.5 A

Figure 11. Transient Thermal Response Curve

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

(t), Thermal Response

FDP65N06 Rev. A1

?JC

Z

-5

10

single pulse

10

* Notes :

(t) = 0.92 0C/W Max.

1. Z

θJC

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

-4

-3

10

-2

10

-1

10

t1, Square Wave Pulse Duration [sec]

4 www.fairchildsemi.com

1/t2

(t)

θJC

0

10

1

10

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDP65N06 60V N-Channel MOSFET

FDP65N06 Rev. A1

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDP65N06 60V N-Channel MOSFET

FDP65N06 Rev. A1

6 www.fairchildsemi.com

Mechanical Dimensions

FDP65N06 60V N-Channel MOSFET

TO-220

FDP65N06 Rev. A1

Dimensions in Millimeters

7 www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

®

ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™

FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™

2

I

C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™

FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise

®

Programmable Active Droop™

ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™ POP™ Power247™

PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™

SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UniFET™

®

UltraFET VCX™ Wire™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDP65N06 60V N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

FDP65N06 Rev. A1

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I19

8 www.fairchildsemi.com