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FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench
MOSFET
FDP6030BL/FDB6030BL
July 2000
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings
DS(on)
TC = 25°C unless otherwise noted
Features
• 40 A, 30 V. R
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low R
• 175°C maximum junction temperature rating.
= 0.018 Ω @ VGS = 10 V
DS(ON)
= 0.024 Ω @ VGS = 4.5 V.
R
DS(ON)
.
DS(ON)
D
D
G
G
S
TO-263AB
FDB Series
S
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed 120
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range -65 to +175
(Note 1)
FDP6030BL FDB6030BL
±
20
40
60 W
0.36
Thermal Characteristics
θ
R
JC
θ
R
JA
Thermal Resistance, Junction-to-Case 2.5
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDB6030BL FDB6030BL 13’’ 24mm 800
FDP6030BL FDP6030BL Tube N/A 45
2000 Fairchild Semiconductor International
Units
V
A
W/°C
°
C
°
C/W
°
C/W
FDP6030BL/FDB6030BL Rev.C
Page 2
FDP6030BL/FDB6030BL
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalnche Current
(Note 1)
VDD = 15 V, ID = 40 A 150 mJ
40 A
Off Characteristics
BV
DSS
∆
DSS
BV
∆
T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆
GS(th)
V
∆
T
J
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
30 V
23
mV/°C
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Current,
VGS = 20 V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,
VGS = -20 V, VDS = 0 V -100 nA
Reverse
(Note 1)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 20 A,
= 10 V, ID = 20 A, TJ = 125°C
V
GS
V
= 4.5 V,ID = 17 A
GS
11.6 3 V
-4.5
0.015
0.021
0.019
0.018
0.030
0.024
mV/°C
On-State Drain Current VGS = 10 V, VDS = 10 V 40 A
Forward Transconductance VDS = 5 V, ID = 20 A 30 S
µ
A
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance 1160 pF
Output Capacitance 250 pF
= 15 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
(Note 1)
Turn-On Delay Time 9 17 ns
Turn-On Rise Time 11 20 ns
= 15 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
GEN
= 6
Ω
Turn-Off Delay Time 23 37 ns
Turn-Off Fall Time
Total Gate Charge 12 17 nC
Gate-Source Charge 3.2 nC
= 15 V,
V
DS
I
= 20 A, VGS = 5 V
D
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
VGS = 0 V, IS = 20 A
(Note 1)
Voltage
(Note 1)
100 pF
816ns
3.7 nC
40 A
0.95 1.2 V
FDP6030BL/FDB6030BL Rev.C
Page 3
T ypical Characteristics
FDP6030BL/FDB6030BL
80
VGS = 10V
70
60
50
40
30
20
, DRAIN-SOURCE CURRENT (A)
D
10
I
0
012345
6.0V
5.0V
4.5V
4.0V
3.5V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
3.0V
2.6
2.4
2.2
VGS = 3.0V
2
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTA N CE
0.8
0 1020304050
3.5V
4.0V
I
, DRAIN CURRENT (A)
D
4.5V
5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate V olt age.
1.8
ID = 20A
1.6
V
= 10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
VGS = 0V
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.06
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
DS(ON)
0.01
R
0
246810
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = 125oC
TA = 25oC
ID = 10 A
Figure 3. On-Resistance V ariation
with Temperature.
50
VDS = 5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
12345
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = -55oC
25oC
125oC
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance V ariation
with Gate-to-Source V oltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 6. Body Diode Forward V olt age
Variation with Source Current
and Temperature.
FDP6030BL/FDB6030BL Rev.C
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Typical Characteristics (continued)
FDP6030BL/FDB6030BL
10
ID = 20A VDS = 5V
8
15V
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25
, GATE CHARGE (nC)
Q
g
10V
1600
1400
1200
1000
800
600
CAPACITANCE (pF)
400
200
0
0 5 10 15 20 25 30
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
C
ISS
C
OSS
C
RSS
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
1000
VGS = 10V
SINGLE PULSE
= 2.5oC/W
R
JC
θ
= 25oC
T
R
DS(ON)
C
LIMIT
10ms
100ms
1ms
100µs
10
100
, DRAIN CURRENT (A)
D
I
1
0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
10µs
2500
SINGLE PULSE
R =2.5°C/W
JC
θ
T = 25°C
C
POWER (W)
2000
1500
1000
500
0
0.01 0.1 1 10 100 1,000
SINGLE PULSE TIME (mSEC)
f = 1 MHz
V
= 0 V
GS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.05
0.02
0.01
D = 0.5
0.2
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 2.5 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)θJC
J
C
Duty Cycle, D = t /t
1 2
JC
θ
0.5
E
V
I
T
0.3
C
E
0.2
F
F
E
D
0.1
E
Z
I
L
A
0.05
M
R
O
0.03
N
,
)
t
0.02
(
r
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.1 1 10 100 1000
Figure 11. T ransient Thermal Response Curve.
FDP6030BL/FDB6030BL Rev.C
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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