Page 1
tm
FDP2710
D
G
S
TO-220
G
S
D
250V N-Channel PowerTrench MOSFET
FDP2710 250V N-Channel PowerTrench MOSFET
November 2007
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process
cially tailored to minimize the on-state resistance and yet
maint
ain superior switching performance.
that has been espe-
Description
• 50A, 250V, R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
•RoHS compliant
= 36.3mΩ @VGS = 10 V
DS(on)
Application
• PDP application
Absolute Maximum Ratings
Symbol Parameter Ratings Unit
V
DS
V
GS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 250 V
Gate-Source voltage ± 30 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
50
31.3
See Figure 9
145 mJ
260
2.1
300 °C
DS(on)
A
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min Max Unit
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP2710 Rev. A
Thermal Resistance, Junction-to-Case -- 0.48 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDP2710 FDP2710 TO-220 - - 50
FDP2710 250V N-Channel PowerTrench MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
= 250μA, Referenced to 25°C -- 0.25 -- V/°C
I
D
= 250V, VGS = 0V,TC = 125°C
V
DS
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V
Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ
Forward Transconductance VDS = 10V, ID = 25A
Input Capacitance
= 25V, VGS = 0V,
V
Output Capacitance -- 426 570 pF
DS
f = 1.0MHz
(Note 4)
-- 63 -- S
-- 5470 7280 pF
Reverse Transfer Capacitance -- 97 146 pF
Turn-O n Delay Time
= 125V, ID = 50A
V
Turn-O n Ris e Ti me -- 252 515 ns
Turn-O ff Delay Time -- 112 235 ns
Turn-O ff Fall Time -- 154 320 ns
DD
V
GS
= 10V, R
GEN
= 25Ω
(Note 4, 5)
Total Gate Charge
V
= 125V, ID = 50A
Gate-Source Charge -- 34 -- nC
Gate-Drain Charge -- 18 -- nC
V
DS
GS
= 10V
(Note 4, 5)
-- 80 170 ns
-- 78 101 nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.2 V
Reverse Recovery Time VGS = 0V, IS = 50A
/dt =100A/μs (Note 4)
dI
Reverse Recovery Charge -- 1.3 -- μC
F
-- 163 -- ns
10
500μAμA
Notes:
1. Repetitive Rating: Pulse width limited
2. L = 1mH, I
3. ISD ≤ 50A, di/dt ≤ 100A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300
5. Essentially Independent of Operating Temperature Typical Characteristics
= 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
by maximum junction temperature
, Starting TJ = 25°C
DSS
μs, Duty Cycle ≤ 2%
FDP2710 Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
Bottom : 5.5 V
10
,Drain Current[A]
D
I
* Notes :
μs Pulse Test
1. 250
= 25oC
2. T
1
0.1 1 10
VDS,Drain-Source Voltage[V]
C
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
0.07
0.06
250
100
150oC
10
,Drain Current[A]
D
I
1
46810
25oC
-55oC
* Notes :
1. V
DS
2. 250
= 20V
μs Pulse Test
VGS,Gate-Source Voltage[V]
and Temperature
150
* Notes :
100
1. V
2. 250
=0V
GS
μs Pulse Test
FDP2710 250V N-Channel PowerTrench MOSFET
0.05
[Ω],
0.04
DS(ON)
R
VGS = 10V
VGS = 20V
0.03
Drain-Source On-Resistance
0.02
0 25 50 75 100 125 150
* Note : TJ = 25oC
ID, Drain Current [A]
10
, Reverse Drain Current [A]
S
I
TA = 150oC
1
0.20.40.60.81.01.2
TA = 25oC
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Capacitances [pF]
9000
6000
3000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
= C
rss
gd
0
-1
10
VDS, Drain-Source Voltage [V]
gd
C
iss
C
oss
* Note:
1. V
= 0V
C
rss
0
10
GS
2. f = 1MHz
1
10
30
10
VDS = 50V
V
= 125V
8
V
DS
DS
= 200V
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 1020304050607080
* Note : ID = 50A
Qg, Total Gate Charge [nC]
FDP2710 Rev. A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
2.5
FDP2710 250V N-Channel PowerTrench MOSFET
1.1
2
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
* Notes :
1. V
2. I
TJ, Junction Temperature [oC]
= 0V
GS
= 250μA
D
, [Normalized]
1
DS(on)
r
Drain-Source On-Resistance
0
-100 -50 0 50 100 150 200
* Notes :
1. V
2. I
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
500
100
10
[A]
D
1
Operation in This Area
is Limited by R
Drain Current, I
0.1
0.01
110100
* Notes :
1. T
C
2. T
J
3. Single Pulse
Drain-Source Voltage, VDS [V]
DS(on)
= 25oC
= 150oC
60
100μs
50
40
1ms
10 ms
DC
400
30
20
, Drain Current [A]
D
I
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
GS
= 25A
D
= 10V
FDP2710 Rev. A
n
Figure 11. Tra
0
10
]
0.5
θJC
-1
10
0.2
0.1
0.05
0.02
-2
10
0.01
Thermal Response [Z
Single pulse
-3
10
-5
10
-4
10
sient Thermal Response Curve
P
DM
t
1
t
* Notes :
1. Z
(t) = 0.48oC/W Max.
θJC
2. Duty Factor, D=t
3. TJM - TC = PDM * Z
-3
10
-2
10
-1
10
2
1/t2
(t)
θJC
0
10
1
10
Rectangular Pulse Duration [sec]
4 www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDP2710 250V N-Channel PowerTrench MOSFET
FDP2710 Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP2710 250V N-Channel PowerTrench MOSFET
FDP2710 Rev. A
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FDP2710 250V N-Channel PowerTrench MOSFET
TO - 220
FDP2710 Rev. A
Dimensions in Millimeters
7 www.fairchildsemi.com
Page 8
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FDP2710 250V N-Channel PowerTrench MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FDP2710 Rev. A
8 www.fairchildsemi.com
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