Datasheet FDP15N65, FDPF15N65 Datasheet (Fairchild)

FDP15N65 / FDPF15N65

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

G

S

650V N-Channel MOSFET

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

April 2007

TM

UniFET

Features

• 15A, 650V, R

• Low gate charge ( typical 48.5 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 23.6 pF)

rss

= 0.44Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Absolute Maximum Ratings

Symbol Parameter FDP15N65 FDPF15N65 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

J, TSTG

T

L

* Drain current limited by maximum junction termperature.

Drain-Source Voltage 650 V

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 15 A

Repetitive Avalanche Energy (Note 1) 25.0 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

(Note 1)

(Note 2)

15

9.5

60 60*

637 mJ

250

2.0

300 °C

9.5*

38.5

15*

0.3

W/°C

Thermal Characteristics

A A

A

W

Symbol Parameter FDP15N65 FDPF15N65 Unit

R

θJC

R

θCS

R

θJA

FDP15N65 / FDPF15N65 Rev. B

Thermal Resistance, Junction-to-Case 0.5 3.3 °C/W

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tap e Width Quantity

FDP15N65 FDP15N65 TO-220 -- -- 50

FDPF15N65 FDPF15N65 TO-220F -- -- 50

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 650 -- -- V

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V

ID = 250μA, Referenced to 25°C -- 0.65 -- V/°C

VDS = 520V, TC = 125°C

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

Static Drain-Source On-Resistance

VGS = 10V, ID = 7.5A -- 0.36 0.44 Ω

Forward Transconductance VDS = 40V, ID = 7.5A (Note 4) -- 19.2 -- S

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 295 385 pF

f = 1.0MHz

-- 2380 3095 pF

Reverse Transfer Capacitance -- 23.6 35.5 pF

Turn-O n Delay Time VDD = 325V, ID = 15A

Turn-O n Rise Time -- 125 260 ns

RG = 21.7Ω

-- 65 140 ns

Turn-O ff Delay Tim e -- 105 220 ns

Turn-O ff Fall Time -- 65 140 ns

Total Gate Charge VDS = 520V, ID = 15A

Gate-Source Charge -- 14.0 -- nC

VGS = 10V

Gate-Drain Charge -- 21.2 -- nC

(Note 4, 5)

-- 48.5 63.0 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 15A

Reverse Recovery Charge -- 5.69 -- μC

dIF/dt =100A/μs (Note 4)

-- 496 -- ns

10

1

μA μA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDP15N65 / FDPF15N65 Rev. B

2 www.fairchildsemi.com

Typical Performance Characteristics

24681012

10

0

10

1

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 1020304050

0.0

0.2

0.4

0.6

0.8

1.0

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

0

10

1

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drai n voltage [ V]

0 1020304050

0

2

4

6

8

10

12

VDS = 325V

VDS = 130V

VDS = 520V

* Note : ID = 15A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP15N65 / FDPF15N65 Rev. B

3 www.fairchildsemi.com

25 50 75 100 125 150

0

3

6

9

12

15

18

I

D

, Drain Current [A]

TC, Case Temperature [oC]

Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS

= 0 V

2. I

D

= 250 μA

BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 5.5 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperat ure [oC]

-100 - 50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 7.5 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in Thi s Area is Limit ed by R

DS(on)

* Notes :

1. T

C

= 25 oC

2. T

J

= 150 oC

3. Single Pulse

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in T his Area is Limited by R

DS(on)

* Notes :

1. T

C

= 25 oC

2. T

J

= 150 oC

3. Single Pulse

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9-1. Safe Operating Area for FDP15N65 Figure 9-2. Safe Operating Area for FDPF15N65

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

Figure 10. Maximum Drain Current vs. Case Temperature

FDP15N65 / FDPF15N65 Rev. B

4 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* Note s :

1. Z

θJC

(t) = 0.5 oC/W Max.

2. D uty Fac tor, D = t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

t

1

P

DM

t

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* No tes :

1. Z

θJC

(t) = 3.3 oC/W Max.

2. D uty F acto r, D =t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, S qua re W ave P u lse D u ratio n [se c ]

t

1

P

DM

t

2

Figure 11-1. Transient Thermal Response Curve for FDP15N65

Figure 11-2. Transient Thermal Response Curve for FDPF15N65

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

FDP15N65 / FDPF15N65 Rev. B

5 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

FDP15N65 / FDPF15N65 Rev. B

6 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

FDP15N65 / FDPF15N65 Rev. B

7 www.fairchildsemi.com

Mechanical Dimensions

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

TO - 220

FDP15N65 / FDPF15N65 Rev. B

Dimensions in Millimeters

8 www.fairchildsemi.com

Mechanical Dimensions (Continued)

(7.00)

(0.70)

MAX1.47

(30°)

#1

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54

±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54

±0.20]

2.54TYP

[2.54

±0.20]

0.50

+0.10 –0.05

TO-220F

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

FDP15N65 / FDPF15N65 Rev. B

Dimensions in Millimeters

9 www.fairchildsemi.com

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FDP15N65 / FDPF15N65 650V N-Channel MOSFET

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-

continued by Fairchild Semiconductor.The datasheet is printed for reference information only.

Rev. I26

10 www.fairchildsemi.com

FDP15N65 / FDPF15N65 Rev. B