Page 1
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
FDH15N50 / FDP15N50 / FDB15N50
August 2003
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced r
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
DS(ON)
• 175°C Rated Junction Temperature
Package
DRAIN
(BOTTOM)
SOURCE
DRAIN
GATE
TO-247
FDH SERIES
GATE
SOURCE
TO-263AB
FDB SERIES
Absolute Maximum Ratings T
DRAIN
(FLANGE)
o
= 25
C unless otherwise noted
C
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
Symbol
G
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
I
D
P
, T
T
J
Continuous (T
Continuous (T
1
Pulsed
Power dissipation
D
Derate above 25
Operating and Storage Temperature -55 to 175
STG
= 25oC, VGS = 10V)
C
= 100oC, VGS = 10V) 11 A
C
o
C
15 A
60 A
300
2
Soldering Temperature for 10 seconds 300 (1.6mm from case)
D
S
W
W/oC
o
C
o
C
Thermal Characteristics
R
R
R
©2003 Fairchild Semiconductor Corporation
Thermal Resistance Junction to Case 0.50
θJC
Thermal Resistance Junction to Ambient (TO-247) 40
θJA
Thermal Resistance Junction to Ambient (TO-220, TO-263) 62
θJA
o
C/W
o
C/W
o
C/W
FDH15N50 / FDP15N50 / FDB15N50 RevD2
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDH15N50 FDH15N50 TO-247 Tube - 30
FDP15N50 FDP15N50 TO-220 Tube - 50
FDB15N50 FDB15N50 TO-263 330mm 24mm 800
FDH15N50 / FDP15N50 / FDB15N50
Electrical Characteristics
TJ = 25°C (unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Units
Statics
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 500 - - V
/∆TJBreakdown Voltage Temp. Coefficient
Reference to 25
ID = 1mA
o
C,
-0.58-V/°C
Drain to Source On-Resistance VGS = 10V, ID = 7.5A - 0.33 0.38 Ω
Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.4 4.0 V
V
= 500V TC = 25oC- - 25
Zero Gate Voltage Drain Current
DS
= 0V TC = 150oC- - 250
V
GS
Gate to Source Leakage Current VGS = ±30V - - ±100 nA
∆B
B
VDSS
VDSS
r
DS(ON)
V
GS(th)
I
DSS
I
GSS
Dynamics
g
Q
g(TOT)
Q
Q
t
d(ON)
t
d(OFF)
C
C
OSS
C
RSS
Forward Transconductance VDD = 10V, ID = 7.5A 10 - - S
fs
Total Gate Charge at 10V
Gate to Source Gate Charge - 7.2 10 nC
gs
Gate to Drain “Miller” Charge - 12 16 nC
gd
Tur n-On Delay Time
t
Rise Time - 5.4 - ns
r
Turn-Off Delay Time - 26 - ns
t
Fall Time - 5 - ns
f
Input Capacitance
ISS
Output Capacitance - 230 - pF
Reverse Transfer Capacitance - 16 - pF
V
= 10V,
GS
V
= 400V,
DS
= 15A
I
D
= 250V,
V
DD
= 15A,
I
D
= 6.2Ω,
R
G
R
= 17Ω
D
= 25V, VGS = 0V,
V
DS
f = 1MHz
-3341nC
-9-ns
-1850- pF
µA
Avalanche Characteristics
E
I
AR
Single Pulse Avalanche Energy
AS
Avalanche Current - - 15 A
2
760 - - mJ
Drain-Source Diode Characteristics
I
I
SM
V
t
Q
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
©2003 Fairchild Semiconductor Corporation FDH15N50 / FDP15N50 / FDB15N50 RevD2
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Source to Drain Diode Voltage I
SD
Reverse Recovery Time ISD = 15A, diSD/dt = 100A/µs - 470 730 ns
rr
Reverse Recovered Charge ISD = 15A, diSD/dt = 100A/µs - 5 6.6 µC
RR
= 25°C, L = 7.0mH, IAS = 15A
J
MOSFET symbol
showing the
integral reverse
p-n junction diode.
= 15A - 0.86 1.2 V
SD
D
G
S
--15A
--60A
Page 3
Typical Characteristics
FDH15N50 / FDP15N50 / FDB15N50
100
TJ = 25oC
VGS DESCENDING
10V
6.5V
6V
5.5V
5V
4.5V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
, DRAIN TO SOURCE CURRENT (A)
D
I
1
110100
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
TJ = 175oC
VGS DESCENDING
10V
6V
5.5V
5V
4.5V
4V
10
, DRAIN TO SOURCE CURRENT (A)
D
I
1
110100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% M AX
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
50
VDD = 100V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
TJ = 175oC
TJ = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
PULSE DURATION = 80µs
3.0
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
NORMALIZED ON RESISTANCE
0
-50 -25 0 25 50 75 100 150 175
VGS = 10V, ID = 7.5A
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
125
4000
1000
100
C, CAPACITANCE (pF)
V
= 0V, f = 1MHz
GS
10
1 10 100
C
ISS
C
OSS
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source
Voltage
©2003 Fairchild Semiconductor Corporation FDH15N50 / FDP15N50 / FDB15N50 RevD2
15
ID = 15A
12
9
6
3
100V
250V
400V
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 10203040
50
Qg, GATE CHARGE (nC)
Figure 6. Gate Charge Waveforms For Constant
Gate Current
Page 4
Typical Characteristics
FDH15N50 / FDP15N50 / FDB15N50
30
25
20
15
10
5
TJ = 175oC
TJ = 25oC
, SOURCE TO DRAIN CURRENT (A)
SD
I
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
16
12
8
100
10
1.0
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS AREA
LIMITED BY R
0.1
1 10 100 1000
DS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Maximum Safe Operating Area
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0
t
= (L/R)ln[(IAS*R)/(1.3*RATED BV
AV
10
- VDD)
DSS
DSS
STARTING TJ = 25oC
- VDD) +1]
TC = 25oC
100µs
1ms
10ms
DC
4
, DRAIN CURRENT (A)
D
I
0
25 50 75 100 125 175
150
TC, CASE TEMPERATURE (oC)
Figure 9. Maximum Drain Current vs Case
Temperature
0
10
0.50
0.20
-1
10
0.10
0.05
0.02
, NORMALIZED THERMAL RESPONSE
0.01
JC
θ
-2
Z
10
10
-5
SINGLE PULSE
10
-4
-3
10
t1, RECTANGULAR PULSE DU R ATION (s)
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 5010
STARTING TJ = 150oC
tAV, TIME IN AVALANCHE (ms)
Figure 10. Unclamped Inductive Switching
Capability
t
1
P
D
t
2
DUTY FACTOR, D = t1 / t
PEAK TJ = (PD X Z
-2
10
-1
10
10
X R
θ
JC
0
2
θJC
) + T
C
1
10
©2003 Fairchild Semiconductor Corporation FDH15N50 / FDP15N50 / FDB15N50 RevD2
Page 5
Test Circuits and Waveforms
FDH15N50 / FDP15N50 / FDB15N50
VARY t
TO OBTAIN
P
REQUIRED PEAK I
V
GS
V
DS
L
I
AS
R
AS
G
+
V
DD
-
BV
DSS
t
P
V
DS
DUT
t
0V
P
I
AS
0.01Ω
0
t
AV
Figure 12. Unclamped Energy Test Circuit Figure 13. Unclamped Energy Waveforms
V
I
g(REF)
DS
R
L
V
GS
+
V
DD
-
DUT
V
DD
V
0
I
g(REF)
0
GS
V
GS
= 1V
Q
g(TOT)
V
DS
Q
g(TH)
Q
gs
Q
gd
V
DD
V
= 10V
GS
Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms
V
DS
R
L
V
GS
R
GS
V
GS
DUT
+
V
DD
-
V
DS
0
V
GS
10%
0
t
d(ON)
90%
t
ON
50%
10%
t
r
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
90%
10%
Figure 16. Switching Time Test Circuit Figure 17. Switching Time Waveform
©2003 Fairchild Semiconductor Corporation FDH15N50 / FDP15N50 / FDB15N50 RevD2
Page 6
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or syst em s
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I3
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