Datasheet FDP047N08 Datasheet (Fairchild)

tm

FDP047N08

N-Channel PowerTrench® MOSFET

75V, 164A, 4.7mΩ

FDP047N08 N-Channel PowerTrench

March 2008

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

= 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A

DS(on)

G

D

S

TO-220
FDP Series

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

DS(on)

Application

• DC to DC convertors / Synchronous Rectification

®

MOSFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.0 V/ns
P

D

, T

T

J

STG

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.

Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V

D r a i n C urrent
Drain Current - Pulsed (Note 1) 656 A

Single Pulsed Avalanche Energy (Note 2) 670 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 268 W

C

- Derate above 25

= 25oC) 164* A

C

= 100oC) 116* A

C

o

C1.79W/

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC
θCS

R

θJA

©2008 Fairchild Semiconductor Corporation
FDP047N08 Rev. A

Thermal Resistance, Junction to Case 0.56
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5

www.fairchildsemi.com1

o

C

o

C

o

C

o

C/WR

FDP047N08 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP047N08

FDP047N08 TO-220 - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC75 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC - 0.02 - V/oC

D

V

= 75V, V

DS

= 75V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 80A - 3.7 4.7 mΩ
Forward Transconductance VDS = 10V , ID = 80A (Note 4) - 150 - S

Input Capacitance
Output Capacitance - 870 1155 pF
Reverse Transfer Capacitance - 410 615 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

- 7080 9415 pF

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g(tot)
gs

gd

Turn-On Delay Time
Turn-On Rise Time - 147 304 ns
Turn-Off Delay Time - 220 450 ns
Turn-Off Fall Time - 114 238 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 37 - nC

Gate to Drain “Miller” Charge - 32 - nC

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 164 A
Maximum Pulsed Drain to Source Diode Forward Current - - 656 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 66 - nC

, Starting TJ = 25°C

DSS

= 37.5V, ID = 80A

V

DD

R

= 25Ω, VGS = 10V

GEN

(Note 4, 5)

V

= 60V, ID = 80A

DS

V

= 10V

GS

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 80A - - 1.25 V

SD

= 80A

SD

- 100 210 ns

- 117 152 nC

-45-ns

FDP047N08 Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

100

6.5 V

6.0 V

5.5 V

10

,Drain Current[A]

D

I

*Notes:

µs Pulse Test

1. 250
= 25oC

2. T

1

0.002 0.01 0.1 1

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.006

500

*Notes:

1. V

= 20V

DS

µs Pulse Test

2. 250

100

175oC

10

,Drain Current[A]

D

I

1

34567

25oC

-55oC

VGS,Gate-Source Voltage[V]

500

FDP047N08 N-Channel PowerTrench

®

MOSFET

0.005

VGS = 10V

[Ω],

0.004

DS(ON)

R

VGS = 20V

100

175oC

25oC

10

0.003

, Reverse Drain Current [A]

Drain-Source On-Resistance

S

I

*Note: TC = 25oC

0.002
0 100 200 300 400

ID, Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12000

C

iss

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

= C

gd

gd

1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Body Diode Forward Voltage [V]

10

VDS = 15V

= 37.5V

V

8

V

DS
DS

= 60V

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

8000

6

C

oss

4000

Capacitances [pF]

C

rss

*Note:

= 0V

1. V

GS

2. f = 1MHz

4

, Gate-Source Voltage [V]

GS

V

2

0

FDP047N08 Rev. A

0.1 1 10 30
VDS, Drain-Source Voltage [V]

0

0 20406080100120

*Note: ID = 80A

Qg, Total G a te C harge [n C]

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs.
vs. Temperature

1.15

Temperature

2.5

FDP047N08 N-Channel PowerTrench

1.10

2.0

1.05

, [Normalized]

1.00

DSS

BV

0.95

Drain-Source Breakdown Voltage

0.90

-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

= 0V

GS

= 10mA

D

1.5

, [Normalized]

DS(on)

R

1.0

Drain-Source On-Resistance

0.5

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

GS

= 80A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

1000

30µs

10ms

DC

= 25oC

C

= 175oC

J

100µs

1ms

100

Operation in This Area

10

is Limited by R

, Drain Current [A]

D

I

1

0.1
110100

DS(on)

*Notes:

1. T

2. T

3. Single Pulse

VDS, Drain-Source Voltage [V]

180

150

120

90

60

, Drain Current [A]

D

Limited by package

I

30

0

25 50 75 100 125 150 175

TC, Case Tempera ture [oC]

Figure 11. Transient Thermal Response Curve

®

MOSFET

FDP047N08 Rev. A

]

θJC

Thermal Response [Z

0.1

0.01

1E-3

2
1

0.5

0.2

0.1

0.05

0.02

0.01

-5

10

Single pulse

P

DM

t

1

t

*Notes:

1. Z

2. Duty F act o r, D = t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

2

(t) = 0.56oC/W Max.

θJC

1/t2

θJC

110

Rectangular Pulse Duration [sec]

4

(t)

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDP047N08 N-Channel PowerTrench

®

MOSFET

FDP047N08 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

DUT

I

I

SD

SD

Driver

Driver

R

R

G

G

V

V

GS

GS

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DUT

as DUT

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

FDP047N08 N-Channel PowerTrench

®

V

V

DD

DD

MOSFET

V

V

GS

GS

( Driver )

( Driver )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

Gate Pulse Width

Gate Pulse Width

Gate Pulse Width

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forward Current

IFM, Body Diode Forward Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

Body Diode Recoverydv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Voltage Drop

Forward Voltage Drop

di/dt

di/dt

10V

10V

V

V

DD

DD

FDP047N08 Rev. A

6

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Mechanical Dimensions

FDP047N08 N-Channel PowerTrench

TO-220

®

MOSFET

FDP047N08 Rev. A

7

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FDP047N08 N-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild Semiconductor. The datasheet is printed for reference infor­mation only.

Rev. I33

FDP047N08 Rev. A

8

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