Datasheet FDP030N06 Datasheet (Fairchild)

Download

Page 1

TO-220

FDP030N06

N-Channel PowerTrench® MOSFET

60V, 193A, 3.2mΩ

FDP030N06 N-Channel PowerTrench

June 2009

Features

• R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings

DSS

GSS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns P

TJ, T T

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

= 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 1) 772 A Single Pulsed Avalanche Energy (Note 2) 1434 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TC = 25

C unless otherwise noted

-Continuous (TC = 25oC, Silicon Limited) 193*

-Continuous (TC = 25oC, Package Limited) 120

(TC = 25oC) 231 W

- Derate above 25oC 1.54 W/oC

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

300

Thermal Characteristics

Symbol Parameter Ratings Units

θJC

θJA

Thermal Resistance, Junction to Case 0.65 Thermal Resistance, Junction to Ambient 62.5

C/W

MOSFET

A-Continuous (TC = 100oC, Silicon Limited) 136*

C C

www.fairchildsemi.com1

Page 2

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP030N06 FDP030N06 TO-220 - - 50

FDP030N06 N-Channel PowerTrench

Electrical Characteristics

TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ∆BV

∆T I

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 60 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS = ±20V, V

ID = 1mA, Referenced to 25oC - 0.05 - V/oC VDS = 48V, V

= 0V - - 1

VDS = 48V, TC = 150oC - - 500

= 0V - - ±100 nA

On Characteristics

GS(th)

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.5 4.5 V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.6 3.2 mΩ Forward Transconductance VDS = 10V, ID = 75A

(Note 4)

- 154 - S

Dynamic Characteristics

iss

oss

rss

g(tot)

Switching Characteristics

d(on)

d(off)

Input Capacitance Output Capacitance - 1095 1455 pF Reverse Transfer Capacitance - 415 625 pF

VDS = 25V, VGS = 0V f = 1MHz

Total Gate Charge at 10V Gate to Source Gate Charge - 40 - nC

Gate to Drain “Miller” Charge - 35 - nC

VDS = 48V, ID = 75A VGS = 10V

(Note 4, 5)

- 7380 9815 pF

- 116 151 nC

Turn-On Delay Time Turn-On Rise Time - 178 366 ns Turn-Off Delay Time - 54 118 ns Turn-Off Fall Time - 33 76 ns

VDD = 30V, ID = 75A VGS = 10V, R

(Note 4, 5)

GEN

= 4.7Ω

- 39 87 ns

µA

MOSFET

Drain-Source Diode Characteristics

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDP030N06 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 193 A Maximum Pulsed Drain to Source Diode Forward Current - - 772 A Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 50 - nC

, Starting TJ = 25°C

DSS

= 0V, I

VGS = 0V, I

= 75A - - 1.3 V

SD SD

dIF/dt = 100A/µs

= 75A

(Note 4)

- 46 - ns

www.fairchildsemi.com

Page 3

Typical Performance Characteristics

2 4 6 8

100

400

-55oC

150oC

*Notes:

1. VDS = 10V

2. 250

µµµµ

s Pulse Test

25oC

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 5

100

700

*Notes:

1. 250

µµµµ

s Pulse Test

2. TC = 25oC

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

, Drain Current[A]

VDS, Drain-Source Voltage[V]

0 70 140 210 280 350

2.0

2.5

3.0

3.5

*Note: TC = 25oC

VGS = 20V

VGS = 10V

DS(ON)

[

Ω

]

Drain-Source On-Resistance

ID, Drain Current [A]

0.0 0.5 1.0 1.5

100

400

*Notes:

1. VGS = 0V

2. 250

µµµµ

s Pulse Test

150oC

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 20 40 60 80 100 120

*Note: ID = 75A

VDS = 15V VDS = 30V VDS = 48V

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 30

3000

6000

9000

12000

oss

iss

= Cgs + Cgd (Cds = shorted

)

oss

= Cds + C

rss

= C

*Note:

1. VGS = 0V

2. f = 1MHz

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP030N06 N-Channel PowerTrench

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP030N06 Rev. A

www.fairchildsemi.com

Page 4

FDP030N06 N-Channel PowerTrench

-100 -50 0 50 100 150 200

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 10mA

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature

[

]

-100 -50 0 50 100 150 200

0.5

1.0

1.5

2.0

*Notes:

1. VGS = 10V

2. ID = 75A

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature

[

]

0.1 1 10 100 300

0.1

100

1000

10000

100ms

100

µµµµ

1ms 10ms

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R

DS(on)

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

25 50 75 100 125 150 175

100

150

200

Limited by package

, Drain Current [A]

TC, Case Temperature

[

]

-5

-4

-3

-2

-1

0.01

0.1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θθθθ

(t) = 0.65oC/W Max.

2. Duty Factor, D= t1/t

3. TJM - TC = PDM * Z

θθθθ

(t)

0.5

Single pulse

Thermal Response

[

]

Rectangular Pulse Duration [sec]

Typical Performance Characteristics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

MOSFET

Figure 11. Transient Thermal Response Curve

FDP030N06 Rev. A

www.fairchildsemi.com

Page 5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP030N06 N-Channel PowerTrench

MOSFET

FDP030N06 Rev. A

www.fairchildsemi.com

Page 6

D U T

D S

D r iv e r

S a m e T y p e

a s D U T

G S

• d v / d t c o n t r o l le d b y R

• I

S D

c o n t r o l le d b y p u ls e p e r io d

D D

S D

1 0 V

G S

( D r i v e r )

S D

( D U T )

D S

( D U T )

D D

B o d y D i o d e

F o r w a r d V o lt a g e D r o p

S D

F M

, B o d y D i o d e F o r w a r d C u r r e n t

B o d y D i o d e R e v e r s e C u r r e n t

R M

B o d y D i o d e R e c o v e r y d v / d t

d i / d t

D =

G a t e P u l s e W id t h

G a t e P u l s e P e r io d

- - - - - - - - - - - - - - - - - - - - - - - - - -

D U T

D S

D r iv e r

S a m e T y p e

a s D U T

G S

• d v / d t c o n t r o l le d b y R

• I

S D

c o n t ro lle d b y p u l s e p e r io d

D D

S D

1 0 V

G S

( D r i v e r )

S D

( D U T )

D S

( D U T )

D D

B o d y D i o d e

F o r w a r d V o lt a g e D r o p

S D

F M

, B o d y D i o d e F o r w a r d C u r r e n t

B o d y D i o d e R e v e r s e C u r r e n t

R M

B o d y D i o d e R e c o v e r y d v / d t

d i / d t

D =

G a t e P u l s e W id t h

G a t e P u l s e P e r io d

- - - - - - - - - - - - - - - - - - - - - - - - - -

D =

G a t e P u l s e W id t h

G a t e P u l s e P e r io d

- - - - - - - - - - - - - - - - - - - - - - - - - -

FDP030N06 N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

MOSFET

FDP030N06 Rev. A

www.fairchildsemi.com

Page 7

Mechanical Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10

2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30

18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30

+0.10 –0.05

0.50

+0.10 –0.05

2.54TYP

[2.54 ±0.20]

2.54TYP

[2.54 ±0.20]

TO-220

FDP030N06 N-Channel PowerTrench

MOSFET

FDP030N06 Rev. A

www.fairchildsemi.com

Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST

FPS™ F-PFS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

FastvCore™ FETBench™ FlashWriter

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™

VisualMax™ XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.

As used herein:

1. Li fe support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. Fairchild w ill not pro vide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I41