Datasheet FDN352AP Datasheet (Fairchild)

Download

Page 1

■

. ■

■

° C

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

FDN352AP Single P-Channel, PowerTrench

MOSFET

FDN352AP Single P-Channel, PowerTrench

August 2005

Features

–1.3 A, –30V R –1.1 A, –30V R

High performance trench technology for extremely low R

DS(ON)

High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

= 180 m Ω @ V

DS(ON)

= 300 m Ω @ V

DS(ON)

= –10V

= –4.5V

Applications

Notebook computer power management

SuperSOT™-3

General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.

G S

MOSFET

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

GSS

, T

STG

Thermal Characteristics

Drain-Source Voltage –30 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a) –1.3 A

– Pulsed –10

Power Dissipation for Single Operation (Note 1a) 0.5 W

(Note 1b) 0.46

Operating and Storage Junction Temperature Range –55 to +150

Thermal Resistance, Junction-to-Ambient (Note 1a) 250

Thermal Resistance, Junction-to-Case (Note 1) 75

25 V

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

52AP FDN352AP 7’’ 8mm 3000 units

FDN352AP Rev. C1

C/W

www.fairchildsemi.com

Page 2

∆

Electrical Characteristics

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆ T

DSS

GSS

On Characteristics (Note 2)

GS(th)

∆ T

DS(on)

Dynamic Characteristics

iss

oss

rss

Switching Characteristics (Note 2)

d(on)

d(off)

Drain–Source Diode Characteristics and Maximum Ratings

Notes:

1. R surface of the drain pins R

(a) R

(b) R

2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%

Drain–Source Breakdown Voltage V

Breakdown Voltage Temperature Coefﬁcient I

DSS

Zero Gate Voltage Drain Current V

Gate–Body Leakage V

Gate Threshold Voltage V

Gate Threshold Voltage Temperature Coefﬁcient

Static Drain–Source On–Resistance

Forward Transconductance V

Input Capacitance V

= 0 V, I

= –250 µ A, Referenced to 25 ° C –17 mV/ ° C

= –24 V, V

= ± 25 V, V

= V

= –250 µ A, Referenced to 25 ° C4mV/ ° C

= –10 V, I

= –4.5 V, I

= –5 V, I

= –15 V, V

= –250 µ A –30 V

= 0 V –1

= 0 V

, I

= –250 µ A –0.8 –2.0 –2.5 V

= –1.3 A

= –1.1 A

= –1.1 A, T

= –0.9 A 2.0 S

= 0 V, f = 1.0 MHz 150 pF

= 125 ° C

150 250 330

100 nA

180 300 400

Output Capacitance 40 pF

Reverse Transfer Capacitance 20 pF

Tu r n–On Delay Time V

Tu r n–On Rise Time 15 28 ns

= –10 V, I

= –10 V, R

= –1 A,

GEN

48ns

= 6 Ω

Tu r n–Off Delay Time 10 18 ns

Tu r n–Off Fall Time 12ns

Total Gate Charge V

Gate–Source Charge 0.5 nC

= –10V, I = –4.5 V

= –0.9 A,

1.4 1.9 nC

Gate–Drain Charge 0.5 nC

Maximum Continuous Drain–Source Diode Forward Current –0.42 A

Drain–Source Diode Forward Voltage V

Diode Reverse Recovery Time I

Diode Reverse Recovery Charge 7 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting

= 250°C/W when mounted on a 0.02 in

= 270°C/W when mounted on a 0.001 in

is guaranteed by design while R

pad of 2oz. copper.

= 0 V, I

= –3.9 A,

/dt = 100 A/µs

is determined by the user’s board design.

= –0.42 A (Note 2) –0.8 –1.2 V

17 ns

m Ω

FDN352AP Single P-Channel, PowerTrench

MOSFET

FDN352AP Rev. C1

www.fairchildsemi.com

Page 3

Typical Characteristics

FDN352AP Single P-Channel, PowerTrench

VGS = -10V

, DRAIN CURRENT (A)

-I

012345

-6.0V

-4.5V

-V

, DRAIN TO SOURCE VOLTAGE (V)

-4.0V

-3.5V

-3.0V

2.4 VGS = -4.0V

2.2

2.0

1.8

1.6

, NORMALIZED

1.4

DS(ON)

1.2

DRAIN-SOURCE ON-RESISTANCE

1.0

0.8

-4.5V

-5.0V

-6.0V

-7.0V

0 246810

-ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -0.9A

= -10V

1.2

, NORMALIZED

DS(ON)

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.7

0.6

0.5

0.4

0.3

, ON-RESISTANCE (OHM)

TA = 25oC

DS(ON)

0.2

0.1

246810

TA = 125oC

-VGS, GATE TO SOURCE VOLTAGE (V)

-8.0V

-10V

ID = -0.45A

MOSFET

Figure 3. On-Resistance Variation with

Temperature.

VDS = -5V

, DRAIN CURRENT (A)

-I

12345678

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

-I

0.0001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TA = 125oC

25oC

-55oC

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN352AP Rev. C1

www.fairchildsemi.com

Page 4

Typical Characteristics

FDN352AP Single P-Channel, PowerTrench

ID = -0.9A

, GATE-SOURCE VOLTAGE (V)

-V

0 0.5 1 1.5 2 2.5 3

VDS = -10V

-20V

-15V

Qg, GATE CHARGE (nC)

200

150

iss

100

CAPACITANCE (pF)

rss

051015 20 25 30

oss

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

LIMIT

DS(ON)

, DRAIN CURRENT (A)

-I

0.01

VGS = -10V

0.1

SINGLE PULSE

= 270oC/W

= 25oC

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

10s

100ms

100µs

1ms

10ms

P(pk), PEAK TRANSIENT POWER (W)

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

f = 1 MHz V

SINGLE PULSE

= 270°C/W

= 25°C

= 0 V

MOSFET

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

RθJA(t) = r(t) * Rθ

RθJA = 270°C/W

P(pk)

– TA = P * RθJA(t)

Duty Cycle, D = t

0.1

0.01

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

/ t

FDN352AP Rev. C1

www.fairchildsemi.com

Page 5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

CMOS™ EnSigna™ FACT™

FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



FAST FASTr™

LittleFET™

FRFET™ GlobalOptoisolator™ GTO™ HiSeC™

C™ i-Lo™ ImpliedDisconnect™

IntelliMAX™



ISOPLANAR™

MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC



OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™

PowerSaver™ PowerTrench



QFET



QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™



Wire™



FDN352AP Single P-Channel, PowerTrench

MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

FDN352AP Rev. C1

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I16

5 www.fairchildsemi.com