Datasheet FDN342P Datasheet (Fairchild)

FDN342P

P-Channel 2.5V Specified PowerTrenchTM MOSFET

FDN342P

August 1999

General Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).

Features

 -2 A, -20 V. R

R

DS(ON)

= 0.08 Ω @ V = 0.13 Ω @ V

 Rugged gate rating (±12V).

= -4.5 V

GS

= -2.5 V.

GS

 High performance trench technology for extremely

Applications

 Load switch

low R

 Enhanced power SuperSOT

DS(ON)

.

TM-3

(SOT-23).

 Battery protection  Power management

D

S

SuperSOT -3

TM

Absolute Maximum Ratings T

G

= 25°C unless otherwise noted

A

G

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V Gate-Source Voltage Drain Current - Continuous (Note 1a) -2 A

- Pulsed -10

Power Dissipation for Single Operation (Note 1a) 0.5 W

(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

S

±12

0.46

V

°C

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDN342P FDN342P 7’’ 8mm 3000 units

1999 Fairchild Semiconductor Corporation

°C/W °C/W

FDN342P Rev. B

FDN342P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BVDSS ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

V

= 0 V, ID = -250 µA

GS

= -250 µA,Referenced to 25°C

I

D

-20 V

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 Gate-Body Leakage Current,

VGS = 12 V, VDS = 0 V 100 nA Forward Gate-Body Leakage Current,

VGS = -12 V, VDS = 0 V -100 nA Reverse

-16

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th) ∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient Static Drain-Source

On-Resistance

= VGS, ID = -250 µA

V

DS

I

= -250 µA,Referenced to 25°C

D

VGS = -4.5 V, ID = -2 A

= -4.5 V, ID = -2 A,TJ=125°C

V

GS

V

= -2.5 V, ID = -1.5 A

GS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -5 A Forward Transconductance VDS = -5 V, ID = -5 A 7 S

-0.6 -1.05 -1.5 V 3

0.062

0.086

0.099

mV/°C

0.08

0.14

0.13

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 635 pF Output Capacitance 175 pF Reverse Transfer Capacitance

= -10 V, VGS = 0 V

V

DS

f = 1.0 MHz

75 pF

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

Turn-On Delay Time 20 35 ns Turn-On Rise Time 8 16 ns Turn-Off Delay Time 9 18 ns Turn-Off Fall Time

g gs gd

Total Gate Charge 6.3 9 nC Gate-Source Charge 1.5 nC Gate-Drain Charge

V

= -10 V, ID = -1 A

DD

= -4.5 V, R

V

GS

= -10 V, ID = -2 A

V

DS

= -4.5 V,

V

GS

GEN

= 6 Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

θJA

surface of the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -0.42 A Drain-Source Diode Forward

VGS = 0 V, IS = -0.42 A (Note 2) -0.7 -1.2 V

Voltage

is guaranteed by design while R

θJC

a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. Cu.

is determined by the user's board design.

θCA

b) 270°C/W when mounted on a mininum pad.

19 32 ns

1.7 nC

FDN342P Rev. B

Typical Characteristics

FDN342P

20

VGS = -4.5V

-4.0V

15

10

5

, DRAIN-SOURCE CURRENT (A)

D

-I

0

012345

-3.5V

-3.0V

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-2.5V

-2.0V

2

1.8 VGS = -2.5V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE O N-RE S IS TANCE

-3.0V

-3.5V

-4.0V

0.8

0 4 8 12 16 20

, DRAIN CURRENT (A)

- I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.6 ID = -2.0A

V

= -4.5V

GS

1.4

1.2

1

, NORMALIZED

DS(ON)

R

0.8

DRAIN-SOURCE ON- RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMP E RATURE (oC)

J

0.3

0.2

0.1

, ON-RESISTANCE (OHM)

DS(ON)

R

0

12345

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

-4.5V

ID = -1A

Figure 3. On-Resistance Variation

with Temperature.

8

VDS = -5V

6

4

, DRAIN CURRE NT (A)

D

2

-I

0

0.4 1.4 2.4 3.4

, GATE TO SOURCE VOLTAG E (V)

-V

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V

SD

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDN342P Rev. B

Typical Characteristics (continued)

FDN342P

5

ID = -2A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

02468

, GATE CHARGE (nC)

Q

g

VDS = -5V

-10V

-15V

Figure 7. Gate Charge Characteristics.

100

R

10

, DRAIN CURRENT (A)

D

0.1

-I

0.01

LIMIT

1

DS(ON)

VGS = -4.5V

SINGLE PULSE

= 270oC/W

R

θJA

T

= 25oC

A

1s

10s

DC

1ms

10ms

100ms

0.1 1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

1000

800

C

600

400

CAPACITANCE (pF)

200

0

0 5 10 15 20

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

f = 1MHz

= 0 V

V

GS

Figure 8. Capacitance Characteristics.

20

16

12

8

POWER (W)

4

0

0.0001 0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=270oC/W

JA

θ

=25oC

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL R ESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0.1

0.05

0.02

0.01 Single Pulse

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R = 270 °C/W

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

JA

θ

JA

θ

1 2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

FDN342P Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™ E2CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™

UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.