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FDN338P
FDN338P
P-Channel 2.5V Specified PowerTrench MOSFET
September 2001
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
D
Features
• –1.6 A, –20 V. R
R
• Fast switching speed
• High performance trench technology for extremely
low R
• SuperSOTTM -3 provides low R
power handling capability than SOT23 in the same
footprint
DS(ON)
= 115 m Ω @ VGS = –4.5 V
DS(ON)
= 155 m Ω @ VGS = –2.5 V
DS(ON)
and 30% higher
DS(ON)
D
S
G
SuperSOT -3
TM
Absolute Maximum Ratings T
G
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous –1.6 A
– Pulsed –5
Maximum Power Dissipation (Note 1a) 0.5 PD
(Note 1b)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
±8
0.46
S
°C
V
W
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.338 FDN338P 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation FDN338P Rev F(W)
Page 2
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–20 V
–16
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –1.6 A
VGS = –2.5 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.6 A, TJ=125°C
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –5 A
D(on)
–0.4 –0.8 –1.5 V
2.7
88
117
116
115
155
165
mV/°C
m Ω
gFS Forward Transconductance VDS = –5 V, ID = –1.6 A 6 S
Dynamic Characteristics
C
Input Capacitance 451 pF
iss
C
Output Capacitance 75 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
33 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 10 20 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 16 29 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 4.4 6.2 nC
Qgs Gate–Source Charge 1.1 nC
Qgd Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –1.6 A,
VGS = –4.5 V
6.5 13 ns
0.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
θJC
a) 250°C/W when mounted on a
2
0.02 in
pad of 2 oz. copper.
θCA
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V
is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
FDN338P Rev F(W)
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= -4.5V
FDN338P
Typical Characteristics
5
VGS = -4.5V
-3.5V
4
3
2
, DRAIN CURRENT (A)
D
-I
1
0
0 0.5 1 1.5 2
-2.5V
-2.0V
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
2.2
2
VGS = -2.0V
1.8
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1 2 3 4 5
-2.5V
-3.0V
-ID, DRAIN CURRENT (A)
Drain Current and Gate Voltage.
-3.5V
-4.5V
1.8
ID = -1.6A
1.6
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
5
VDS = - 5V
4
3
2
, DRAIN CURRENT (A)
D
-I
1
TA = -55oC
125oC
25oC
0.34
0.3
0.26
0.22
0.18
, ON-RESISTANCE (OHM)
0.14
DS(ON)
0.1
R
0.06
ID = -0.8 A
TA = 125oC
TA = 25oC
1 2 3 4 5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0
0.5 0.75 1 1.25 1.5 1.75 2 2.25
-VGS, GATE TO SOURCE VOLTAGE (V)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN338P Rev F(W)
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P(pk)
0.02
0.05
FDN338P
Typical Characteristics
5
ID = -1.6A VDS = -5V
4
3
2
, GATE-SOURCE VOLTAGE (V)
1
GS
-V
0
0 1 2 3 4 5
Qg, GATE CHARGE (nC)
-10V
-15V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
600
500
400
300
200
100
0
0 2 4 6 8 10 12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C
COSS
C
ISS
RSS
f = 1MHz
VGS = 0 V
10
R
LIMIT
DS(ON)
1
VGS =-4.5V
0.1
SINGLE PULSE
, DRAIN CURRENT (A)
D
-I
R
= 270oC/W
θ
JA
TA = 25oC
0.01
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
100ms
1s
10s
DC
1ms
10ms
20
15
10
5
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.01
0.01
SINGLE PULSE
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
R
JA = 270 °C/W
θ
TJ - TA = P * R
Duty Cycle, D = t1 / t2
SINGLE PULSE
R
= 270°C/W
θ
JA
TA = 25°C
t
1
t2
θ
JA(t)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN338P Rev F(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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