Datasheet FDMS8692 Datasheet (Fairchild)

Download

Page 1

FDMS8692

N-Channel PowerTrench® MOSFET

30V, 28A, 9.0m:

Features

 Max r

 Advanced Package and Silicon combination for

low r

 MSL1 robust package design

 RoHS Compliant

= 9.0m:at VGS = 10V, ID = 12A

DS(on)

= 14.0m: at VGS = 4.5V, ID = 10.5A

DS(on)

and high efficiency

DS(on)

May 2009

General Description

The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

while maintaining excellent switching performance.

DS(on)

Applications

 Low Side for Synchronous Buck to Power Core Processor

 Secondary Side Synchronous Rectifier

 Low Side Switch in POL DC/DC Converter

 Oring FET/ Load Switch

FDMS8692 N-Channel PowerTrench

MOSFET

Top

Bottom

Pin 1

Power 56

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

TJ, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 28

-Continuous (Silicon limited) T

-Continuous TA= 25°C (Note 1a) 12

-Pulsed 120

Single Pulse Avalanche Energy (Note 3) 72 mJ

Power Dissipation TC = 25°C 41

Power Dissipation TA = 25°C (Note 1a) 2.5

Operating and Storage Junction Temperature Range -55 to +150 °C

TA= 25°C unless otherwise noted

= 25°C 48

Thermal Characteristics

TJC

TJA

Thermal Resistance, Junction to Case 3.0

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8692 FDMS8692 Power 56 13’’ 12mm 3000units

°C/W

www.fairchildsemi.com

Page 2

FDMS8692 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 30 V

Breakdown Voltage Temperature Coefficient

= 250PA, referenced to 25°C 20 mV/°C

Zero Gate Voltage Drain Current VDS = 24V, VGS= 0V 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1 1.8 3 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -5.4 mV/°C

= 10V, ID = 12A 7.0 9.0

= 4.5, ID = 10.5A 10.5 14.0

= 10V, ID = 12A, TJ = 125°C 10.0 13.0

Forward Transconductance VDD = 10V, ID = 12A 58 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 515 685 pF

Reverse Transfer Capacitance 85 130 pF

= 15V, VGS = 0V,

f = 1MHz

Gate Resistance f = 1MHz 1.0 2.8

950 1265 pF

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 310ns

Turn-Off Delay Time 19 34 ns

VDD = 15V, ID = 12A, V

= 10V, R

GEN

= 6:

918ns

Fall Time 210ns

Total Gate Charge VGS= 0V to 10V

Total Gate Charge VGS= 0V to 5V 8 11 nC

Gate to Source Charge 2.7 nC

VDD = 15V, I

= 12A

15 21 nC

Gate to Drain “Miller” Charge 2.1 nC

m:V

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 0.3mH, IAS = 22A, VDD = 30V, VGS = 10V.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 14 25 nC

= 0V, IS= 2.1A (Note 2) 0.7 1.2 V

= 0V, IS= 12A 0.8 1.2 V

= 12A, di/dt = 100A/Ps

a. 50°C/W when mounted on a

1in

pad of 2 oz copper.

29 47 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

www.fairchildsemi.com

Page 3

FDMS8692 N-Channel PowerTrench

Typical Characteristics T

120

100

, DRAIN CURRENT (A)

01234

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.8

1.6

On-Region Characteristics Figure 2.

ID = 12A V

= 10V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

VGS = 10V

VGS = 5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

VGS = 4.5V

VGS = 4V

VGS = 3.5V

3.5

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

3.0

VGS=3.5V

VGS = 4V

2.5

= 4.5V

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 020406080100120

, DRAIN CURRENT(A)

VGS = 5V

=10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

ID= 12A

(m:)

, DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

120

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

100

= 5V

, DRAIN CURRENT (A)

123456

TJ= 150oC

TJ = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = -55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

300

= 0V

100

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDMS8692 N-Channel PowerTrench

Typical Characteristics T

ID= 12A

= 10V

, GATE TO SOURCE VOLTAGE(V)

0481216

Figure 7.

, AVALANCHE CURRENT(A)

0.01 0.1 1 10 100

Figure 9.

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

TJ= 125oC

tAV, TI ME IN AVALANCHE (ms)

U n c l a m p e d I n d u c t i v e

Switching Capability

= 25°C unless otherwise noted

VDD = 15V

VDD = 20V

TJ= 25oC

2000

iss

oss

rss

CAPACITANCE (pF)

1000

100

f = 1MHz

= 0V

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

VGS= 10V

Limited by Package

, DRAIN CURRENT (A)

= 3oC/W

TJC

25 50 75 100 125 150

, CASE TEMPERATURE (

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

= 4.5V

Current vs Case Temperature

MOSFET

100

THIS AREA IS LIMITED BY r

, DRAIN CURRENT (A)

0.1

0.01

0.01 0.1 1 10 100

DS(on)

SINGLE PULSE T

= MAX RATED

= 125oC/W

TJA

= 25oC

VDS, DRAIN to S OURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

1ms

10ms

100ms

10s

200

100

VGS = 10V

SINGLE PULSE

= 125oC/W

TJA

= 25oC

, PEAK TRANSIENT POWER (W)

)

0.5

-3

10-210

Figure 12.

-1

t, PULSE WIDTH (s)

S i n g l e P u l s e M a x i m u m

Power Dissipation

www.fairchildsemi.com

Page 5

FDMS8692 N-Channel PowerTrench

Typical Characteristics T

TJA

0.1

IMPEDANCE, Z

0.01

NORMALIZED THERMAL

0.001

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-3

SINGLE PULSE

TJA

-2

= 25°C unless otherwise noted

= 125oC/W

-1

t, RECTANGULAR PULSE DURATION (s)

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

x R

+ T

TJA

MOSFET

www.fairchildsemi.com

Page 6

Dimensional Outline and Pad Layout

FDMS8692 N-Channel PowerTrench

MOSFET

FDMS8692 RevC4

www.fairchildsemi.com

Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™

MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

PSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

FDMS8692 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com

Rev. I40

Page 8