Page 1
May 2009
FDMS8670S N-Channel PowerTrench
FDMS8670S
N-Channel PowerTrench
30V, 42A, 3.5m:
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
= 3.5m: at VGS = 10V, ID = 20A
DS(on)
= 5.0m: at VGS = 4.5V, ID = 17A
DS(on)
Top
Bottom
®
SyncFET
General Description
The FDMS8670S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
S
S
S
G
TM
tm
while maintaining excellent switching performance. This
G
5
D
6
D
4
S
3
®
SyncFET
TM
D
D
D
D
D
7
8
D
2
1
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C 42
-Continuous (Silicon limited) T
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Power Dissipation TC = 25°C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
= 25°C 116
C
= 100°C 74
C
= 25°C 20
A
= 25°C (Note 1a) 2.5
A
= 85°C (Note 1a) 1.3
A
Thermal Characteristics
R
TJC
R
TJA
Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
S
S
A
WPower Dissipation T
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8670S FDMS8670S Power 56 13’’ 12mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS8670S Rev.C5
1
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Page 2
FDMS8670S N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
= 10mA, referenced to 25°C 17 mV/°C
I
D
Zero Gate Voltage Drain Current VDS = 24V, VGS= 0V 500 PA
Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1mA 1 1.5 3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
= 50mA, referenced to 25°C -2.8 mV/°C
I
D
V
= 10V, ID = 20A 2.8 3.5
GS
= 4.5V, ID = 17A 3.6 5.0
GS
= 10V, ID = 20A ,TJ = 125°C 3.9 6.0
V
GS
Forward Transconductance VDS = 10V, ID = 20A 98 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 865 1150 pF
Reverse Transfer Capacitance 320 480 pF
= 15V, VGS = 0V
V
DS
f = 1MHz
Gate Resistance f = 1MHz 1.4 5.0 :
3005 4000 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(4.5V)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 19 35 ns
Turn-Off Delay Time 37 60 ns
VDD = 15V, ID = 20A
V
= 10V, R
GS
GEN
= 5:
14 26 ns
Fall Time 10 20 ns
Total Gate Charge at 10V VGS= 0V to 10V
Total Gate Charge at 4.5V VGS= 0V to 4.5V 24 34 nC
Gate to Source Gate Charge 8 nC
V
DS
= 20A
I
D
= 15V
52 73 nC
Gate to Drain “Miller” Charge 10 nC
m:V
®
SyncFET
TM
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
the user's board design.
2: Pulse time < 300Ps, Duty cycle < 2%.
FDMS8670S Rev.C5
Source to Drain Diode Forward Voltage VGS= 0V, IS= 2A 0.4 0.7 V
Reverse Recovery Time
Reverse Recovery Charge 24 39 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
I
F
a. 50°C/W when mounted on
a 1 in2pad of 2 oz copper
= 20A, di/dt = 300A/Ps
2
26 42 ns
is guaranteed by design while R
TJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
is determined by
TCA
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Page 3
FDMS8670S N-Channel PowerTrench
Typical Characteristics T
180
150
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
01234
Figure 1.
1.8
ID = 20A
V
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-75 -50 -25 0 25 50 75 100 125 150
VGS = 10V
VGS = 4.5V
VGS = 4V
VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
= 10V
GS
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 3.5V
VGS = 3V
4.0
3.5
3.0
2.5
2.0
NORMALIZED
1.5
1.0
0.5
DRAIN TO SOURCE ON-RESISTANCE
0 30 60 90 120 150 180
VGS = 3V
ID, DRAIN CURRENT(A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 3.5V
VGS = 4.5V
VGS = 10V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
10
ID= 20A
(m:)
8
6
, DRAIN TO
4
DS(on)
r
TJ= 25oC
SOURCE ON-RESISTANCE
2
345678910
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
VGS = 4V
®
SyncFET
TM
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
150
120
90
60
30
, DRAIN CURRENT (A)
D
I
0
Figure 5. Transfer Characteristics
FDMS8670S Rev.C5
vs Junction Temperature
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
, REVERSE DRAIN CURRENT (A)
I
3
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
20
10
VGS= 0V
1
TJ= 125oC
TJ = 25oC
0.1
0.01
S
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
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Page 4
FDMS8670S N-Channel PowerTrench
Typical Characteristics T
10
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 102030405060
Figure 7.
40
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100 1000
VDD= 10V
VDD = 15V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ= 125oC
tAV, TIME IN AVALANCHE(ms)
= 25°C unless otherwise noted
J
VDD = 20V
TJ= 25oC
5000
C
iss
1000
C
oss
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
100
0.1 1 10
C
rss
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
120
100
80
60
V
GS
40
, DRAIN CURRENT (A)
D
I
20
R
= 1.6oC/W
TJC
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
V
= 10V
GS
= 4.5V
Limited by Package
30
®
SyncFET
TM
300
100
10
1
0.1
, DRAIN CURRENT (A)
D
I
0.01
1E-3
FDMS8670S Rev.C5
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
100us
1ms
10ms
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
= MAX RATED
J
= 25OC
T
A
1s
10s
DC
0.1 1 10
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
500
100
VGS = 10V
10
), PEAK TRANSIENT POWER (W)
1
PK
0.6
P(
80
-3
10
SINGLE PULSE
10-210
t, PULSE WIDTH (s)
Figure 12.
S i n g l e P u l s e M a x i m u m
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
-1
10010
150 TA–
-----------------------
125
1
TA = 25oC
2
10
3
10
Power Dissipation
4
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Page 5
FDMS8670S N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.01
1E-3
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
10
-2
10
TJA
IMPEDANCE, Z
NORMALIZED THERMAL
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
2
x R
+ T
TJA
TJA
A
2
10
3
10
®
SyncFET
TM
FDMS8670S Rev.C5
5
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Page 6
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
FDMS8670S N-Channel PowerTrench
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8670S.
CURRENT: 0.8A/Div
TIME: 12.5nS/Div
Figure 14. FDMS8670S SyncFET Body
Diode reverse recovery characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
0.1
0.1
0.1
TA= 125oC
TJ = 125oC
0.01
0.01
0.01
1E-3
1E-3
1E-3
1E-4
1E-4
1E-4
, REVERSE LEAKAGE CURRENT (A)
1E-5
, REVERSE LEAKAGE CURRENT (A)
1E-5
DSS
1E-5
0 5 10 15 20 25 30
0 5 10 15 20 25 30
I
IDSS, REVERSE LEAKAGE CURRENT (A)
DSS
I
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
VDS, REVERSE VOLTAGE (V)
VDS, REVERSE VOLTAGE (V)
TJ = 125oC
TJ = 100oC
TA= 100oC
TJ = 100oC
TJ = 25oC
TJ = 25oC
TA= 25oC
Figure 15. SyncFET Body Diode reverse
leakage vs drain to source voltage
®
SyncFET
TM
FDMS8670S Rev.C5
6
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Page 7
Dimensional Outline and Pad Layout
FDMS8670S N-Channel PowerTrench
®
SyncFET
TM
FDMS8670S Rev.C5
7
www.fairchildsemi.com
Page 8
TRADEMARKS
t
®
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
m
®
®
®
®
*
®
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
PDP SPM™
Power-SPM™
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
®
t
®
®
PSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS8670S N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
FDMS8670S Rev. C5
8
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