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tm
FDMS8660S
N-Channel PowerTrench® SyncFET
30V, 40A, 2.4mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
= 2.4mΩ at VGS = 10V, ID = 25A
DS(on)
= 3.5mΩ at VGS = 4.5V, ID = 21A
DS(on)
DS(on)
General Description
The FDMS8660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest r
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
TM
while maintaining excellent switching
DS(on)
FDMS8660S N-Channel PowerTrench
June 2008
®
SyncFET
TM
Pin 1
S
D
D
D
D
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 40
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 937 mJ
Power Dissipation TC = 25°C 83
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
S
G
Power 56 (Bottom view)
= 25°C unless otherwise noted
A
D
5
D
6
D
7
D
8
= 25°C 147
C
= 25°C (Note 1a) 25
A
= 25°C (Note 1a) 2.5
A
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8660S FDMS8660S Power 56 13’’ 12mm 3000 units
©2008 Fairchild Semiconductor Corporation
FDMS8660S Rev C3
°C/W
1
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Page 2
FDMS8660S N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 10mA, referenced to 25°C 21 mV/°C
= 0V 500 µA
GS
= 0V ±100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1mA 1 1.5 2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 25A 123 S
ID = 10mA, referenced to 25°C -4 mV/°C
VGS = 10V, ID = 25A 1.9 2.4
VGS = 10V, ID = 25A ,TJ = 125°C 2.9 3.9
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1215 pF
Reverse Transfer Capacitance 425 pF
VDS = 15V, VGS = 0V,
f = 1MHz
4345 pF
Gate Resistance f = 1MHz 1.0 1.75 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(4.5V)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 12 22 ns
Turn-Off Delay Time 76 122 ns
VDD = 15V, ID = 1A
VGS = 10V, R
GEN
= 6Ω
17 31 ns
Fall Time 50 80 ns
Total Gate Charge at 10V V
Total Gate Charge at 4.5V V
Gate to Source Gate Charge 11 nC
= 0V to 10V
GS
= 0V to 4.5V 44 62 nC
GS
VDS = 15V
81 113 nC
ID = 25A
Gate to Drain “Miller” Charge 16 nC
mΩVGS = 4.5V, ID = 21A 2.6 3.5
®
SyncFET
TM
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
the user's board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
FDMS8660S Rev C3
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 98 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25°C, L = 3mH, IAS = 25A, VDD = 30V, VGS = 10V.
J
IF = 25A, di/dt = 300A/µs
a. 50°C/W when mounted on
2
pad of 2 oz copper
a 1 i n
Scale 1 : 1 on letter size paper
= 0V, IS = 2.2A (Note 2) 0.37 0.70 V
GS
35 ns
is guaranteed by design while R
θJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2
is determined by
θCA
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Page 3
FDMS8660S N-Channel PowerTrench
Typical Characteristics T
120
PULSE DURATION = 300µs
100
80
60
VGS = 10V
VGS = 6.0V
VGS = 4.5V
VGS = 3.5V
40
, DRAIN CURRENT (A)
D
20
I
0
0.0 0.4 0.8 1.2 1.6 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
1.6
1.4
On-Region Characteristics Figure 2.
ID = 25A
V
= 10V
GS
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
DUTY CYCLE = 2%MAX
= 25°C unless otherwise noted
J
VGS = 3.0V
4.0
V
3.5
GS
= 3.0V
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
3.0
V
= 3.5V
NORMALIZED
2.5
2.0
V
= 10V
1.5
GS
VGS = 6V
GS
V
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 20406080100120
ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
8
7
(mΩ)
ID = 25A
6
5
4
, DRAIN TO
3
DS(on)
r
2
SOURCE ON-RESISTANCE
TJ = 25oC
1
2345678910
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
TJ = 125oC
Source Voltage
GS
= 4.5V
®
SyncFET
TM
90
80
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
1.0 1.5 2.0 2.5 3.0 3.5
Figure 5. Transfer Characteristics
FDMS8660S Rev C3
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
TJ = 125oC
TJ = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55oC
10
V
= 0V
GS
1
TJ = 125oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDMS8660S N-Channel PowerTrench
Typical Characteristics T
10
ID = 25A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 102030405060708090
Qg, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics Figure 8.
60
10
V
DS
= 25°C unless otherwise noted
J
= 10V
VDS = 15V
VDS = 20V
TJ = 100oC
4
10
3
10
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
2
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
80
70
60
50
40
V
= 10V
GS
V
= 4.5V
GS
C
iss
C
oss
C
rss
30
®
SyncFET
TM
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
TJ = 25oC
Switching Capability
1000
100
10
OPERATION IN THIS
1
AREA MAY BE
LIMITED BY r
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 25OC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
1ms
10ms
100ms
1s
10s
DC
3000
30
, DRAIN CURRENT (A)
D
I
20
R
θJC
10
25 50 75 100 125 150
Limited by Package
= 1.5oC/W
TC, CASE TEMPERATURE (oC)
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
), PEAK TRANSIENT POWER (W)
P(
3000
1000
PK
100
10
0.1
1
10
Figure 12.
-3
VGS = 10V
SINGLE PULSE
10-210
t, PULSE WIDTH (s)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
-1
0
10
10
150 TA–
-----------------------
125
1
S i n g l e P u l s e M a x i m u m
Power Dissipation
TA = 25oC
2
10
3
10
FDMS8660S Rev C3
4
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Page 5
FDMS8660S N-Channel PowerTrench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDI NG ORDER
D = 0.5
0.2
0.1
θJA
0.01
IMPEDANCE, Z
1E-3
NORMALIZED THERMAL
1E-4
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
10
-2
10
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
®
SyncFET
TM
FDMS8660S Rev C3
5
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Page 6
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
FDMS8660S N-Channel PowerTrench
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8660S.
CURRENT : 0.8A/DIV
TIME : 12.5 nS/Div
Figure 14. FDMS8660S SyncFET body
diode reverse recovery characteristic
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
0.1
0.01
1E-3
1E-4
, REVERSE LEAKAGE CURRENT (A)
1E-5
DSS
0 5 10 15 20 25 30
I
VDS, REVERSE VOLTAGE (V)
TJ = 125oC
TJ = 100oC
TJ = 25oC
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
®
SyncFET
TM
FDMS8660S Rev C3
6
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Page 7
FDMS8660S N-Channel PowerTrench
®
SyncFET
TM
FDMS8660S Rev C3
7
www.fairchildsemi.com
Page 8
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
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FACT
FAST
FastvCore™
FlashWriter
* EZSWITCH™ and FlashWriter
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
®
®
®
®
®
*
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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®
FRFET
Global Power Resource
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Green FPS™ e-Series™
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MicroPak™
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Motion-SPM™
OPTOLOGIC
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Power-SPM™
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QS™
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Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
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FDMS8660S N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
FDMS8660S Rev C3
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