Page 1
FDMS86540
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
D
D
D
D
S
S
S
G
N-Channel PowerTrench® MOSFET
60 V, 50 A, 3.4 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 3.4 mΩ at VGS = 10 V, ID = 20 A
DS(on)
= 4.1 mΩ at VGS = 8 V, ID = 18.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
December 2011
, fast switching speed and body
DS(on)
FDMS86540 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 120
Single Pulse Avalanche Energy (Note 3) 228 mJ
Power Dissipation TC = 25 °C 96
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 126
C
= 25 °C (Note 1a) 20
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.3
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
FDMS86540 FDMS86540 Power 56 13 ’’ 12 mm 3000 units
1
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Page 2
FDMS86540 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 28 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA23.24V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 20 A 2.7 3.4
GS
= 8 V, ID = 18.5 A 3.1 4.1
GS
= 10 V, ID = 20 A, TJ = 125 °C 3.8 4.8
V
GS
Forward Transconductance VDS = 10 V, ID = 20 A 73 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1413 1880 pF
Reverse Transfer Capacitance 50 90 pF
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.0 Ω
4837 6435 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 16 29 ns
Turn-Off Delay Time 32 52 ns
= 30 V, ID = 20 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
28 45 ns
Fall Time 7.2 15 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 8 V 53 75 nC
Gate to Source Charge 23 nC
V
DD
I
= 20 A
D
= 30 V,
65 90 nC
Gate to Drain “Miller” Charge 12 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 ma terial . R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 41 66 nC
Reverse Recovery Time
Reverse Recovery Charge 76 122 nC
a)
50 °C/W when mounted on a
1 in
SF
SS
DF
DS
G
2
pad of 2 oz copper
V
= 0 V, IS = 2.1 A (Note 2) 0.70 1.2
GS
= 0 V, IS = 20 A (Note 2) 0.79 1.3
V
GS
= 20 A, di/dt = 100 A/μs
I
F
= 20 A, di/dt = 300 A/μs
I
F
2
θJC
SF
SS
DF
DS
G
55 88 ns
44 70 ns
is guaranteed by design while R
125 °C/W when mounted on a
b)
minimum pad of 2 oz copper.
V
is determined by
θCA
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Page 3
FDMS86540 N-Channel PowerTrench
012345
0
30
60
90
120
VGS = 8 V
VGS = 6 V
VGS = 10 V
VGS = 5 V
VGS = 5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 306090120
0
2
4
6
8
V
GS
= 8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
VGS = 5.5 V
VGS = 5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
ID = 20 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TE MPERATURE (
o
C)
45678910
0
3
6
9
12
15
TJ = 125 oC
ID = 20 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
234567
0
30
60
90
120
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0 .2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor ma liz ed O n-R esist anc e
vs Drain Current and Gate Voltage
®
MOSFET
Figur e 3 . No rm alize d On- R es ist an ce
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate t o
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS86540 N-Channel PowerTrench
0 10203040506070
0
2
4
6
8
10
ID = 20 A
VDD = 20 V
V
DD
= 30 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 40 V
0.1 1 10 60
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VO LTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100 300
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
20
40
60
80
100
120
140
Limited by Package
V
GS
= 8 V
R
θJC
= 1.3 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100 300
0.01
0.1
1
10
100
200
10 s
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-310
-2
10
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Cap aci tan ce v s Dr a in
to Source Voltage
®
MOSFET
Figure 9.
Unc l amp e d In duc t ive
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Figure 11.
Forward Bias Safe
Operating Area
Figure 10.
Ma ximum Cont in uo us Drain
Current vs Case Temperature
Fi gure 12. Single P ulse Maxim um
Power Dissipation
4
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Page 5
FDMS86540 N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
5
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Page 6
FDMS86540 N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
6
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Page 7
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tm
®
™
tm
tm
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intended to be an exhaustive list of all such trademarks.
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Saving our world, 1mW/W/kW at a time™
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®*
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Ultra FRFET™
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®
®
®
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FDMS86540 N-Channel PowerTrench
®
MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The data sheet is for reference information only.
Rev. I60
7
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