Page 1
FDMS86322
G
S
S
S
Pin 1
Bottom
Top
Power 56
N-Channel PowerTrench® MOSFET
80 V, 60 A, 7.65 m:
FDMS86322 N-Channel PowerTrench
October 2010
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 7.65 m: at VGS = 10 V, ID = 13 A
DS(on)
= 12 m: at VGS = 6 V, ID = 7.2 A
DS(on)
D
D
D
D
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
®
process thant has
Application
DC-DC Conversion
D
5
D
6
D
7
8
D
G
4
S
3
S
2
S
1
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 60
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 135 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
A
Thermal Characteristics
R
TJC
R
TJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86322 FDMS86322 Power 56 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMS86322 RevC
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
= 25 °C 83
C
= 25 °C (Note 1a) 13
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
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Page 2
FDMS86322 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 80 V
Breakdown Voltage Temperature
Coefficient
I
= 250 PA, referenced to 25 °C 66 mV/°C
D
Zero Gate Voltage Drain Current VDS = 64 V, VGS= 0 V 800 nA
Gate to Source Leakage Current, Forward VGS = ±20 V, VDS= 0 V 100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2.0 2.9 4.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 PA, referenced to 25 °C -9 mV/°C
D
V
= 10 V, ID = 13 A 6.1 7.65
GS
= 6 V, ID = 7.2 A 8.2 12
GS
= 10 V, ID = 13 A, TJ= 125 °C 10.7 14
V
GS
Forward Transconductance VDS = 10 V, ID = 13 A 45 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 460 610 pF
Reverse Transfer Capacitance 30 45 pF
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.0 :
2255 3000 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 27 44 ns
= 50 V, ID = 13 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 :
Fall Time 713ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 22 31 nC
Gate to Source Charge 9.5 nC
V
DD
I
= 13 A
D
= 50 V,
Gate to Drain “Miller” Charge 10.8 nC
15 27 ns
39 55 nC
m:V
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting T
FDMS86322 RevC
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 61 98 nC
= 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V
J
V
= 0 V, IS= 2.1 A (Note 2) 0.7 1.2
GS
= 0 V, IS= 13 A (Note 2) 0.8 1.3
V
GS
= 13 A, di/dt = 100 A/Ps
I
F
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
V
56 90 ns
is guaranteed by design while R
TJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
is determined by
TCA
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Page 3
FDMS86322 N-Channel PowerTrench
012345
0
50
100
150
200
VGS = 6 V
VGS = 10 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 5 V
VGS = 5.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 50 100 150 200
0
1
2
3
4
5
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 13 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
46810
0
10
20
30
40
:
12345678
0
50
100
150
200
VDS= 5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
TJ= 150 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ= 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
VGS = 4.5 V
V
=5 V
GS
VGS = 5.5 V
NORMALIZED
PULSE DURATION = 80 Ps
DRAIN TO SOURCE ON-RESISTANCE
DUTY CYCLE = 0.5% MAX
I
, DRAIN CURRENT (A)
D
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
)
(m
ID= 13 A
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5% MAX
V
=6 V
GS
V
= 10 V
GS
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
FDMS86322 RevC
Figure 5. Transfer Characteristics
DRAIN TO
,
DS(on)
r
SOURCE ON-RESISTANCE
Figure 4.
V
, GATE TO SOURCE VOLTAGE (V)
GS
O n - R es i s t a n c e vs G a t e t o
TJ= 125 oC
TJ= 25 oC
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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Page 4
FDMS86322 N-Channel PowerTrench
0 10203040
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
V
GS
, GATE TO SOURCE VOLTAGE (V)
ID= 13 A
VDD = 50 V
VDD= 25 V
VDD = 75 V
0.1 1 10 80
10
100
1000
10000
0.001 0.01 0.1 1 10 100
1
25 50 75 100 125 150
0
15
30
45
60
75
90
Limited by Package
R
TJC
= 1.2 oC/W
VGS= 6 V
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
c
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100 400
0.01
0.1
1
10
100
300
T
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
R
TJA
= 125 oC/W
T
A
= 25 oC
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH ( sec)
Typical Characteristics T
Figure 7.
100
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
TJ= 25 oC
C
iss
C
oss
C
CAPACITANCE (pF)
f = 1 MHz
V
= 0 V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
rss
®
C a p a c i t a n c e v s D r a i n
to Source Voltage
MOSFET
10
, AVALANCHE CURRENT (A)
AS
I
Figure 9.
tAV, TIME IN AVALANCHE (ms)
U n c l a m p e d I n d u c t i v e
TJ= 125 oC
Switching Capability
THIS AREA IS
LIMITED BY r
, DRAIN CURRENT (A)
D
I
FDMS86322 RevC
F ig u re 1 1. F or w ar d B ia s Sa f e
DS(on)
SINGLE PULSE
= MAX RATED
T
J
R
= 125 oC/W
JA
= 25 oC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
Op
erating Area
TJ= 100 oC
1 ms
10 ms
100 ms
1 s
10 s
DC
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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Page 5
FDMS86322 N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.0005
0.001
0.01
0.1
1
2
T
T
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
TJA
x R
TJA
+ T
A
Typical Characteristics T
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
JA
IMPEDANCE, Z
NORMALIZED THERMAL
0.1
0.05
0.02
0.01
SINGLE PULSE
R
= 125 oC/W
JA
Figure 13.
= 25 °C unless otherwise noted
J
t, RECTANGULAR PULSE DURATION (sec)
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
FDMS86322 RevC
5
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Page 6
Dimensional Outline and Pad Layout
FDMS86322 N-Channel PowerTrench
®
MOSFET
FDMS86322 RevC
6
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Page 7
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t
®
tm
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intended to be an exhaustive list of all such trademarks.
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Auto-SPM™
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DEUXPEED
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FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
m
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
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PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
®
®
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise
®
TinyBoost™
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TINYOPTO™
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TriFault Detect™
TRUECURRENT™*
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®
UHC
Ultra FRFET™
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®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS86322 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS86322 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I48
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