Page 1
FDMS86320
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
D
D
D
D
S
S
S
G
N-Channel PowerTrench® MOSFET
80 V, 22 A, 11.7 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL Tested
RoHS Compliant
= 11.7 mΩ at VGS = 10 V, ID = 10.5 A
DS(on)
= 15 mΩ at VGS = 8 V, ID = 8.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
Primary DC-DC Switch
Motor Bridge Switch
Synchronous Rectifier
December 2011
, fast switching speed and body
DS(on)
FDMS86320 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 60 mJ
Power Dissipation TC = 25 °C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 57
C
= 25 °C (Note 1a) 10.5
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86320 FDMS86320 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86320 Rev.C
1
www.fairchildsemi.com
Page 2
FDMS86320 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 51 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.4 3.5 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -10 mV/°C
D
V
= 10 V, ID = 10.5 A 9.6 11.7
GS
= 8 V, ID = 8.5 A 11 15
GS
= 10 V , ID = 10.5 A, TJ = 125 °C 15 19
V
GS
Forward Transconductance VDS = 10 V, ID = 10.5 A 23 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 353 469 pF
Reverse Transfer Capacitance 12 30 pF
Gate Resistance 0.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g(TOT)
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 816ns
Turn-Off Delay Time 20 35 ns
Fall Time 510ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 10 nC
Gate to Drain “Miller” Charge 6.9 nC
= 40 V, VGS = 0 V,
V
DS
f = 1 MHz
= 40 V, ID = 10.5 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 8 V 24 34 nC
GS
= 6 Ω
GEN
VDD = 40 V,
I
D
= 10.5 A
1985 2640 pF
15 28 ns
29 41 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
FDMS86320 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 27 43 nC
SF
SS
DF
DS
G
= 25 °C; N-ch: L = 0.3 mH, IAS = 20 A, VDD = 72 V, VGS = 10 V.
J
a)
50 °C/W when mounted on a
2
pad of 2 oz copper
1 in
V
= 0 V, IS = 10.5 A (Note 2) 0.84 1.3
GS
= 0 V, IS = 2 A (Note 2) 0.75 1.2
V
GS
= 10.5 A, di/dt = 100 A/μs
I
F
SS
SF
DF
DS
G
2
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
38 61 ns
is guaranteed by design while R
V
is determined by
θCA
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Page 3
FDMS86320 N-Channel PowerTrench
012345
0
10
20
30
40
50
VGS = 6.5 V
VGS = 7 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 8 V
VGS = 6 V
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0 1020304050
0
1
2
3
4
5
VGS = 6 V
VGS = 7 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 8 V
VGS = 6.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 10.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
5678910
0
10
20
30
40
TJ = 125 oC
ID = 10.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE V OLTAGE (V )
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
345678
0
10
20
30
40
50
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.20.40.60.81.01.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor mal ize d On-R esi sta nce
vs Drain Current and Gate Voltage
®
MOSFET
Figure 3. N or malized On Re sistanc e
vs Junction Temperature
FDMS86320 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resist ance vs Gate to
Source Voltage
Figure 6.
Source to D rain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS86320 N-Channel PowerTrench
0 5 10 15 20 25 30
0
2
4
6
8
10
ID = 10.5 A
VDD = 40 V
V
DD
= 30 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
0.1 1 10 100
5
10
100
1000
3000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
50
60
Limited by Package
V
GS
= 8 V
R
θJC
= 1.8 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100 500
0.01
0.1
1
10
100
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Cap aci t anc e vs Dra in
to Source Voltage
®
MOSFET
Figure 9.
Unc l amp e d In d uct i ve
Switching Capability
FDMS86320 Rev.C
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma ximum Contin uo us Drain
Current vs Case Temperature
Figure 12.
Single P ulse Maximum
Power Dissipation
4
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Page 5
FDMS86320 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
FDMS86320 Rev.C
5
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Page 6
FDMS86320 N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
FDMS86320 Rev.C
6
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Page 7
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tm
®
™
tm
tm
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intended to be an exhaustive list of all such trademarks.
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®*
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Ultra FRFET™
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VCX™
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XS™
®
®
®
*
FDMS86320 N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manu factures of semiconductor products are experie ncing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect our selve s and our customers from the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS86320 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discont inued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I60
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