Page 1
FDMS86300
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
80 V, 42 A, 3.9 mΩ
FDMS86300 N-Channel PowerTrench
August 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 3.9 mΩ at VGS = 10 V, ID = 19 A
DS(on)
= 5.5 mΩ at VGS = 8 V, ID = 15.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
, fast switching speed and body
DS(on)
Applications
OringFET / Load Switching
DC-DC Conversion
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 120
Single Pulse Avalanche Energy (Note 3) 252 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 122
C
= 25 °C (Note 1a) 19
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
FDMS86300 FDMS86300 Power 56 13 ’’ 12 mm 3000 units
1
www.fairchildsemi.com
Page 2
FDMS86300 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 39 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.4 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 19 A 3.2 3.9
GS
= 8 V, ID = 15.5 A 3.8 5.5
GS
= 10 V, ID = 19 A, TJ = 125 °C 5.0 5.8
V
GS
Forward Transconductance VDS = 10 V, ID = 19 A 60 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 957 1272 pF
Reverse Transfer Capacitance 26 63 pF
= 40 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.2 Ω
5325 7082 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 26 43 ns
Turn-Off Delay Time 36 58 ns
= 40 V, ID = 19 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 918ns
g
g
gs
gd
To tal Gate Charge VGS = 0 V to 10 V
To tal Gate Charge VGS = 0 V to 8 V 59 71 nC
Gate to Source Charge 28.2 nC
V
DD
I
= 19 A
D
= 40 V,
Gate to Drain “Miller” Charge 14.9 nC
31 50 ns
72 86 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 252 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 41 A, VDD = 72 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 50 80 nC
Reverse Recovery Time
Reverse Recovery Charge 103 165 nC
a)
50 °C/W when mounted on a
2
1 in
pad of 2 oz copper
GS
V
GS
= 19 A, di/dt = 100 A/μs
I
F
= 19 A, di/dt = 300 A/μs
I
F
= 0 V, IS = 2.1 A (Note 2) 0.71 1.2
= 0 V, IS = 19 A (Note 2) 0.81 1.3
57 90 ns
48 77 ns
is guaranteed by design while R
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
θCA
www.fairchildsemi.com
V
is determined by
Page 3
FDMS86300 N-Channel PowerTrench
012345
0
30
60
90
120
VGS = 6.5 V
VGS = 10 V
VGS = 5.5 V
VGS = 6 V
VGS = 8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRA IN T O SOURCE VOLTAGE (V)
0306090120
0
1
2
3
4
5
VGS = 6.5 V
VGS = 5.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 8 V
VGS = 6 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 19 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
5678910
0
3
6
9
12
TJ = 125 oC
ID = 19 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
234567
0
30
60
90
120
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0 .2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norm a l i z e d O n -Resista n c e
vs Drain Current and Gate Voltage
®
MOSFET
Fig u r e 3. Nor m a lized O n - Resi s t ance
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Ga te to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDMS86300 N-Channel PowerTrench
0 1020304050607080
0
2
4
6
8
10
ID = 19 A
VDD = 30 V
V
DD
= 40 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
0.1 1 10 80
1
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100 500
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
30
60
90
120
150
Limited by Package
V
GS
= 8 V
R
θJC
= 1.2 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100 500
0.01
0.1
1
10
100
200
10 s
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Capacitance vs Drain
to Source Voltage
®
MOSFET
Figure 9.
Uncl a m p e d I n duct i v e
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Figure 11.
Operating Area
Forward Bias Safe
Figure 10.
Ma x imum C ont i nuous Drai n
Current vs Case Temperature
Fi gure 12. S ingle Pul se Maximu m
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDMS86300 N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
5
www.fairchildsemi.com
Page 6
FDMS86300 N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
6
www.fairchildsemi.com
Page 7
TRADEMARKS
tm
®
tm
™
tm
The following includes registered and unregistered trademarks and service marks, owned b y Fairchild Semiconductor and /or its gl obal subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
®
FlashWriter
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
*
®
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
SM
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
®
®
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®*
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
®
®
*
FDMS86300 N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or ( b) su pport or susta in life ,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industr y. All manufactures of semicondu ctor products are experiencing counter feiting of their
parts. Customers who inadvertently purchase counterfeit parts experi ence ma ny pro blems such as lo ss of brand r eput ation, substa ndard per formance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measur es to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly en courages custo mers to purchase Fairchild parts either dir ectly from Fairchild or from Auth orized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct o r from authorized distr ibutors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDMS86300 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
www.fairchildsemi.com
Rev. I55
Loading...