Page 1
FDMS86250
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
D
D
D
D
S
S
S
G
N-Channel PowerTrench® MOSFET
150 V, 20 A, 25 mΩ
FDMS86250 N-Channel PowerTrench
December 2011
Features
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 25 mΩ at VGS = 10 V, ID = 6.7 A
DS(on)
= 33 mΩ at VGS = 6 V, ID = 5.8 A
DS(on)
DS(on)
and
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
®
process that has
Application
DC-DC Conversion
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 20
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 180 mJ
Power Dissipation TC = 25 °C 96
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 42
C
= 25 °C (Note 1a) 6.7
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86250 FDMS86250 Power 56 13 ’’ 12
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Thermal Resistance, Junction to Case 1.3
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
mm 3000 units
°C/W
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Page 2
FDMS86250 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V150 V
D
I
= 250 μA, referenced to 25 °C 106 mV/°C
D
= 120 V, V
DS
= ±20 V, V
GS
= 0 V1μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 6.7 A 19 25
GS
= 6 V, ID = 5.8 A2333
GS
= 10 V, ID = 6.7 A, T
V
GS
= 10 V, ID = 6.7 A24S
DS
= 250 μA 2.0 2.9 4.0 V
D
= 125 °C 35 46
J
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 165 220 pF
Reverse Transfer Capacitance 8.8 15 pF
Gate Resistance 0.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 4.3 10 ns
Turn-Off Delay Time 22 35 ns
Fall Time 4.2 10 ns
To tal Gate Charge V
To tal Gate Charge V
Gate to Source Charge 7.4 nC
Gate to Drain “Miller” Charge 5.5 nC
= 75 V, VGS = 0 V,
V
DS
f = 1 MHz
= 75 V, ID = 6.7 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V1420nC
GS
GEN
= 6 Ω
V
DD
I
D
= 75 V,
= 6.7 A
1750 2330 pF
14 25 ns
25 36 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 112 180 nC
SF
SS
DS
DF
G
V
GS
V
GS
= 6.7 A, di/dt = 100 A/μs
I
F
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
= 0 V, IS = 2 A (Note 2) 0.72 1.2
= 0 V, IS = 6.7 A (Note 2) 0.78 1.3
73 117 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
2
θCA
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V
is determined by
Page 3
FDMS86250 N-Channel PowerTrench
012345
0
10
20
30
40
50
VGS = 5 V
VGS = 10 V
VGS = 5.5 V
VGS = 6 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
1
2
3
4
VGS = 4.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 5 V
VGS = 5.5 V
VGS = 6 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 6.7 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TE MPERA TURE (
o
C)
45678910
0
20
40
60
80
TJ = 125 oC
ID = 6.7 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23456
0
10
20
30
40
50
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor ma liz ed O n-Res ist anc e
vs Drain Current and Gate Voltage
®
MOSFET
Figur e 3 . Norm alize d O n- Res is tance
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS86250 N-Channel PowerTrench
0 4 8 12 16 20 24 28
0
2
4
6
8
10
ID = 6.7 A
VDD = 50 V
V
DD
=75 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 100 V
0.1 1 10 100
1
10
100
1000
5000
f = 1 MH z
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
50
Limited by Package
V
GS
= 6 V
R
θJC
= 1.3 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.1 1 10 100 500
0.001
0.01
0.1
1
10
100
10 s
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10-210
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Cap aci tan ce v s Dr ain
to Source Voltage
®
MOSFET
Figure 9.
Unc l amp ed I n duc t ive
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Figure 11.
Operating Area
Forward Bias Safe
Figure 10.
Ma ximum Contin uo us Dr ain
Current vs Case Temperature
Fi gure 12. Singl e Pulse M aximum
Power Dissipation
4
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Page 5
FDMS86250 N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
5
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Page 6
FDMS86250 N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
6
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Page 7
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FDMS86250 N-Channel PowerTrench
®
MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
Datasheet contains the design specificatio ns for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.
7
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Rev. I60
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