Datasheet FDMS8622 Datasheet (Fairchild)

FDMS8622

Power 56

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

N-Channel Power Trench® MOSFET

100 V, 16.5 A, 56 mΩ
Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested
 Termination is Lead-free and RoHS Compliant

= 56 mΩ at VGS = 10 V, ID = 4.8 A

DS(on)

= 88 mΩ at VGS = 6 V, ID = 3.9 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Applications

 POE Protection Switch
 DC-DC Switch

July 2011

®

r

, switching performance and

DS(on)

process that has

FDMS8622 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16.5

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation TC = 25 °C 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 17

C

= 25 °C (Note 1a) 4.8

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 4
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8622 FDMS8622 Power56 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMS8622 Rev.C

1

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FDMS8622 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 69 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA234V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -8 mV/°C

D

V

= 10 V, ID = 4.8 A 45 56

GS

= 6 V, ID = 3.9 A 62 88

GS

= 10 V , ID = 4.8 A, TJ = 125 °C 78 97

V

GS

Forward Transconductance VDD = 5 V, ID = 4.8 A 9 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 70 95 pF
Reverse Transfer Capacitance 3.6 5 pF
Gate Resistance 1.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.7 10 ns
Turn-Off Delay Time 10.2 18 ns
Fall Time 2.1 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.4 2.8 nC
Gate to Drain “Miller” Charge 1.3 2.6 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 4.8 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 2.8 4 nC

GS

GEN

= 6 Ω

V

DD

I

D

= 50 V,

= 4.8 A

301 400 pF

5.7 11 ns

57nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 ma terial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3.Starting TJ = 25 °C; N-ch: L = 0.1 mH, IAS = 16 A, VDD = 90 V, VGS = 10 V.

FDMS8622 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 30 48 nC

a)

50 °C/W when mounted on a
1 in2 pad of 2 oz copper

V

= 0 V, IS = 4.8 A (Note 2) 0.8 1.3

GS

= 0 V, IS = 1.9 A (Note 2) 0.8 1.2

V

GS

= 4.8 A, di/dt = 100 A/μs

I

F

2

θJC

b)

125 °C/W when mounted on a
minimum pad of 2 oz copper.

38 60 ns

is guaranteed by design while R

V

is determined by

θCA

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FDMS8622 N-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0

5

10

15

20

25

30

VGS = 8 V

VGS = 7 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 6 V

VGS = 5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 5 10 15 20 25 30 35

0

1

2

3

4

VGS = 10 V

VGS = 5 V

VGS = 6 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 7 V

VGS = 8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 4.8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

46810

0

50

100

150

200

250

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = 4.8 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

VGS, GATE TO SOURCE VOLTAGE (V )

23456789

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E V OLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

FDMS8622 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

3

Forward Voltage vs Source Current

Source to Drain Diode

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FDMS8622 N-Channel PowerTrench

0246

0

2

4

6

8

10

ID = 4.8 A

VDD = 75 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

1

10

100

500

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VO LTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10

1

2

4

6

8

10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

1

2

3

4

5

V

GS

= 6 V

R

θJA

= 50 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

A

, AMBIENT TEMPERATURE (

o

C)

0.01 0.1 1 10 100 500

0.01

0.1

1

10

100

100 us

1 ms

1 s

10 ms

DC

10 s

100 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10

-3

10

-2

10

-1

110

100 1000

0.1

1

10

100

1000

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

®

MOSFET

Capacitance vs Drain

to Source Voltage

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

FDMS8622 Rev.C

Figure 11. Forward Bias Safe

Op

erating Area

Figure 10.

Ma xim um C ont inu ous Dra in

Current vs Ambient Temperature

Figure 12.

Single Pulse Maximum

Power Dissipation

4

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FDMS8622 N-Channel PowerTrench

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25 °C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

®

MOSFET

FDMS8622 Rev.C

5

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FDMS8622 N-Channel PowerTrench

Dimensional Outline and Pad Layout

®

MOSFET

FDMS8622 Rev.C

6

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The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.

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FDMS8622 N-Channel PowerTrench

®

MOSFET

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b ) support or su stain life,
and (c) whose failure to perform when properly used in acco rdance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

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Counterfeiting of semiconductor parts is a growing problem in the industry. All ma nufactures of semiconductor products are exper iencing counterfeiting of their

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMS8622 Rev.C

Datasheet contains the design specificatio ns for product development. Sp ecifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.

Rev. I55

7

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