Page 1
FDMS86200
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 18 mΩ at VGS = 10 V, ID = 9.6 A
DS(on)
= 21 mΩ at VGS = 6 V, ID = 8.8 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
May 2012
®
process that has
FDMS86200 N-Channel Power Trench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 220 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 52
C
= 25 °C (Note 1a) 9.6
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86200 FDMS86200 Power 56 13 ’’ 12 mm 3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86200 Rev.C2
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
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Page 2
FDMS86200 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
= 250 μA, referenced to 25 °C 110 mV/°C
I
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.5 4.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 10 V, ID = 9.6 A 33 S
I
= 250 μA, referenced to 25 °C -10 mV/°C
D
V
= 10 V, ID = 9.6 A 15 18
GS
= 6 V, ID = 8.8 A 17 21
GS
= 10 V, ID = 9.6 A, TJ = 125 °C 28 34
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 203 270 pF
Reverse Transfer Capacitance 10 16 pF
= 75 V, VGS = 0 V,
V
DS
f = 1 MHz
2041 2715 pF
Gate Resistance 1.2 3 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 7.9 16 ns
Turn-Off Delay Time 27 44 ns
= 75 V, ID = 9.6 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 5.8 12 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 7.9 nC
= 0 V to 5 V 18 26 nC
GS
V
DD
I
= 9.6 A
D
= 75 V
Gate to Drain “Miller” Charge 7.7 nC
13 23 ns
33 46 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
is determined with the devi ce mount ed on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E
of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A.
AS
FDMS86200 Rev.C2
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 113 181 nC
a. 50 °C/W when mounted on
a 1 in
2
pad of 2 oz copper
V
= 0 V, IS = 2 A (Note 2) 0.69 1.2
GS
= 0 V, IS = 9.6 A (Note 2) 0.77 1.3
V
GS
= 9.6 A, di/dt = 100 A/μs
I
F
2
θJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
76
is guaranteed by design while R
V
120 ns
is determined by
θCA
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Page 3
FDMS86200 N-Channel Power Trench
012345
0
20
40
60
80
100
VGS = 4.5 V
VGS = 10 V
VGS = 5 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 20406080100
0
1
2
3
4
VGS = 4 V
VGS = 6 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 10 V
VGS = 5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.8
1.2
1.6
2.0
2.4
ID = 9.6 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATU RE (
o
C)
246810
10
20
30
40
50
TJ = 125 oC
ID = 9.6 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VO L T AGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
23456
0
20
40
60
80
100
TJ = 150 oC
V
DS
= 5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURC E VO LTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor ma liz ed O n-R esi sta nc e
vs Drain Current and Gate Voltage
®
MOSFET
Fi gur e 3 . No rm alize d On- R es ist an ce
vs Junction Temperature
FDMS86200 Rev.C2
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Sou rce to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS86200 N-Channel Power Trench
0 5 10 15 20 25 30 35
0
2
4
6
8
10
ID = 9.6 A
VDD = 75 V
V
DD
= 50 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 100 V
0.1 1 10 100
5
10
100
1000
5000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 50
1
10
20
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
15
30
45
60
Limited by Package
R
θJC
= 1.2 oC/W
V
GS
= 6 V
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
c
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100 1000
0.001
0.01
0.1
1
10
100
300
1 s
DC
100 ms
10 ms
1 ms
10 s
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10-210
-1
110
100 1000
0.5
1
10
100
1000
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Cap aci t an c e vs Dra i n
to Source Voltage
®
MOSFET
Figure 9.
Unc l amp e d In d uct i ve
Switching Capability
FDMS86200 Rev.C2
Figure 11.
Operating Area
Forward Bias Safe
Figure 10.
Ma xi mum Contin uo us Dr ain
Current v s Case Temper ature
Figure 12.
Single Pulse M aximum
Power Dissipation
4
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Page 5
FDMS86200 N-Channel Power Trench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
= 25 °C unless otherwise noted
J
Figure 13. Transient Thermal Response Curve
®
MOSFET
FDMS86200 Rev.C2
5
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Page 6
FDMS86200 N-Channel Power Trench
Dimensional Outline and Pad Layout
®
MOSFET
FDMS86200 Rev.C2
6
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Page 7
TRADEMARKS
®
™
tm
tm
The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconduct or and/or its global sub sidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
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Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
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F-PFS™
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FRFET
Global Power Resource
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Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®
®
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
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®
TinyLogic
TINYOPTO™
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®
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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XS™
®
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS86200 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in th e industry. All manuf actures of semiconductor p roducts are exper iencing counterfeiti ng of their
parts. Customers who inadvertently purchase count erfeit p art s experience many pr oble ms such as l o ss of bra nd repu tation , su bsta n dard pe rfo rmance, f aile d
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either d irectly from Fairchi ld or from Authorized Fairchild
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effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this pr actice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS86200 Rev.C2 7
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I61
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