Datasheet FDMS86105 Datasheet (Fairchild)

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FDMS86105

Power 56

Pin 1

Bottom

Top

2 1

and

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

 Primary DC-DC  Secondary DC-DC  Load Switch

N-Channel PowerTrench® MOSFET

100 V, 26 A, 34 mΩ Features

 Max r  Max r  Advanced package and silicon combination for low r

high efficiency

 MSL1 robust package design  100% UIL tested  RoHS Compliant

= 34 mΩ at VGS = 10 V, ID = 6 A

DS(on)

= 54 mΩ at VGS = 6 V, ID = 4.5 A

DS(on)

January 2011

process that has

FDMS86105 N-Channel PowerTrench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 56

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30 Single Pulse Avalanche Energy (Note 3) 50 mJ Power Dissipation TC = 25 °C 48 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 26

= 25 °C (Note 1a) 6

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86105 FDMS86105 Power 56 13 ’’ 12

Thermal Resistance, Junction to Case 2.6 Thermal Resistance, Junction to Ambient (Note 1a) 50

mm 3000 units

°C/W

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FDMS86105 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current V

= 250 μA, VGS = 0 V 100 V

= 250 μA, referenced to 25 °C 70 mV/°C

= 80 V, V

= ±20 V, V

= 0 V1μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 6 A 27 34

= 6 V, ID = 4.5 A3754

= 10 V, ID = 6 A, T

= 10 V, ID = 6 A15S

= 250 μA 2.0 2.8 4.0 V

= 125 °C 46 57

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 114 155 pF Reverse Transfer Capacitance 5 10 pF Gate Resistance 0.9 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 2.1 10 ns Turn-Off Delay Time 12 22 ns Fall Time 2.4 10 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 2.1 nC Gate to Drain “Miller” Charge 1.7 nC

= 50 V, VGS = 0 V,

f = 1 MHz

= 50 V, ID = 6 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 5 V 4.26nC

GEN

= 6 Ω

= 6 A

= 50 V,

483 645 pF

6.7 14 ns

7.5 11 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

Notes:

1. R

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 10 A, VDD = 90 V, VGS = 10 V.

Source-Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 32 51 nC

a. 50 °C/W when mounted on a 1 in

pad of 2 oz copper.

= 0 V, IS = 2 A (Note 2) 0.76 1.2

= 0 V, IS = 6 A (Note 2) 0.82 1.3

= 6 A, di/dt = 100 A/μs

θJC

38 61 ns

is guaranteed by design while R

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

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FDMS86105 N-Channel PowerTrench

012345

VGS = 5 V

VGS = 7 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

VGS = 7 V

VGS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 6 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 6 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

, JUNCTION TEMPERATUR E (

45678910

120

160

TJ = 125 oC

ID = 6 A

TJ = 25 oC

, GATE TO SOURCE VOL TAG E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

234567

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

MOSFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMS86105 N-Channel PowerTrench

02468

ID = 6 A

VDD = 75 V

= 25 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVAL ANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJC

= 2.6 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100 500

0.01

0.1

1 s

100 μs

10 ms

10 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

VGS = 10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25 °C unless otherwise noted

Figure 8.

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11. Forward Bias Safe

erating Area

Figure 10.

Ma ximum Con tin uous Drai n

Current vs Case Temperature

Figure 12.

Sing le Pulse Maximum

Power Dissipation

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FDMS86105 N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCEND ING O RDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE D U R ATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13.

= 25 °C unless otherwise noted

Junction-to-Ambient Transient Thermal Response Curve

MOSFET

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FDMS86105 N-Channel PowerTrench

Dimensional Outline and Pad Layout

MOSFET

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Page 7

TRADEMARKS

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconduct or and/or its gl obal subsidiaries, a nd is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS86105 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into t he bod y or (b ) support or sustain life, and (c) whose failure to perform when properly used in acco rdance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experienci ng counterfeiting of their parts. Customers who inadvertently purchase counterfe it parts e xperi en ce many problems such as loss of b rand rep utati on, substa nda rd perf orman ce, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairchi ld parts either directly from Fa irchild or from Author ized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assista nce for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized di stributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fai rchild Semiconductor. The datasheet is for reference information only.

Rev. I51