Datasheet FDMS86101DC Datasheet (Fairchild)

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Page 1

FDMS86101DC

Bottom

Top

Pin 1

Power 56

Pin 1

N-Channel Dual CoolTM Power Trench® MOSFET

100 V, 60 A, 7.5 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  100% UIL Tested

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 14.5 A

DS(on)

= 12 mΩ at VGS = 6 V, ID = 11.5 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest r while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

 Primary DC-DC MOSFET  Secondary Synchronous Rectifier  Load Switch

February 2012

process.

package

DS(on)

FDMS86101DC N-Channel Dual Cool

Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 60

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 216 mJ Power Dissipation TC = 25 °C 125 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

86101 FDMS86101DC Dual Cool

= 25 °C unless otherwise noted

= 25 °C 88

= 25 °C (Note 1a) 14.5

= 25 °C (Note 1a) 3.2

Power 56 13’’ 12 mm 3000 units

°C/W

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Page 2

FDMS86101DC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25°C 70 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.74V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -10 mV/°C

= 10 V, ID = 14.5 A 6 7.5

= 6 V, ID = 11.5 A 8.3 12

= 10 V, ID = 14.5 A, TJ = 125 °C 10 13

Forward Transconductance VDD = 10 V, ID = 14.5 A 44 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 467 625 pF Reverse Transfer Capacitance 23 35 pF Gate Resistance 1.4 Ω

Switching Characteristics

d(on)

d(off)

Q Q

g(TOT)

gs gd

Turn-On Delay Time Rise Time 8.2 17 ns Turn-Off Delay Time 25 40 ns Fall Time 5.5 11 ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge V Total Gate Charge 8.3 nC Gate to Drain “Miller” Charge 7 nC

= 50 V, VGS = 0 V,

f = 1 MHz

= 50 V , ID = 14.5 A,

= 10 V, R

= 0 V to 5 V 18 25 nC

GEN

= 6 Ω

= 14.5 A

= 50 V

2354 3135 pF

14 25 ns

31 44 nC

mΩV

Power Trench

MOSFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 62 99 nC

= 0 V, IS = 2.7 A (Note 2) 0.71 1.2

= 0 V, IS = 14.5 A (Note 2) 0.78 1.3

= 14.5 A, di/dt = 100 A/μs

54 87 ns

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Thermal Characteristics

FDMS86101DC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.3 Thermal Resistance, Junction to Case (Bottom Drain) 1.0 Thermal Resistance, Junction to Ambient (Note 1a) 38 Thermal Resistance, Junction to Ambient (Note 1b) 81 Thermal Resistance, Junction to Ambient (Note 1c) 27 Thermal Resistance, Junction to Ambient (Note 1d) 34 Thermal Resistance, Junction to Ambient (Note 1e) 16 Thermal Resistance, Junction to Ambient (Note 1f) 19 Thermal Resistance, Junction to Ambient (Note 1g) 26 Thermal Resistance, Junction to Ambient (Note 1h) 61 Thermal Resistance, Junction to Ambient (Note 1i) 16 Thermal Resistance, Junction to Ambient (Note 1j) 23 Thermal Resistance, Junction to Ambient (Note 1k) 11 Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

Power Trench

MOSFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 38 A, VDD = 90 V, VGS = 10 V.

pad of 2 oz copper

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FDMS86101DC N-Channel Dual Cool

012345

100

150

200

VGS = 6 V

VGS = 10 V

VGS = 7 V

VGS = 8 V

VGS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

, DRAIN CURRENT (A)

VDS, DRA IN T O SOURC E VOLTAGE (V)

0 50 100 150 200

VGS = 8 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

, DRAIN CURRENT (A)

= 6 V

VGS = 5 V

VGS = 7 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 14.5 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

45678910

TJ = 125 oC

ID = 14.5 A

TJ = 25 oC

, GATE TO SOURCE VOLTA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

2345678

100

150

200

TJ = 25 oC

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

Power Trench

MOSFET

Fig u r e 3. Nor m a lized O n - Resi s t ance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMS86101DC N-Channel Dual Cool

0 8 16 24 32

ID = 14.5 A

VDD = 25 V

= 50 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

100

1000

5000

f = 1 MH z V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10 100 300

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

Limited by Package

= 6 V

θJC

= 1.0 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100 500

0.01

0.1

100

300

10 s

10 ms

1 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 81

C/W

= 25

-3

-2

-1

110

100 1000

100

1000

2000

SINGLE PULSE R

θJA

= 81

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

Power Trench

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Ma x imum C onti nuous Drai n

Current vs Case Temperature

Fi gure 12. S ingle Pul se M aximu m

Power Dissipation

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FDMS86101DC N-Channel Dual Cool

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

Power Trench

MOSFET

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Page 7

Dimensional Outline and Pad Layout

FDMS86101DC N-Channel Dual Cool

Power Trench

MOSFET

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Page 8

TRADEMARKS

™

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/ or its global subsidiaries, and is n ot intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS86101DC N-Channel Dual Cool

Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are exper iencing counterfeiting of their

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61

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