Datasheet FDMS8558SDC Datasheet (Fairchild)

4
3
2
1

5
6
7
8

S

S

S

G

D
D

D

D

Bottom Top

Pin 1

D

D

D

D

G

S

S

S

Power 56

FDMS8558SDC

N-Channel PowerTrench

®

SyncFET

25 V, 90 A, 1.5 mΩ

Features

 Dual CoolTM PQFN package
 Max r
 Max r
 High performance technology for extremely low r
 SyncFETTM Schottky Body Diode

 RoHS Compliant

= 1.5 mΩ at VGS = 10 V, ID = 38 A

DS(on)

= 1.7 mΩ at VGS = 4.5 V, ID = 36 A

DS(on)

DS(on)

TM

General Description

This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-to­Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters
 Telecom Secondary Side Rectification
 High End Server/Workstation Vcore Low Side

June 2012

®

while maintaining

DS(on)

process.

FDMS8558SDC N-Channel PowerTrench

®

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

Drain to Source Voltage 25 V
Gate to Source Voltage 12 V
Drain Current -Continuous (Package limited) TC = 25 °C 90

-Pulsed 140
Single Pulse Avalanche Energy (Note 3) 145 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Top Source) 2.8
Thermal Resistance, Junction to Case (Bottom Drain) 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11

09DC FDMS8558SDC Power 56 13’’ 12 mm 3000 units

= 25°C unless otherwise noted

A

= 25 °C (Note 1a) 38

A

= 25 °C (Note 1a) 3.3

A

1

TM

A -Continuous T

W

°C/W

www.fairchildsemi.com

FDMS8558SDC N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = +12 V/-8 V, V

I

= 10 mA, referenced to 25 °C 24 mV/°C

D

= 0 V 500 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.4 2.2 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 10 mA, referenced to 25 °C -3 mV/°C

D

V

= 10 V, ID = 38 A 1.1 1.5

GS

= 4.5 V, ID = 36 A 1.3 1.7

GS

= 10 V, ID = 38 A, TJ = 125 °C 1.6 2.1

V

GS

Forward Transconductance VDS = 5 V, ID = 38 A 317 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1508 pF
Reverse Transfer Capacitance 195 pF

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.9 Ω

5118 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

Turn-On De lay Time
Rise Time 8ns
Turn-Off Delay Time 51 ns

= 13 V, ID = 38 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 7ns

g
g
gs
gd

Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 38 nC
Gate to Source Gate Charge 10 nC

V

DD

I

= 38 A

D

= 13 V,

Gate to Drain “Miller” Charge 9.7 nC

14 ns

81 nC

mΩV

®

SyncFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 49 nC

V

= 0 V, IS = 2 A (Note 2) 0.6 0.8

GS

= 0 V, IS = 38 A (Note 2) 0.8 1.2

V

GS

= 38 A, di/dt = 300 A/μs

I

F

2

35 ns

V

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Thermal Characteristics

FDMS8558SDC N-Channel PowerTrench

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.8
Thermal Resistance, Junction to Case (Bottom Drain) 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

θCA

°C/W

®

SyncFET

TM

SF

SS

DF

DS

G

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 145 mJ is based on starting TJ = 25 °C, L = 0.9 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 39 A.

2

pad of 2 oz copper

G

SS

SF

DS

DF

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

3

www.fairchildsemi.com

FDMS8558SDC N-Channel PowerTrench

0 0.2 0.4 0.6 0.8

0

20

40

60

80

100

120

140

VGS = 3.5 V

VGS = 3 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 2.5 V

VGS = 10V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 20406080100120140

0

1

2

3

4

5

6

VGS = 2.5 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = 38 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

2345678910

0

1

2

3

4

5

6

TJ = 125 oC

ID = 38 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.21.51.82.12.42.7

0

20

40

60

80

100

120

140

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

0.01

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - R e s i stance

vs Drain Current and Gate Voltage

®

SyncFET

TM

Fig u r e 3. Nor m a lized On R esista n c e

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-R esistan ce vs G ate to

Source Voltage

Figure 6.

Source to Drain Dio de

Forward Voltage vs Source Current

4

www.fairchildsemi.com

FDMS8558SDC N-Channel PowerTrench

0 153045607590

0

2

4

6

8

10

ID = 38 A

VDD = 15 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 13 V

0.1 1 10 30

100

1000

10000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.001 0.01 0.1 1 10 100 1000

1

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

50

100

150

200

Limited by Package

V

GS

= 4.5 V

R

θJC

= 1.4 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

1000

100 us

1 ms

1 s

10 ms

DC

10 s

100 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10-410-310-210

-1

110

100 1000

0.1

1

10

100

1000

10000

SINGLE PULSE
R

θJA

= 81

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capa c i t a nce v s D r ain

to Source Voltage

®

SyncFET

TM

Figure 9.

Unc l a mp e d I nd u c t iv e

Switching Capability

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

Figure 11. Forward Bias Safe

Operating Area

Figure 10. Maximum Continuous Drain

Current vs Ambient Temperature

Figure 12.

5

Single Pulse Maximum

Power Dissipation

www.fairchildsemi.com

FDMS8558SDC N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0001

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

SyncFET

TM

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

6

www.fairchildsemi.com

700 800 900 1000 1100

-5

0

5

10

15

20

25

30

35

40

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

0 5 10 15 20 25

10

-6

10

-5

10

-4

10

-3

10

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

Typical Characteristics (continued)

SyncFETTM Schottky body diode
Characteristics

FDMS8558SDC N-Channel PowerTrench

Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8558SDC.

Figure 14. FDMS8558SDC SyncFET

TM

body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high tem­perature and high reverse voltage. This will increase the power
in the device.

TM

Figure 15. SyncFET

body diode reverse

leakage versus drain-source voltage

®

SyncFET

TM

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

7

www.fairchildsemi.com

C

L

L

C

PKG

PKG

5.10

4.90

6.25

5.90

C

1.27

3.86

3.61

0.65

0.45

CHAMFER

CORNER

AS PIN #1

IDENT MAY

APPEAR AS

OPTIONAL

TOP VIEW

FRONT VIEW

BOTTOM VIEW

1.27

3.81

1.27

6.61

3.91

4.52

1.27

1234

8567

14

85

LAND PATTERN

RECOMMENDATION

12 3 4

876

0.10 C A B

0.50

0.40

(8X)

4.01? .30

5

0.77

A

B

(0.34)

0.61

NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STAND ARD REFERENC E:
JEDEC MO-240, ISSUE A, VAR. AA,
DATED OCTOBER 2002.
B) ALL DIMENS IONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE B URRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM .
D) DIME NSI O NI N G AN D T O L E RA N C ING PER
ASME Y14.5M-1994.
E) IT IS RECOMMENDED TO HAVE NO TR ACE S

OR VIAS WITHIN THE KEEP OUT AREA.

F) DRA WING FI LE N A ME: PQF N0 8 DREV3

SEE
DETAIL A

DETAIL A

SCALE: 2:1

0.05

0.00

0.30

0.20

0.08 C

5.85

5.65

OPTIONAL DRAFT ANGLE

MAY APPEAR ON FOUR

SIDES OF THE PACKAGE

PIN #1

IDENT MAY

APPEAR AS

OPTIONAL

SEATING

PLANE

0.10 C

1.05

0.95

0.1 M AX

SIDE VIEW

(3.44)

(0.90)

(2.60)

(3.30)

0.71

0.44

(0.82)

5.10

3.81

3.75

KEEP­OUT

AREA

Dimensional Outline and Pad Layout

FDMS8558SDC N-Channel PowerTrench

®

SyncFET

TM

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

8

www.fairchildsemi.com

TRADEMARKS

®

™

tm

tm

The following includes registered and unregistered trademarks and se rvice marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

2Cool™
AccuPower™
AX-CAP™*

®

BitSiC
Build it Now™
CorePLUS™
CorePOWER™

CROSSVOLT™

CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™

®

®

®

®
®

®

*

®

F-PFS™

®

FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
G

max™

GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

SM

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™

®

®

®

®

®

®*

The Power Franchise

TinyBoost™
TinyBuck™
TinyCalc™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™

®

TranSiC
TriFault Detect™
TRUECURRENT

μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™

®

®

®

*

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS8558SDC N-Channel PowerTrench

®

SyncFET

TM

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experien cing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputati on, substandard performan ce, fa iled
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measure s to protect ourselve s and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customer s to pur chase Fairch ild parts either directly from Fairchild or fro m Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The dat asheet is for refere nce information only.

Rev. I61

©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C

9

www.fairchildsemi.com