Page 1
FDMS8320L
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
D
D
D
D
S
S
S
G
Pin 1
N-Channel PowerTrench® MOSFET
40 V, 100 A, 1.1 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.1 mΩ at VGS = 10 V, ID = 32 A
DS(on)
= 1.5 mΩ at VGS = 4.5 V, ID = 27 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
June 2012
, fast switching speed ang body
DS(on)
FDMS8320L N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 100
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 264 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 238
C
= 25 °C (Note 1a) 36
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8320L FDMS8320L Power 56 13 ’’ 12 mm 3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8320L Rev.C3
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
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Page 2
FDMS8320L N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 21 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 32 A 0.8 1.1
GS
= 4.5 V, ID = 27 A 1.0 1.5
GS
= 10 V, ID = 32 A, TJ = 125 °C 1.2 1.7
V
GS
Forward Transconductance VDS = 5 V, ID = 32 A 206 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 2840 3780 pF
Reverse Transfer Capacitance 169 295 pF
= 20 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.1 1.3 2.6 Ω
8350 11110 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 19 35 ns
Turn-Off Delay Time 68 110 ns
= 20 V, ID = 32 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 17 30 ns
g
g
gs
gd
To tal Gate Charge VGS = 0 V to 10 V
To tal Gate Charge VGS = 0 V to 4.5 V 58 117 nC
Gate to Source Charge 19.2 nC
V
DD
I
= 32 A
D
= 20 V,
Gate to Drain “Miller” Charge 16.5 nC
17 30 ns
121 170 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mo unt ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V.
FDMS8320L Rev.C3
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 59 95 nC
Reverse Recovery Time
Reverse Recovery Charge 104 167 nC
a)
50 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
V
= 0 V, IS = 2.1 A (Note 2) 0.65 1.1
GS
= 0 V, IS = 32 A (Note 2) 0.74 1.2
V
GS
= 32 A, di/dt = 100 A/μs
I
F
= 32 A, di/dt = 300 A/μs
I
F
SF
DF
DS
G
2
SS
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
68 108 ns
53 85 ns
is guaranteed by design while R
V
is determined by
θCA
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Page 3
FDMS8320L N-Channel PowerTrench
0 0.2 0.4 0.6 0.8 1.0
0
30
60
90
120
150
VGS = 3 V
VGS = 3.5 V
VGS = 10 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0306090120150
0
1
2
3
4
5
V
GS
= 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 4 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 32 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
1
2
3
4
5
TJ = 125 oC
ID = 32 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.01.52.02.53.03.5
0
30
60
90
120
150
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
®
MOSFET
Fi g ure 3 . Norm aliz e d On R esist ance
vs Junction Temperature
FDMS8320L Rev.C3
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS8320L N-Channel PowerTrench
0255075100125
0
2
4
6
8
10
ID = 32 A
VDD = 24 V
V
DD
= 20 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 16 V
0.1 1 10 40
10
100
1000
10000
30000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100 1000
1
10
100
200
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
40
80
120
160
200
240
Limited by Package
V
GS
= 4.5 V
R
θJC
= 1.2 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CAS E TEMPERA TURE (
o
C)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
500
1 ms
1 s
10 ms
DC
10 s
100 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Capacitance vs Drain
to Source Voltage
®
MOSFET
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
FDMS8320L Rev.C3
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma xim um Contin uou s Dr ain
Current vs Case Temperature
Figure 12.
Sing le Pulse Maxim um
Power Dissipation
4
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Page 5
FDMS8320L N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
FDMS8320L Rev.C3
5
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Page 6
FDMS8320L N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
FDMS8320L Rev.C3
6
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Page 7
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®
™
tm
tm
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intended to be an exhaustive list of all such trademarks.
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®
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®
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®
FACT
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FastvCore™
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and Better™
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MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
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OPTOPLANAR
®
®
®
SM
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PowerXS™
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QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
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SupreMOS
SyncFET™
Sync-Lock™
®
®
®
®
®
®*
The Power Franchise
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®
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*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS8320L N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencin g counterfeiting of their
parts. Customers who inadvertently purchase counterfe it parts e xp erien ce many prob lems such a s loss of b rand rep utati on, substa nda rd perf orman ce, fa iled
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to prot ect oursel ve s and our customers from the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS8320L Rev.C3
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time withou t
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I61
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