Page 1
FDMS8018
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
Pin 1
D
D
D
D
S
S
S
G
N-Channel PowerTrench® MOSFET
30 V, 120 A, 1.8 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.8 mΩ at VGS = 10 V, ID = 30 A
DS(on)
= 2.4 mΩ at VGS = 4.5 V, ID = 26 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
VRM Vcore Switching for Desktop and Server
OringFET / Load Switching
DC-DC Conversion
Motor Bridge Switch
December 2011
, fast switching speed ang body
DS(on)
FDMS8018 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8018 FDMS8018 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8018 Rev.C
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 120
-Continuous (Package limited) T
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 126 mJ
Power Dissipation TC = 25 °C 83
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 100 °C 100
C
= 25 °C 174
C
= 25 °C (Note 1a) 30
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
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Page 2
FDMS8018 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 14 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 30 A 1.5 1.8
GS
= 4.5 V, ID = 26 A 1.9 2.4
GS
= 10 V, ID = 30 A, TJ = 125 °C 2.2 2.7
V
GS
Forward Transconductance VDS = 5 V, ID = 30 A 194 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1380 1835 pF
Reverse Transfer Capacitance 137 210 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 Ω
3935 5235 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 7.3 15 ns
Turn-Off Delay Time 38 62 ns
= 15 V, ID = 30 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 4.8 10 ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 28 39 nC
Gate to Source Charge 10.3 nC
V
DD
I
= 30 A
D
= 15 V,
Gate to Drain “Miller” Charge 7.7 nC
15 27 ns
58 61 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.67 1.1
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 29 A, VDD = 27 V, VGS = 10 V.
4.As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS8018 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 25 40 nC
Reverse Recovery Time
Reverse Recovery Charge 46 72 nC
a)
50 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
GS
= 0 V, IS = 30 A (Note 2) 0.77 1.2
V
GS
= 30 A, di/dt = 100 A/μs
I
F
= 30 A, di/dt = 300 A/μs
I
F
SF
DS
DF
G
2
SS
43 69 ns
34 55 ns
is guaranteed by design while R
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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Page 3
FDMS8018 N-Channel PowerTrench
0 0.5 1.0 1.5 2.0 2.5
0
30
60
90
120
150
180
VGS = 3.5 V
VGS = 3 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 4 V
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0 30 60 90 120 150 180
0
1
2
3
4
5
VGS = 4 V
VGS = 3.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 30 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
2
4
6
8
TJ = 125 oC
ID = 30 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
180
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
Fi g ure 3 . Norm a lize d On Re sist a nce
vs Junction Temperature
FDMS8018 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gat e to
Source Voltage
Figure 6.
Source to Drain Dio de
Forward Voltage vs Source Current
3
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Page 4
FDMS8018 N-Channel PowerTrench
0 102030405060
0
2
4
6
8
10
ID = 30 A
VDD = 20 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
0.1 1 10 50
10
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 100 1000
1
10
100
200
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
50
100
150
200
Limited by Package
V
GS
= 4.5 V
R
θJC
= 1.5 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100
0.01
0.1
1
10
100
500
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
1000
5000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
®
MOSFET
Capacitance vs Drain
to Source Voltage
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
FDMS8018 Rev.C
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma xim um Continuous Dr ain
Current vs Case Temperature
Figure 12.
Sing le Pul se Max imum
Power Dissipation
4
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Page 5
FDMS8018 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0004
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
FDMS8018 Rev.C
5
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Page 6
Dimensional Outline and Pad Layout
C
L
L
C
PKG
PKG
5.1 0
4.90
6.25
5.90
C
1.2 7
3.8 1
3.8 6
3.6 1
0.71
0.44
CHA MFE R
CORNER
AS PIN #1
IDEN T MAY
APPEAR AS
OPTIONAL
TOP VIEW
SIDE VIEW
BOTTOM V IEW
1.27
3.81
1.2 7
6.6 1
3.91
4.52
1.27
1234
8567
1
4
8
5
LAND PATTERN
RECOMMENDATION
12 34
876
0.10 C A B
0.46
0.36
(8X)
4.2 9
4.0 9
5
0.71
0.44
0.77
A
B
(0.39)
0.61
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
DATED OCTOBER 2002.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOL ERANCING PER
ASME Y14.5M-1994.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08AREV6.
SEE
DETAIL A
DETAIL A
SCALE: 2:1
0.05
0.00
0.30
0.20
0.08 C
6.25
5.90
5.85
5.65
5.1 0
4.90
6
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
PIN #1
IDEN T MAY
APPEAR AS
OPTIONAL
SEATING
PLANE
0.10 C
1.10
0.90
OPTION - A (SAWN TYPE)
OPTION - B (PUNCHED TYPE)
KEEP OUT AREA
(1.19)
(1.8 1)
(0.50)
(3.40)
(0.52)
0.1 5 MAX (2X)
5.10
3.7 5
FDMS8018 N-Channel PowerTrench
FDMS8018 Rev.C
6
®
MOSFET
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Page 7
TRADEMARKS
tm
®
™
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
®
FPS™
F-PFS™
®
FRFET
Global Power Resource
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
®
®
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
®
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
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®
TinyLogic
TINYOPTO™
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TinyPWM™
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®
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
®
*
FDMS8018 N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS8018 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I60
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