Page 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
FDMS7698
N-Channel PowerTrench® MOSFET
30 V, 22 A, 10 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 10 mΩ at VGS = 10 V, ID = 13.5 A
DS(on)
= 15 mΩ at VGS = 4.5 V, ID = 11.0 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
May 2011
, fast switching speed and body
DS(on)
FDMS7698 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 29 mJ
Power Dissipation TC = 25 °C 29
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 44
C
= 25 °C (Note 1a) 13.5
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 4.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7698 FDMS7698 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
1
www.fairchildsemi.com
Page 2
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 16 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
= 10 V, ID = 13.5 A 8.1 10
V
GS
V
= 4.5 V, ID = 11.0 A 12.2 15
GS
= 10 V, ID = 13.5 A
V
GS
T
J
= 125 °C
11 14
Forward Transconductance VDS = 5 V, ID = 13.5 A 53 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 370 495 pF
Reverse Transfer Capacitance 35 55 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.3 1.6 3.2 Ω
1205 1605 pF
FDMS7698 N-Channel PowerTrench
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 20 36 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 7.5 12 nC
Gate to Source Charge 3.9 nC
Gate to Drain “Miller” Charge 2.0 nC
= 15 V, ID = 13.5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.75 1.1
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in . boa rd of FR-4 mat erial . R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 8 15 nC
Reverse Recovery Time
Reverse Recovery Charge 13 24 nC
50 °C/W when mounted on a
a)
1 in2 pad of 2 oz copper
GS
= 0 V, IS = 13.5 A (Note 2) 0.86 1.2
V
GS
= 13.5 A, di/dt = 100 A/μs
I
F
= 13.5 A, di/dt = 300 A/μs
I
F
= 15 V,
V
DD
I
= 13.5 A
D
918ns
17 24 nC
24 38 ns
19 34 ns
is guaranteed by design while R
θJC
b) 125 °C/W when mounted
on a minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
2
www.fairchildsemi.com
Page 3
FDMS7698 N-Channel PowerTrench
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
VGS = 6 V
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
1
2
3
4
5
VGS = 4.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
VGS = 3.5 V
VGS = 4 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 13.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TE MPERATURE (
o
C)
246810
5
10
15
20
25
30
TJ = 125 oC
ID = 13.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
10
20
30
40
50
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
50
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor maliz ed O n-R esi stanc e
vs Drain Current and Gate Voltage
®
MOSFET
Figur e 3. No rm ali ze d On - R esist ance
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDMS7698 N-Channel PowerTrench
0 3 6 9 12 15 18
0
2
4
6
8
10
ID = 13.5 A
VDD = 10 V
V
DD
=15 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 20 V
0.1 1 10 30
10
100
1000
2000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 40
1
5
10
15
20
25
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
50
Limited by Package
V
GS
= 4.5 V
R
θJC
= 4.4 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
100 us
10 s
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS A REA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210-1110
100 1000
0.5
1
10
100
1000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
Cap aci tan c e vs Dra in
to Source Voltage
®
MOSFET
Figure 9.
Unc l amp e d In duc t ive
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
Figure 11.
Operating Area
Forward Bias Safe
Figure 10.
Maximum Co nt in uous Drain
Current vs Case Temperature
Fi gure 12. Single Pul se Maximum
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDMS7698 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMS7698 N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
6
www.fairchildsemi.com
Page 7
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
®
FPS™
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®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
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ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
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MillerDrive™
MotionMax™
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OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
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PowerXS™
SM
Programmable Active Droop™
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QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
®
®
™
®
®
®
The Power Franchise
The Right Technology for Your Success™
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TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
*
FDMS7698 N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of se miconductor products are experie ncing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselve s and our customers from the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I54
7
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