Page 1
FDMS7692
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
N-Channel PowerTrench® MOSFET
30 V, 7.5 mΩ
FDMS7692 N-Channel PowerTrench
August 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 7.5 mΩ at VGS = 10 V, ID = 13 A
DS(on)
= 13 mΩ at VGS = 4.5 V, ID = 10 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
fast switching speed and body
DS(on),
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 28
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25 °C 27
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 47
C
= 25 °C (Note 1a) 14
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7692 FDMS7692 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
Thermal Resistance, Junction to Case 4.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
www.fairchildsemi.com
Page 2
FDMS7692 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 13 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 13 A 6.5 7.5
GS
= 4.5 V, ID = 10 A 9.5 13
GS
= 10 V, ID = 13 A, TJ = 125 °C 9.0 1 1
V
GS
Forward Transconductance VDS = 5 V, ID = 13 A 68 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 325 435 pF
Reverse Transfer Capacitance 45 65 pF
Gate Resistance 1.0 2.0 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 2.7 10 ns
Turn-Off Delay Time 17 31 ns
Fall Time 2.3 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 7 10 nC
Gate to Source Charge 3.4 nC
Gate to Drain “Miller” Charge 1.9 nC
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
= 15 V, ID = 13 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 13 A
D
= 15 V,
1015 1350 pF
816ns
15 22 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mater ial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 6 12 nC
Reverse Recovery Time
Reverse Recovery Charge 12 21 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
V
= 0 V, IS = 2.1 A (Note 2) 0.75 1.1
GS
= 0 V, IS = 13 A (Note 2) 0.84 1.2
V
GS
= 13 A, di/dt = 100 A/μs
I
F
= 13 A, di/dt = 300 A/μs
I
F
2
θJC
21 34 ns
17 31 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
www.fairchildsemi.com
Page 3
FDMS7692 N-Channel PowerTrench
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
VGS = 3.5 V
VGS = 3.0 V
VGS = 4.0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
2
4
6
8
10
VGS = 3.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
VGS = 4.0 V
VGS = 3.0 V
VGS = 4. 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-75 -50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 13 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
5
10
15
20
25
30
TJ = 125 oC
ID = 13 A
TJ = 25 oC
V
GS
, GATE TO S OURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
10
20
30
40
50
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURC E V OLTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Nor ma liz ed O n-R esi st anc e
vs Drain Current and Gate Voltage
Fi gu re 3. Normalize d O n R es is ta nce
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Sou rce to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMS7692 N-Channel PowerTrench
0481216
0
2
4
6
8
10
ID = 13 A
VDD = 10 V
V
DD
= 15 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 20 V
0.1 1 10 30
10
100
1000
2000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 100
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN A V ALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
50
V
GS
= 4.5 V
Limited by Package
R
θJC
= 4.6 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100
0.01
0.1
1
10
100
100 us
10 s
DC
100 ms
10 ms
1 ms
1 s
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
200
10-410-310-210
-1
110
100 1000
0.5
1
10
100
300
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25 °C unless otherwise noted
J
®
MOSFET
Cap aci tan c e vs Dra in
to Source Voltage
Figure 9.
Unc l amp e d In d uct i ve
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma ximum Conti nuous Dr ain
Current vs Case Temperature
Figure 12.
Single Pu lse Maxim um
Power Dissipation
4
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Page 5
FDMS7692 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
0 20406080100
-2
0
2
4
6
8
10
12
14
di/dt = 300 A/μs
TIME (ns)
CURRENT (A)
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
®
MOSFET
Figure 14.
Bo dy Di ode Reverse
Recovery Characteristics
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
5
www.fairchildsemi.com
Page 6
FDMS7692 N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS7692 Rev.D1
6
www.fairchildsemi.com
Page 7
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tm
®
tm
™
tm
The following includes registered and unregistered trademar ks and service marks, owned by Fairchi ld Semiconductor and/ or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
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®
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®
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OPTOLOGIC
OPTOPLANAR
®
*
®
PDP SPM™
Power-SPM™
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Programmable Active Droop™
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QS™
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RapidConfigure™
®
Saving our world, 1mW/W/kW at a time™
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TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
*
FDMS7692 N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchil d
Semiconductor. The datasheet is for reference information only.
Rev. I55
©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FDMS7692 Rev.D1
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