Datasheet FDMS7602S Datasheet (Fairchild)

FDMS7602S

Q

Power 56

S2

G2

D1

G1

D1

S1/D2

S2

S2 S2 G2

D1

D1 D1

G1

Top Bottom

Dual N-Channel PowerTrench® MOSFET

Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 5.0 mΩ at VGS = 10 V, ID = 17 A

DS(on)

= 6.8 mΩ at VGS = 4.5 V, ID = 14 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook VCORE

FDMS7602S Dual N-Channel PowerTrench

August 2010

®

MOSFET

2

5 6 7 8

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 30

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 60 Power Dissipation for Single Operation TA = 25 °C 2.2 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 50 80

C

= 25 °C 12

A

= 25 °C 1.0

A

1a

1a 1c

1

17

2.5

1.0

4 3 2 1

1b

1b 1d

A

W

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 3.5 2

1a

1c

50

120

1b

1d

°C/WR

Package Marking and Ordering Information

1

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Device Marking Device Package Reel Size Tape Width Quantity

FDMS7602S FDMS7602S Power 56 13 ” 12 mm 3000 units

FDMS7602S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

ID = 250 μA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 μA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current

VGS = 20 V, VDS= 0 V VGS = 20 V, VDS= 0 V

GS

= 0 V

Q1Q230

30

Q1 Q2

15 15

V

mV/°C

1

500 100

100

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 μA VGS = VDS, ID = 1 mA

ID = 250 μA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V , ID = 12 A , TJ = 125 °C

VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VGS = 10 V , ID = 17 A , TJ = 125 °C

VDS = 5 V, ID = 12 A VDS = 5 V, ID = 17 A

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

1.8

1

1.8

-6

-5

6.0

8.5

8.3

4.2

5.4

4.9

3 3

mV/°C

7.5 12 12

5.0

6.8

7.2

63 87

μA μA

nA nA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q2: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q1: VDD = 15 V, ID = 12 A, R

Q2: VDD = 15 V, ID = 17 A, R

= 0 V to 10 V

GS

Q1 VDD = 15 V,

= 0 V to 4.5 V

GS

ID = 12 A

Q2 VDD = 15 V, ID = 17 A

Q1 Q2

GEN

= 6 Ω

Q1 Q2

Q1

GEN

= 6 Ω

Q2 Q1

Q2

1315 2020

445 860

45 9570145

0.9

0.7

8.61118

2.5

3.81010 20

27

2.3

3.21010 20

33

9.31613

4.3

5.8

2.2

4.6

1750 2690

600

1145

20

32 43

28 46

22

pF

Ω

ns

nC

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FDMS7602S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes: 1: R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 57 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 17 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/μs

F

Q2 I

= 17 A, di/dt = 300 A/μs

F

Q1 Q2

is guaranteed by design wh ile R

θJC

b. 50 °C/W when mounted on a 1 in

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

0.8 272943

103118

1.2

46

50

θCA

is determined

V

ns

nC

®

MOSFET

2: Pulse Test: Pulse Wid th < 300 μs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

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FDMS7602S Dual N-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0

0

10

20

30

40

VGS = 4.5 V

VGS = 3.5 V

V

GS

= 6 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0

1

2

3

4

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4.5 V

VGS = 6 V

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 12 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

10

20

30

40

TJ = 125 oC

ID = 12 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.5 2.0 2.5 3.0 3.5 4.0

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel)T

Figure 1. On Region Characteristics Figure 2. Norm a l ized O n -Resi s tance

= 25°C unless otherwise noted

J

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor mali z ed On Resi stan ce

vs Junction Temperature

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Figure 4. On- Re sistance vs Gate to

Source Voltage

Forward Voltage vs Source Current

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FDMS7602S Dual N-Channel PowerTrench

0 5 10 15 20

0

2

4

6

8

10

ID = 12 A

V

DD

= 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10 30

10

100

1000

2000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL TAGE (V)

C

rss

C

oss

C

iss

25 50 75 100 125 150

0

20

40

60

Limited by Package

V

GS

= 4.5 V

R

θJC

= 3.5 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

DC

100 ms

10 ms

1 ms

1s

I

D

, DRAIN CURRENT (A)

VDS, DRA IN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10s

100us

200

10

-4

10

-3

10

-2

10

-1

110

100 1000

1

10

100

1000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 125 oC/W

T

A

= 25 oC

t, PULSE WIDTH (s)

0.5

Typical Characteristics (Q1 N-Channel)T

Figure 7. Gate Charge Characteristics Figure 8. C a p a c i t ance vs Drain

= 25°C unless otherwise noted

J

to Source Voltage

®

MOSFET

Figure 9. Maximum Co ntinuous Drain

Current vs Case Temperature

Figure 10. Fo rward Bi as Safe

Figure 11. Single Pulse Maximum Power Dissipation

Operating Area

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FDMS7602S Dual N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE R

θJA

= 125 oC/W

(Note 1c)

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics (Q1 N-Channel)T

Figure 12. Junction-to-Ambient Transient Thermal Response Cu rve

= 25°C unless otherwise noted

J

®

MOSFET

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Typical Characteristics (Q2 SyncFET)

0.0 0.5 1.0 1.5 2.0

0

20

40

60

VGS = 4.5 V

VGS = 3 V

V

GS

= 4 V

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0204060

0

1

2

3

4

5

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4.5 V

VGS = 4 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 17 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

5

10

15

20

TJ = 125 oC

ID = 17 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.5 2.0 2.5 3.0 3.5

0

20

40

60

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

60

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 13. On-Region Characteristics Figure 14. Normalized on-Resistance vs Drain

FDMS7602S Dual N-Channel PowerTrench

Current and Gate Voltage

®

MOSFET

Figure 15. Normalized On-Resistance

vs Junction Temperature

Figure 17. Transfer Characteristics Figure 18. Source to Drain Diode

Figure 16. On-Resistance vs Gate to

Source Voltage

Forward Voltag e vs Source Current

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Typical Characteristics (Q2 SyncFET)

0 10203040

0

2

4

6

8

10

ID = 17 A

V

DD

= 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10 30

60

100

1000

3000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL TAGE (V)

C

rss

C

oss

C

iss

25 50 75 100 125 150

0

20

40

60

80

100

V

GS

= 4.5 V

R

θJC

= 2 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

Limited by package

0.01 0.1 1 10 100

0.01

0.1

1

10

100

100 us

DC

100 ms

10 ms

1 ms

1 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AR EA IS

LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 120

o

C/W

T

A

= 25

o

C

10 s

200

10

-4

10

-3

10

-2

10

-1

11010210

3

1

10

100

1000

SINGLE PULSE R

θJA

= 120

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

FDMS7602S Dual N-Channel PowerTrench

Figure 19. Gate Charge Charact er is ti cs

Figu re 21. Maxi mu m Contin uo us Drain

Current vs

Case Temperature

Figure 20. Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 22. Forward Bias Safe Operating Area

Figure 23. Single Pulse Maximum Power Dissipation

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Typical Characteristics (Q2 SyncFET)

10

-4

10

-3

10

-2

10

-1

11010210

3

0.001

0.01

0.1

1

SINGLE PULSE R

θJA

= 120 oC/W

(Note 1d)

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Figure 24. Junction-to-Ambient Transient Thermal Response Curve

FDMS7602S Dual N-Channel PowerTrench

®

MOSFET

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0 50 100 150 200

-5

0

5

10

15

20

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

Figure 25. FDMS7602S SyncFET body

diode reverse recovery characteristic

0 5 10 15 20 25 30

1

10

100

1000

10000

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (uA)

VDS, REVERSE VOLTAGE (V)

Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMS7602S Dual N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 25 shows the reverse recovery characteristic of the FDMS7602S.

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

®

MOSFET

Figure 26. SyncFET body diode reverse leakage versus drain-source voltage

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Dimensional Outline and Pad Layout

FDMS7602S Dual N-Channel PowerTrench

®

MOSFET

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TRADEMARKS

®

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor a nd/or its global subsid iaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

®

*

F-PFS™

®

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®

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

®

SM

®

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

®

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®* The Power Franchise

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®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDMS7602S Dual N-Channel PowerTrench

®

MOSFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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.

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I48

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