Page 1
FDMS7570S
DS(on)
TM
General Description
The FDMS7570S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
N-Channel PowerTrench® SyncFET
25 V, 49 A, 1.95 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.95 mΩ at VGS = 10 V, ID = 28 A
DS(on)
= 2.85 mΩ at VGS = 4.5 V, ID = 22 A
DS(on)
FDMS7570S N-Channel PowerTrench
December 2009
®
SyncFET
Top
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 144 mJ
Power Dissipation TC = 25 °C 83
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
D
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 156
C
= 25 °C (Note 1a) 28
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
4
3
2
1
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
G
S
S
S
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7570S FDMS7570S Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7570S Rev.C
1
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Page 2
FDMS7570S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
(Note 2)
= 10 mA, referenced to 25 °C 22 mV/°C
I
D
= 0 V 500 µA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 28 A 1.6 1.95
GS
= 4.5 V, ID = 22 A 2.3 2.85
GS
= 10 V, ID = 28 A, TJ = 125 °C 2.4 3.0
V
GS
Forward Transconductance VDS = 5 V, ID = 28 A 170 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 912 1215 pF
Reverse Transfer Capacitance 172 260 pF
Gate Resistance 1.2 2.1 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 5.9 12 ns
Turn-Off Delay Time 34 55 ns
Fall Time 410ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 22 32 nC
Gate to Source Gate Charge 9.9 nC
Gate to Drain “Miller” Charge 5.3 nC
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
= 13 V, ID = 28 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 28 A
D
= 13 V,
3392 4515 pF
14 25 ns
49 69 nC
mΩV
®
SyncFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.43 0.8
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mate ria l. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 27 43 nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. E
of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7570S Rev.C
GS
= 0 V, IS = 28 A (Note 2) 0.78 1.2
V
GS
= 28 A, di/dt = 300 A/ µs
I
F
2
28 45 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMS7570S N-Channel PowerTrench
Typical Characteristics T
180
PULSE DURATION = 80 µs
135
90
45
, DRAIN CURRENT (A)
D
I
0
012345
Figure 1.
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics Figure 2.
1.5
ID = 28 A
1.4
V
= 10 V
GS
1.3
1.2
1.1
NORMALIZED
1.0
0.9
DRAIN TO SOURCE ON-RESISTANCE
0.8
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
Fi g ure 3 . Norm a lize d On R e sist a nce
vs Junction Temperature
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 3 V
VGS =
2.7 V
o
(
C
)
8
PULSE DURA TION = 80 µs
VGS = 2.7 V
DUTY CYCLE = 0.5% MAX
6
VGS = 3 V
4
NORMALIZED
2
DRAIN TO SOURCE ON-RESISTANCE
0
04590135180
I
,
DRAIN CURRENT (A)
D
VGS = 3.5 V
VGS = 4.5 V
V
GS
= 10 V
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
8
)
Ω
m
(
6
4
DRAIN TO
,
DS(on)
r
2
SOURCE ON-RESISTANCE
0
246810
Figure 4.
ID = 28 A
V
,
GATE TO SOURCE VO LTAGE (V)
GS
On-Resistance vs Gate t o
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
Source Voltage
®
SyncFET
180
135
90
45
, DRAIN CURRENT (A)
D
I
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
FDMS7570S Rev.C
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
Figure 5. Transfer Characteristics
200
V
= 0 V
GS
100
10
TJ = 125 oC
1
0.1
, REVERSE DRAIN CURRENT (A)
S
I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Dio de
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
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Page 4
FDMS7570S N-Channel PowerTrench
Typical Characteristics T
10
ID = 28A
8
VDD = 13 V
6
V
= 10 V
DD
4
2
, GATE TO SOURCE VOLTAGE ( V)
GS
V
0
0 1020304050
Figure 7.
50
10
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
TJ = 25 oC
= 25 °C unless otherwise noted
J
V
=
16 V
DD
TJ = 100 oC
5000
1000
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
100
0.1 1 10 30
VDS, DRAIN TO SOURCE VOL TA G E (V)
Capacitance vs Drain
to Source Voltage
160
V
= 10 V
GS
= 4.5 V
GS
120
80
V
C
iss
C
oss
C
rss
®
SyncFET
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 1000
Figure 9.
500
100
10
1
, DRAIN CURRENT (A)
D
I
0.1
0.01
0.01 0.1 1 10 100
TJ = 125 oC
tAV, TIME IN AVALA NCHE (ms)
DRAIN CURRENT (A)
,
40
D
I
Limited by Package
0
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
R
θ
JC
= 1.5 oC/W
(
o
C
)
Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain
Current vs Case Temperature
5000
1000
100
10
, PEAK TRANSIENT POWER (W)
)
1
PK
(
P
0.5
10-410-310-210-1110
Figure 12.
t, PULSE WIDTH (sec)
Single Pulse Ma ximum
Power Dissipation
SINGLE PULSE
R
= 125 oC/W
θ
JA
= 25 oC
T
A
100 1000
THIS AREA IS
LIMITED BY r
Figure 11.
DS(on
)
SINGLE PULSE
= MAX RATED
T
J
R
= 125 oC/W
θ
JA
= 25 oC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
Forwa r d B i a s S afe
Operating Area
100 us
1 ms
10 ms
100 ms
1s
10s
DC
FDMS7570S Rev.C
4
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Page 5
FDMS7570S N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
NORMALIZED THERMAL
θJA
Z
IMPEDANCE,
0.001
0.0001
0.1
0.01
= 25 °C unless otherwise noted
J
SINGLE PULSE
R
= 125 oC/W
θJA
-2
10
t, RECTANGULAR PULSE DURATION (sec)
-1
10
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
θJA
1/t2
x R
θJA
+ T
2
A
110
100 1000
®
SyncFET
FDMS7570S Rev.C
5
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Page 6
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
FDMS7570S N-Channel PowerTrench
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7570S.
30
25
20
15
10
CURRENT (A)
5
0
-5
0 50 100 150 200
di/dt = 300 A/µs
TIME (ns)
Figure 14. FDMS7570S SyncFET body
diode reverse recovery characteristic
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
-2
10
-3
10
-4
10
-5
10
, REVERSE LEAKAGE CURRENT (A)
-6
10
DSS
I
0 5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
®
SyncFET
FDMS7570S Rev.C
6
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Page 7
Dimensional Outline and Pad Layout
FDMS7570S N-Channel PowerTrench
®
SyncFET
FDMS7570S Rev.C
7
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Page 8
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and ser vice marks, owned by Fairchild Semiconductor and/or its global subsidia ries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
EZSWITCH™*
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
®
®
®
®
®
FETBench™
®
FlashWriter
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
®
*
®
SM
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
®
®
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
®
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS7570S N-Channel PowerTrench
®
SyncFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or ( b) su pport or sustai n li fe,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencin g counterfeiting of their
parts. Customers who inadvertently purchase counterfe it parts e xperi en ce many prob lems such a s loss of b rand rep utati on, substa nda rd perf orman ce, fa iled
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel ve s and our customers from the
proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairchi ld parts either directly from Fa irchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
committed to combat this global problem and encourage o ur customers to do their part in stopping this practice b y buying direct or from authorized dist ributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS7570S Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
8
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Rev. I45
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