Datasheet FDMS7558S Datasheet (Fairchild)

Page 1

FDMS7558S

DS(on)

General Description

The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r

while maintaining excellent switching performance. This

DS(on)

device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for Synchronous Buck Converters  Notebook  Server  Telecom

 High Efficiency DC-DC Switch Mode Power Supplies

N-Channel PowerTrench® SyncFET

25 V, 49 A, 1.25 mΩ

Features

 Max r  Max r  Advanced Package and Silicon combination for low r

and high efficiency

 SyncFET Schottky Body Diode  MSL1 robust package design  100% UIL tested  RoHS Compliant

= 1.25 mΩ at VGS = 10 V, ID = 32 A

DS(on)

= 1.75 mΩ at VGS = 4.5 V, ID = 28 A

DS(on)

FDMS7558S N-Channel PowerTrench

December 2009

SyncFET

Top

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 180 Single Pulse Avalanche Energy (Note 3) 288 mJ Power Dissipation TC = 25 °C 89 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Bottom

= 25 °C unless otherwise noted

Pin 1

= 25 °C 199

= 25 °C (Note 1a) 32

= 25 °C (Note 1a) 2.5

4 3 2 1

Thermal Characteristics

S S S

θJC

θJA

Thermal Resistance, Junction to Case 1.4 Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7558S FDMS7558S Power 56 13 ’’ 12 mm 3000 units

°C/W

www.fairchildsemi.com

Page 2

FDMS7558S N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆BV

DSS

∆T

DSS

GSS

On Characteristics

GS(th)

∆V

GS(th)

∆T

DS(on)

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

(Note 2)

= 10 mA, referenced to 25 °C 21 mV/°C

= 0 V 500 µA

= 0 V 100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 32 A 1.0 1.25

= 4.5 V, ID = 28 A 1.4 1.75

= 10 V, ID = 32 A, TJ = 125 °C 1.4 1.8

Forward Transconductance VDS = 5 V, ID = 32 A 221 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1615 2150 pF Reverse Transfer Capacitance 317 475 pF Gate Resistance 0.5 1.0 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 918ns Turn-Off Delay Time 44 70 ns Fall Time 510ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 39 55 nC Gate to Source Gate Charge 16.5 nC Gate to Drain “Miller” Charge 9.7 nC

= 13 V, VGS = 0 V,

f = 1 MHz

= 13 V, ID = 32 A,

= 10 V, R

GEN

= 6 Ω

= 32 A

= 13 V,

5843 7770 pF

18 33 ns

85 119 nC

mΩV

SyncFET

Drain-Source Diode Characteristics

= 0 V, IS = 2 A (Note 2) 0.38 0.7

Notes:

is determined with the device mounted on a 1i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 52 84 nC

a. 50 °C/W when mounted on a

1 in

pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. of 288 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 24 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 35 A.

3. E

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7558S Rev.C

= 0 V, IS = 32 A (Note 2) 0.75 1.2

= 32 A, di/dt = 300 A/µs

39 63 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

www.fairchildsemi.com

Page 3

FDMS7558S N-Channel PowerTrench

Typical Characteristics T

180

VGS = 10 V

150

VGS = 4.5 V

120

VGS = 3.5 V

, DRAIN CURRENT (A)

012345

DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On Region Characteristics Figure 2.

1.5

ID = 32 A

1.4

= 10 V

1.3

1.2

1.1

1.0

NORMALIZED

0.9

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.7

-75 -50 -25 0 25 50 75 100 125 150

JUNCTION TEMPERATURE

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

VGS = 3 V

VGS =

2.5 V

(

)

VGS = 2.5 V

VGS = 3 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

0 30 60 90 120 150 180

VGS = 3.5 V

DRAIN CURRENT (A)

VGS = 4.5 V

= 10 V

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

)

Ω

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

Figure 4.

On-Re sistance v s Gate to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 32 A

TJ = 125 oC

TJ = 25 oC

GATE TO SOURCE VOLTAGE (V)

Source Voltage

SyncFET

180

150

120

, DRAIN CURRENT (A)

FDMS7558S Rev.C

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

1.5 2.0 2.5 3.0 3.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

200 100

= 0 V

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

0.1

, REVERSE DRAIN CURRENT (A)

0.01

0.00.20.40.60.81.0

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDMS7558S N-Channel PowerTrench

Typical Characteristics T

ID = 32 A

= 13 V

, GATE TO SOURCE VOLTAGE ( V)

0 153045607590

Figure 7.

VDD = 10 V

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

16 V

TJ = 25 oC

TJ = 100 oC

8000

1000

CAPACITANCE (pF)

f = 1 MHz

= 0 V

200

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Capacitance vs Drain

to Source Voltage

200

= 10 V

150

100

= 4.5 V

iss

oss

rss

SyncFET

, AVALANCHE CURRENT (A)

0.01 0.1 1 10 100 1000

Figure 9.

300 100

, DRAIN CURRENT (A)

0.1

0.01

0.01 0.1 1 10 100

DRAIN CURRENT (A)

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

Limited by Package

25 50 75 100 125 150

= 1.4 oC/W

CASE TEMPERATURE

(

)

Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain

Current vs Case Temperature

1000

THIS AREA IS

LIMITED BY r

Figure 11.

DS(on

)

SINGLE PULSE

= MAX RATED

= 50 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Forw a r d B i a s Safe

Operating Area

1 ms

10 ms 100 ms

1 s 10 s

100

PEAK TRANSIENT POWER (W)

)

(

0.5

10-310

Figure 12.

= 10 V

-2

-1

t, PULSE WIDTH (sec)

110

Single Pulse Maximum

Pow er Dissipation

SINGLE PULSE

= 50 oC/W

= 25 oC

100 1000

FDMS7558S Rev.C

www.fairchildsemi.com

Page 5

FDMS7558S N-Channel PowerTrench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

θJA

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

D = 0.5

0.2

0.1

0.05

0.02

0.01

-3

-2

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

SINGLE PULSE

= 50 oC/W

θJA

-1

t, RECTANGULAR PULSE DURATION (sec)

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

110

1/t2

x R

+ T

θJA

100 1000

SyncFET

FDMS7558S Rev.C

www.fairchildsemi.com

Page 6

Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMS7558S N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7558S.

35 30 25 20 15 10

CURRENT (A)

5 0

-5 0 5 10 15 20 25

di/dt = 300 A/µs

TIME (ns)

Figure 14. FDMS7558S SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temper- ature and high reverse voltage. This will increase the power in the device.

-2

-3

-4

-5

, REVERSE LEAKAGE CURRENT (A)

-6

DSS

0 5 10 15 20 25

VDS, REVERSE VOLTAGE (V)

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

Figure 15. SyncFET body diode reverses leakage versus drain-source voltage

SyncFET

FDMS7558S Rev.C

www.fairchildsemi.com

Page 7

Dimensional Outline and Pad Layout

FDMS7558S N-Channel PowerTrench

SyncFET

FDMS7558S Rev.C

www.fairchildsemi.com

Page 8

TRADEMARKS

The following includes registered and unregistered trademarks and ser vice marks, owned by Fairchild Semiconductor and/or its global subsidia ries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™

® ®

FETBench™

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™

RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS7558S N-Channel PowerTrench

SyncFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or ( b) su pport or sustai n li fe, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencin g counterfeiting of their parts. Customers who inadvertently purchase counterfe it parts e xperi en ce many prob lems such a s loss of b rand rep utati on, substa nda rd perf orman ce, fa iled

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel ve s and our customers from the proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairchi ld parts either directly from Fa irchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

committed to combat this global problem and encourage o ur customers to do their part in stopping this practice b y buying direct or from authorized dist ributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMS7558S Rev.C

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I45

www.fairchildsemi.com