Datasheet FDMS5672 Datasheet (Fairchild)

tm

FDMS5672 N-Channel UltraFET Trench® MOSFET

60V, 22A, 11.5mΩ Features

 Max r

 Typ Qg = 32nC at VGS = 10V

 Low Miller Charge

 Optimized efficiency at high frequencies

 RoHS Compliant

= 11.5mΩ at VGS = 10V, ID = 10.6A

DS(on)

= 16.5mΩ at VGS = 6V, ID = 8A

DS(on)

S

Pin 1

S

G

General Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 DC - DC Conversion

D

5

December 2007

, low ESR, low total and Miller gate charge,

G

4

FDMS5672 N-Channel UltraFET Trench

®

MOSFET

D

6

7

D

Power 56 (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25°C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 60

Single Pulse Avalanche Energy (Note 3) 337 mJ

Power Dissipation TC = 25°C 78

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

D

= 25°C unless otherwise noted

A

C

A

8

= 25°C 65

= 25°C (Note 1a) 10.6

= 25°C (Note 1a) 2.5

S

3

S

2

S

1

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.6

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMS5672 FDMS5672 Power 56 13’’ 12mm 3000 units

1

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FDMS5672 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = 48V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 59 mV/°C

= 0V 1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3.2 4 V

Gate to Source Threshold Voltage Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 10.6A 26 S

ID = 250µA, referenced to 25°C -11 mV/°C

VGS = 10V, ID = 10.6A 9.4 11. 5

VGS = 6V, ID = 8A 13.0 16.5

VGS = 10V, ID = 10.6A, T

= 125°C

J

15.0 18.0

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 375 500 pF

Reverse Transfer Capacitance 120 180 pF

VDS = 30V, VGS = 0V, f = 1MHz

2100 2800 pF

Gate Resistance f = 1MHz 1.2 Ω

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 17 31 ns

Turn-Off Delay Time 22 35 ns

VDD = 30V, ID = 10.6A VGS = 10V, R

GEN

Fall Time 8 16 ns

Total Gate Charge at 10V V

= 0V to 10V

GS

Gate to Source Gate Charge 10 nC

Gate to Drain “Miller” Charge 8.3 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting T

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 42 63 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a.

50°C/W when mounted on a

2

pad of 2 oz co pper

1 in

= 25°C, L = 3mH, IAS = 15A, VDD = 60V, VGS = 10V.

J

= 0V, IS = 10.6A (Note 2) 0.80 1.20 V

GS

IF = 10.6A, di/dt = 100A/µs

= 6Ω

VDD = 30V ID = 10.6A

16 29 ns

32 45 nC

35 53 ns

is guaranteed by design while R

θJC

125°C/W when mounted on a

b.

minimum pad of 2 oz copper

is determined by

θCA

FDMS5672 Rev.C2

2

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FDMS5672 N-Channel UltraFET Trench

Typical Characteristics T

120

VGS = 10V

100

VGS = 8V

80

60

40

, DRAIN CURRENT (A) D

I

20

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

NORMALIZED

Figure 1.

1.8

1.6

1.4

1.2

1.0

0.8

On Region Characteristics Figure 2.

ID = 10.6A V

= 10V

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

VGS = 7V

= 25°C unless otherwise noted

J

VGS = 6V

VGS = 5V

4.0

3.5

3.0

2.5

2.0

NORMALIZED

1.5

1.0

0.5

DRAIN TO SOURCE ON-RESISTANCE

0 20406080100120

VGS = 5V

VGS = 6V

ID, DRAIN CURRENT(A)

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

VGS = 8V

VGS = 10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

30

25

(mΩ)

20

ID =10.6A

15

, DRAIN TO

DS(on)

r

10

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

VGS = 7V

®

MOSFET

0.6

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

60

50

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

FDMS5672 Rev.C2

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 25oC

TJ = 150oC

23456

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

Figure 5. Transfer Characteristics

3

SOURCE ON-RESISTANCE

5

45678910

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

V

= 0V

GS

10

1

TJ = 150oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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FDMS5672 N-Channel UltraFET Trench

Typical Characteristics T

10

ID = 10.6A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

0

GS

V

0 5 10 15 20 25 30 35

Qg, GATE CHARGE(nC)

Figure 7.

Gate Charge Characteristics Figure 8.

20

10

, AVALANCHE CURRENT(A)

AS

I

1

0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE(ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

50

10

1

0.1

OPERATION IN THIS AREA MAY BE

, DRAIN CURRENT (A)

LIMITED BY r

D

I

0.01

1E-3

0.1 1 10 100

DS(on)

VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

VDD = 30V

TJ = 125oC

V

DD

SINGLE PULSE T

= MAX RATED

J

= 25oC

T

A

= 25°C unless otherwise noted

J

= 20V

VDD = 40V

TJ = 25oC

500

100us 1ms

10ms

100ms

1s

10s DC

500

4000

C

iss

1000

C

CAPACITANCE (pF)

100

f = 1MHz V

= 0V

GS

40

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

oss

C

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

70

60

V

= 10V

50

GS

40

V

= 6V

30

20

, DRAIN CURRENT (A)

D

I

10

R

θJC

0

25 50 75 100 125 150

GS

Limited by Package

= 1.6oC/W

TC, CASE TEMPERATURE (oC)

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

), PEAK TRANSIENT POWER (W)

P(

2000

1000

PK

100

0.6

10

1

10

Figure 12.

VGS = 10V

SINGLE PULSE

-3

-2

10

t, PULSE WIDTH (s)

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

I = I

25

-1

10010

150 TA–

-----------------------

1

S i n g l e P u l s e M a x i m u m

Power Dissipation

125

TA = 25oC

2

10

60

®

MOSFET

3

10

FDMS5672 Rev.C2

4

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FDMS5672 N-Channel UltraFET Trench

Typical Characteristics T

2

DUTY CYCLE -DESCENDI NG ORDER

1

D = 0.5

0.2

0.1

0.01

1E-3

5E-3

0.1

0.05

0.02

0.01

SINGLE PULSE

-3

10

-2

10

θJA

IMPEDANCE, Z

NORMALIZED THERMAL

= 25°C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

2

10

3

10

®

MOSFET

FDMS5672 Rev.C2

5

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FDMS5672 N-Channel UltraFET Trench

®

MOSFET

FDMS5672 Rev.C2

6

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The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDMS5672 N-Channel UItraFET Trench

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I32

FDMS5672 Rev. C2

7

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