Datasheet FDMS5352 Datasheet (Fairchild)

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Page 1

May 2009

FDMS5352 N-Channel Power Trench

FDMS5352

N-Channel Power Trench® MOSFET

60V, 49A, 6.7m:

Features

 Max r

 Advanced Package and Silicon combination for low r

 MSL1 robust package design

 100% UIL Tested

 RoHS Compliant

= 6.7m: at VGS = 10V, ID = 13.6A

DS(on)

= 8.2m: at VGS = 4.5V, ID = 12.3A

DS(on)

Top

Power 56

DS(on)

Bottom

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

process that has

Application

 DC - DC Conversion

Pin 1

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

TJC

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS5352 FDMS5352 Power 56 13’’ 12mm 3000 units

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 600 mJ

Power Dissipation TC = 25°C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25°C unless otherwise noted

= 25°C 88

= 25°C (Note 1a) 13.6

= 25°C (Note 1a) 2.5

°C/W

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FDMS5352 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 60 V

Breakdown Voltage Temperature Coefficient

= 250PA, referenced to 25°C 57 mV/°C

Zero Gate Voltage Drain Current VGS= 0V, VDS = 48V, 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.8 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -6.6 mV/°C

= 10V, ID = 13.6A 5.6 6.7

= 4.5V, ID = 12.3A 6.7 8.2

= 10V, ID = 13.6A, TJ= 125°C 9.7 11.6

Forward Transconductance VDD = 5V, ID = 13.6A 76 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 410 545 pF

Reverse Transfer Capacitance 225 335 pF

= 30V, VGS = 0V,

f = 1MHz

Gate Resistance f = 1MHz 1.3 :

5220 6940 pF

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 11 21 ns

Turn-Off Delay Time 58 93 ns

= 30V, ID = 13.6A,

= 10V, R

GEN

= 6:

Fall Time 715ns

Total Gate Charge VGS = 0 V t o 1 0 V

Total Gate Charge VGS = 0V to 5V 48 67 nC

Gate to Source Charge 14 nC

= 30V,

= 13.6A

Gate to Drain “Miller” Charge 17 nC

19 34 ns

93 131 nC

m:V

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting T

009 Fairchild Semiconductor Corporation

FDMS5352 Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 48 77 nC

= 25°C, L = 3mH, IAS = 20A, VDD = 60V, VGS = 10V

= 0V, IS= 13.6A (Note 2) 0.8 1.3

= 0V, IS= 2.1A (Note 2) 0.7 1.2

= 13.6A, di/dt = 100A/Ps

a. 50°C/W when mounted on a

pad of 2 oz copper.

1 in

39 63 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

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Page 3

FDMS5352 N-Channel Power Trench

Typical Characteristics T

100

VGS = 10V

, DRAIN CURRENT (A)

0.00.51.01.52.0

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

2.2

ID = 13.6A

2.0

= 10V

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

0.4

-75 -50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (

VGS = 3.5V

VGS = 4V

VGS = 4.5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

VGS = 3V

3.0

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

2.5

VGS = 3V

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 020406080100

, DRAIN CURRENT(A)

VGS = 3.5V

VGS=4.5V

=10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

ID= 13.6A

(m:)

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

= 4V

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

100

PULSE DURATION = 80Ps DUTY CYCLE = 0.5 %MAX

VDS= 5V

, DRAIN CURRENT (A)

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

009 Fairchild Semiconductor Corporation

FDMS5352 Rev.C

TJ= 150oC

TJ = 25oC

TJ = -55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

VGS= 0V

TJ= 150oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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FDMS5352 N-Channel Power Trench

Typical Characteristics T

ID= 13.6A

, GATE TO SOURCE VOLTAGE(V)

0 20406080100

Figure 7.

Gate Charge Characteristics Figure 8.

, AVALANCHE CURRENT(A)

0.1 1 10 100

tAV, TIME IN AVALANCHE(ms)

Figure 9.

Switching Capability

VDD = 30V

= 20V

Qg, GATE CHARGE(nC)

TJ= 125oC

U n c l a m p e d I n d u c t i v e

= 25°C unless otherwise noted

VDD = 40V

TJ= 25oC

500

10000

iss

1000

CAPACITANCE (pF)

100

f = 1MHz V

= 0V

0.1 1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

oss

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

, DRAIN CURRENT (A)

Limited by Package

= 1.2oC/W

TJC

VGS= 4.5V

25 50 75 100 125 150

, CASE TEMPERATURE (

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

MOSFET

= 10V

200

100

THIS AREA IS

LIMITED BY r

, DRAIN CURRENT (A)

0.1

0.01

0.01 0.1 1 10 100

DS(on)

SINGLE PULSE

= MAX RATED

= 125oC/W

TJA

= 25oC

VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

009 Fairchild Semiconductor Corporation

FDMS5352 Rev.C

1ms

10ms

100ms

10s

300

1000

), PEAK TRANSIENT POWER (W)

100

0.5

VGS = 10V

-3

-2

Figure 12.

Power Dissipation

SINGLE PULSE

= 125oC/W

TJA

= 25oC

-1

t, PULSE WIDTH ( sec)

110

100 1000

S i n g l e P u l s e M a x i m u m

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Page 5

FDMS5352 N-Channel Power Trench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

TJA

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.1

0.05

0.02

0.01

-3

-2

= 25°C unless otherwise noted

SINGLE PULSE

= 125oC/W

TJA

-1

t, RECTANGULAR PULSE DURATION (sec )

110

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

Figure 13. Transient Thermal Response Curve

1/t2

x R

+ T

TJA

100 1000

MOSFET

009 Fairchild Semiconductor Corporation

FDMS5352 Rev.C

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Page 6

Dimensional Outline and Pad Layout

FDMS5352 N-Channel Power Trench

MOSFET

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Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

PSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDMS5352 N-Channel Power Trench

MOSFET

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As used herein:

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

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