Datasheet FDML7610S Datasheet (Fairchild)

FDML7610S

Dual N-Channel PowerTrench® MOSFET

N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 4.2 mΩ at VGS = 10 V, ID = 17 A

DS(on)

= 5.5 mΩ at VGS = 4.5 V, ID = 14 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load

FDML7610S Dual N-Channel PowerTrench

April 2010

®

MOSFET

 Notebook V

D1

Pin 1

Top

MLP 3X4.5

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 28

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 40 Power Dissipation for Single Operation TA = 25 °C 2.1 T Operating and Storage Junction Temperature Range -55 to +150 °C

D1

G1

D1

S1/D2

S2

G2

Bottom

= 25 °C unless otherwise noted

A

S2

CORE

S2 S2 S2 D1

G2 G1

= 25 °C 40 60

C

= 25 °C 12

A

= 25 °C 0.8

A

1a

1a 1c

17

2.2

0.9

1b

1b 1d

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 60 Thermal Resistance, Junction to Ambient 150 Thermal Resistance, Junction to Case 4 3.5

1a

1c

56

140

1b

1d

Package Marking and Ordering Information

D1 D1

A

W

°C/WR

Device Marking Device Package Reel Size Tape Width Quantity

FDML7610S FDML7610S MLP3X4.5 13 ” 12 mm 3000 units

1

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FDML7610S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

ID = 250 µA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 µA, referenced to 25 °C ID = 10 mA, referenced to 25 °C

= 0 V

GS

VGS = VDS, ID = 250 µA VGS = VDS, ID = 1 mA

ID = 250 µA, referenced to 25 °C ID = 10 mA, referenced to 25 °C

VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V , ID = 12 A , TJ = 125 °C

VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VGS = 10 V , ID = 17 A , TJ = 125 °C

VDS = 5 V, ID = 12 A VDS = 5 V, ID = 17 A

Q1Q230

30

Q1 Q2

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

1

15 14

1.8

6.0

8.5

8.3

3.2

4.1

4.1 63

86

V

mV/°C

1

500µAµA 100

100nAnA

3 3

-6

-5

mV/°C

7.5 12 12

4.2

5.5

6

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q2: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q1: VDD = 15 V, ID = 12 A, VGS = 10 V, R

GEN

= 6 Ω

Q2: VDD = 15 V, ID = 17 A, VGS = 10 V, R

= 0 V to 10 V

GS

GEN

= 6 Ω

Q1 VDD = 15 V,

= 0 V to 4.5 V

GS

ID = 12 A

Q2 VDD = 15 V, ID = 17A

Q1 Q2

1315

1750

2960

3940

455

1135

600

1510

45

10070150

0.9

0.6

8.61318

2.5410

20 31

2.3

3.11010 20

43

9.32013

4.3

8.9

2.2

4.7

23

10 32

49

28 60

28

pF

Ω

ns

nC

2

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FDML7610S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

is determined with the devic e mo un ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 60 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 150 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 17 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/µs

F

Q2 I

= 17 A, di/dt = 300 A/µs

F

Q1 Q2

is guaranteed by design while R

θJC

b. 56 °C/W when mounted on a 1 in

d. 140 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

0.8 273543

104018

1.2

56

64

θCA

is determined

V

ns

nC

®

MOSFET

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

3

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

40

30

20

10

, DRAIN CURRENT (A)

D

I

VGS = 3.5 V

0

0.0 0.5 1.0 1 .5 2.0

Figure 1.

1.6

ID = 12 A V

= 10 V

GS

1.4

1.2

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8

-75 -50 -25 0 25 50 75 100 125 150

T

Fi g u r e 3. No r m alized O n Resist a n ce

vs Junction Temperature

VGS = 10 V

V

= 6

V

GS

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

J

o

C)

= 25 °C unless otherwise noted

J

4

3

VGS = 3.5 V

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 10203040

I

,

D

Norm a l i z e d O n - R e sistance

vs Drain Current and Gate Voltage

40

)

Ω

m

(

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

Figure 4.

TJ = 125 oC

TJ = 25 oC

V

,

GATE TO SOURCE VOLTAGE (V)

GS

On-Res istance vs Gate to

Source Voltage

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 6 V

DRAIN CURRENT (A)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 12 A

V

GS

= 4.5 V

V

GS

= 10 V

®

MOSFET

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

30

V

= 5 V

DS

20

10

, DRAIN CURRENT (A)

D

I

0

1.5 2.0 2.5 3.0 3.5 4.0

TJ = 150 oC

TJ = 25 oC

VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

40

V

= 0 V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

TJ = -55 oC

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

4

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

10

ID = 12 A

8

V

= 10 V

DD

6

4

V

DD

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

60

V

= 10 V

GS

40

V

= 4.5 V

GS

Limited by Package

20

, DRAIN CURRENT (A)

D

I

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (

C

= 20 V

VDD = 15 V

R

= 4 oC/W

θJC

o

C)

= 25 °C unless otherwise noted

J

2000 1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

10

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Capa c i t a nce v s D r ain

to Source Voltage

100

10

1

THIS AREA IS

LIMITED BY r

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

T

D

J

I

R

θJA

T

A

0.01

0.01 0.1 1 10 100

DS(on)

= MAX RATED

o

= 150

C/W

o

= 25

C

VDS, DRAIN to SOURCE VOLTAGE (V)

C

iss

C

oss

C

rss

®

MOSFET

100us

1 ms

10 ms

100 ms

1s

10s

DC

200

Figure 9.

Maximum Continuous Drain Current vs

Case Temperature

1000

100

10

, PEAK TRANSIENT POWER (W)

1

(PK)

P

0.5

-4

10

-3

10

Figure 10. Forward Bias Safe Operating Area

SINGLE PULSE R

= 150 oC/W

θJA

= 25 oC

T

A

-2

10

-1

10

t, PULSE WIDTH (s)

110

100 1000

Figure 11. Single Pulse Maximum Power Dissipation

5

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

θJA

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE R

= 150 oC/W

θJA

(Note 1c)

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (sec)

Figure 12. Junction-to-Ambient Transient Thermal Response Cu rve

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

110

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

6

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q2 SyncFET) T

40

30

20

10

, DRAIN CURRENT (A)

D

I

0

0.0 0.2 0.4 0.6 0.8

VGS = 3.5 V

VGS = 3 V

V

DS

Figure 13. On-Region Characteristics

1.6

ID = 17 A V

= 10 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

J

Figure 15. Normalized On-Resistance

vs Junction Temperature

VGS = 10 V

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

, JUNCTION TEMPERATURE (

o

C)

= 25 oC unlenss otherwise noted

J

6

5

VGS = 3 V

4

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 10203040

I

D

Figure 14. Normalized on-Resistance vs Drain

Current and Gate Voltage

20

(mΩ)

15

10

DRAIN TO

,

DS(on)

r

5

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO S OURCE VOLTAGE (V)

GS

Figure 16. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4 V

, DRAIN CURRENT (A)

ID = 17 A

TJ = 125 oC

TJ = 25 oC

V

GS

PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX

= 4.5 V

V

= 10 V

GS

®

MOSFET

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

= 5 V

30

20

10

, DRAIN CURRENT (A)

D

I

0

1.5 2.0 2.5 3.0 3.5

DS

TJ = 125 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 17. Transfer Characteristics

40

V

= 0 V

GS

10

TJ = 125 oC

1

TJ = 25 oC

0.1

, REVERSE DRAIN CURRENT (A)

S

TJ = -55 oC

I

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = -55 oC

Figure 18. Source to Drain Diode

Forward Voltage vs Source Current

7

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q2 SyncFET) T

10

ID = 17A

8

V

= 10 V

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 1020304050

Figure 19. Gate Charge Charac ter is tics

80

60

V

GS

40

DRAIN CURRENT (A)

,

20

D

I

Limited by package

0

25 50 75 100 125 150

DD

V

DD

Qg, GATE CHARGE (nC)

V

= 10 V

GS

= 4.5 V

T

,

CASE TEMPERATURE

C

= 20 V

VDD = 15 V

R

θ

JC

o

(

C

)

= 3.5 oC/W

o

= 25

C unless otherwise noted

J

5000

1000

CAPACITANCE (pF)

100

60

0.1 1 10 30

100

10

1

, DRAIN CURRENT (A)

0.1

D

I

0.01

0.01 0.1 1 10 100

f = 1 MHz

= 0 V

V

GS

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 20. Capacitance vs Drain

to Source Voltage

THIS A R EA IS

LIMITED BY r

SINGLE PULSE T

J

R

θ

T

A

DS(on

)

= MAX RATED

= 140 oC/W

JA

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

C

rss

C

iss

oss

1 ms 10 ms

100 ms

1s

10s

DC

®

MOSFET

200

Figure 21.

Maximun Continuous Drain

Current vs Case Temperature

300

100

10

), PEAK TRANSIENT POWER (W)

PK

P(

1

0.001 0.01 0.1 1 10 1 00 1000

Figure 22. Forward Bias Safe

Operating Area

t, PULSE WIDTH (sec)

Figure 23. Single Pulse Maximum Power Dissipation

8

SINGLE PULSE R

T

θJA

= 25

A

= 140

o

C/W

C

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q2 SyncFET) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

θJA

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE R

= 140 oC/W

θJA

Note 1d

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (sec)

Figure24. Junction-to-Ambient Transient Thermal Response Curve

= 25 oC unless otherwise noted

J

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

110

P

DM

t

1

t

2

x R

+ T

θJA

A

100 1000

®

MOSFET

9

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Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDML7610S Dual N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 25 shows the reverse recovery characteristic of the FDML7610S.

20

15

di/dt = 300 A/µs

10

5

CURRENT (A)

0

-5 0 50 100 150 200 250

TIME (ns)

Figure 25. FDML7610S SyncFET body diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

10000

1000

100

10

, REVERSE LEAKAGE CURRENT (A)

1

DSS

I

0 5 10 15 20 25 30

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

VDS, REVERSE VOLTAGE (V)

Figure 26. SyncFET body diode reverse leakage versus drain-source voltage

®

MOSFET

10

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Dimensional Outline and Pad Layout

FDML7610S Dual N-Channel PowerTrench

®

MOSFET

11

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tm

®

tm

The following includes registered and unregistered trademarks and se rvice marks, owned by Fairchild Semiconductor and/or it s global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

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Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

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*

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®

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

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SM

®

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDML7610S Dual N-Channel PowerTrench

®

MOSFET

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As used here in:

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time withou t notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I48