Datasheet FDMC86248 Datasheet (Fairchild)

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Page 1

FDMC86248

Top

Power 33

Bottom

Pin 1

N-Channel Power Trench® MOSFET

150 V, 13 A, 90 mΩ

Features

 Max r  Max r  Advanced Package and Silicon combination for low r

and high efficiency

 100% UIL Tested  RoHS Compliant

= 90 mΩ at VGS = 10 V, ID = 3.4 A

DS(on)

= 125 mΩ at VGS = 6 V, ID = 2.9 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

 Primary MOSFET  MV synchronous rectifier

June 2012

process that has

FDMC86248 N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86248 FDMC86248 Power 33 13 ’’ 12 mm 3000 units

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Current -Continuous TC = 25 °C 13

-Pulsed 15 Single Pulse Avalanche Energy (Note 3) 37 mJ Power Dissipation TC = 25 °C 36 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3.4 Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

= 25 °C (Note 1a) 3.4

= 25 °C (Note 1a) 2.3

A -Continuous T

°C/W

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Page 2

FDMC86248 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 120 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 104 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.2 4.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 3.4 A 69 90

= 6 V, ID = 2.9 A 89 125

= 10 V, ID = 3.4 A, TJ = 125 °C 140 183

Forward Transconductance VDS = 10 V, ID = 3.4 A 10 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 50 70 pF Reverse Transfer Capacitance 2.6 5.0 pF

= 75 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.8 2.0 Ω

393 525 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g(TOT) g(TOT) gs gd

Turn-On Delay Time Rise Time 1.4 10 ns Turn-Off Delay Time 11 20 ns

= 75 V, ID = 3.4 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 2.8 10 ns Total Gate Charge V Total Gate Charge V Total Gate Charge 1.9 nC

= 0 V to 10 V

= 0 V to 5 V 3.7 5.2 nC

VDD = 75 V, I

= 3.4 A

Gate to Drain “Miller” Charge 1.7 nC

6.9 14 ns

6.4 9.0 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

is determined with the device moun ted o n a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 mate ria l. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 37 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 5 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 12 A.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 48 77 nC

53 °C/W when mounted on a

pad of 2 oz copper

1 in

= 0 V, IS = 3.4 A (Note 2) 0.80 1.3

= 0 V, IS = 2 A (Note 2) 0.78 1.2

= 3.4 A, di/dt = 100 A/μs

θJC

54 86 ns

is guaranteed by design while R

125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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FDMC86248 N-Channel Power Trench

012345

VGS = 4.5 V

VGS = 6.5 V

VGS = 6 V

VGS = 10 V

VGS = 5 V

VGS = 5.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

03691215

VGS = 4.5 V

= 6.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 6 V

VGS = 5.5 V

VGS = 5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 3.4 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

45678910

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

, GATE TO SOURCE VOLTAG E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

234567

TJ = 25 oC

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

, DRAIN CURRENT (A)

VGS, GATE TO SO UR C E V O LT AGE (V)

0.20.40.60.81.0

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC86248 N-Channel Power Trench

02468

ID = 3.4 A

VDD = 50 V

= 75 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 100 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 4

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJC

= 3.4 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.1 1 10 100 600

0.001

0.01

0.1

10 s

10 ms

1 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AR E A IS

LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

-3

-2

-1

110

100 1000

0.5

100

500

SINGLE PULSE R

θJA

= 125

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Max imum C onti n uous D rain

Current vs Case Temperature

Fi gur e 12. Sing le P uls e Maximum

Power Dissipation

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FDMC86248 N-Channel Power Trench

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACT OR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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Page 6

FDMC86248 N-Channel Power Trench

Dimensional Outline and Pad Layout

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/or its global subsidiaries, and is n ot intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC86248 N-Channel Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the bo dy or (b ) support or sustain life, and (c) whose failure to perform when properly used in accordan ce with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are exper iencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit part s expe rience many problems such as loss of brand repu tatio n, substandar d pe rformance, f ail ed application, and increased cost of production and manufacturing delays. Fairchild is taki ng st ron g measures to prote ct ourselves and our custo mers from the proliferation of counterfeit parts. Fairchild strongl y encourages customers t o purchase Fairchil d parts either d irectly from Fairchild o r from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, me et Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or fr om authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor re serves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The data sh eet is for reference information only.

Rev. I61

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