Datasheet FDMC86240 Datasheet (Fairchild)

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FDMC86240

D D

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Pin 1

MLP 3.3x3.3

N-Channel Power Trench® MOSFET

150 V, 16 A, 51 mΩ

Features

 Max r  Max r  Low Profile - 1 mm max in Power 33  100% UIL Tested

 RoHS Compliant

= 51 mΩ at VGS = 10 V, ID = 4.6 A

DS(on)

= 70 mΩ at VGS = 6 V, ID = 3.9 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

 DC - DC Conversion

July 2010

process that has

FDMC86240 N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86240 FDMC86240 Power 33 13 ’’ 12 mm 3000 units

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 20 Single Pulse Avalanche Energy (Note 3) 34 mJ Power Dissipation TC = 25 °C 40 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3.1 Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

= 25 °C 19

= 25 °C (Note 1a) 4.6

= 25 °C (Note 1a) 2.3

°C/W

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FDMC86240 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 120 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 101 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.9 4.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 4.6 A 44.7 51

= 6 V, ID = 3.9 A 51.4 70

= 10 V, ID = 4.6 A, TJ = 125 °C 84.5 97

Forward Transconductance VDS = 10 V, ID = 4.6 A 15 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 79 105 pF Reverse Transfer Capacitance 4.3 10 pF Gate Resistance 0.5 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 1.7 10 ns Turn-Off Delay Time 14 26 ns Fall Time 3.1 10 ns Total Gate Charge V Total Gate Charge V Total Gate Charge 2.8 nC Gate to Drain “Miller” Charge 2.3 nC

= 75 V, VGS = 0 V,

f = 1 MHz

= 75 V, ID = 4.6 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 5 V 6 9 nC

= 6 Ω

GEN

VDD = 75 V, I

= 4.6 A

680 905 pF

8.2 17 ns

11 15 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

FDMC86240 Rev.C

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 63 102 nC

= 25 °C; N-ch: L = 3 mH, IAS = 4.8 A, VDD = 150 V, VGS = 10 V.

= 4.6 A, di/dt = 100 A/μs

53 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 4.6 A (Note 2) 0.79 1.3 = 0 V, IS = 2 A (Note 2) 0.75 1.2

58 93 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on a minimum pad of 2 oz copper

θCA

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is determined by

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FDMC86240 N-Channel Power Trench

012345

VGS = 4.5 V

VGS = 6 V

VGS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5%MAX

VGS = 5.5 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

= 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT(A)

= 6 V

VGS = 5 V

VGS = 4.5 V

= 5.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 4.6 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

45678910

100

150

200

ID = 4.6 A

TJ = 25 oC

TJ = 125 oC

, GATE TO SOURCE VOL TA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μ s DUTY CYCLE = 0.5%MAX

23456

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5%MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

FDMC86240 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC86240 N-Channel Power Trench

024681012

ID = 4.6 A

VDD = 75 V

= 50 V

, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD = 100 V

0.1 1 10 100

100

1000

2000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE(ms)

, AVALANCHE CURRENT(A)

25 50 75 100 125 150

Limited by Package

= 6 V

θJC

= 3.1 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.1 1 10 100 500

0.005

0.01

0.1

100 us

10 s

1 s

100 ms

10 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOL TAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

2000

VGS = 10 V

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 125 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

FDMC86240 Rev.C

Figure 11.

Operating Area

Fo rwa rd B ias Saf e

Figure 10.

Ma xim um C ont inu ous Dra in

Current vs Case Temperature

Figure 12.

Single P ulse M aximu m

Power Dissipation

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FDMC86240 N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.0005

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

= 25 °C unless otherwise noted

Figure 13. Transient Thermal Response Curve

MOSFET

FDMC86240 Rev.C

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Page 6

Dimensional Outline and Pad Layout

FDMC86240 N-Channel Power Trench

MOSFET

FDMC86240 Rev.C

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Page 7

TRADEMARKS

The following includes registered and unregistered trademarks an d service marks, owned by Fairchi ld Semiconductor and/ or its global sub sidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC86240 N-Channel Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or syst ems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. Al l manufactures of semiconductor products are exper iencing counterfeiting of th eir parts. Customers who inadvertently purchase counterfei t parts expe rience many probl ems such a s loss of b rand rep uta tio n, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchi ld is taking st rong measures to prote ct ourselve s and our customers from the proliferation of counterfeit parts. Fairchild st rongly encour ages customers to purcha se Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for part s bought from Unauthorized Sources. Fairchild is

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committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMC86240 Rev.C

Datasheet contains the design specifications for prod uct development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I48