Datasheet FDMC8622 Datasheet (Fairchild)

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Page 1

FDMC8622

D D

MLP 3.3X3.3

N-Channel Power Trench® MOSFET

100 V, 16 A, 56 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 100% UIL Tested  Termination is Lead-free and RoHS Compliant

= 56 mΩ at VGS = 10 V, ID = 4 A

DS(on)

= 100 mΩ at VGS = 6 V, ID = 3 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for ruggedness.

Application

 POE Protection Switch

March 2012

process that has

, switching performance and

DS(on)

FDMC8622 N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8622 FDMC8622 MLP 3.3X3.3 13 ’’ 12 mm 3000 units

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30 Single Pulse Avalanche Energy (Note 3) 37 mJ Power Dissipation TC = 25 °C 31 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 4.0 Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

C = 25 °C 16

A = 25 °C 4

= 25 °C (Note 1a) 2.5

°C/W

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FDMC8622 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 69 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.94V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 4 A 43.7 56

= 6 V, ID = 3 A 59.9 90

= 10 V, ID = 4 A, TJ = 125 °C 76.4 98

Forward Transconductance VDD = 10 V, ID = 4 A 8.9 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 72.5 96 pF Reverse Transfer Capacitance 4.2 6 pF

= 50 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 1.0 Ω

302 402 pF

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 1.6 10 ns Turn-Off Delay Time 10.2 18 ns

= 50 V, ID = 4 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 2.2 10 ns Total Gate Charge V Total Gate Charge V Total Gate Charge 1.4 nC

= 0 V to 10 V

= 0 V to 5 V 3.0 4.1 nC

VDD = 50 V, I

= 4 A

Gate to Drain “Miller” Charge 1.4 nC

5.9 12 ns

5.2 7.3 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 28 45 nC

= 25 °C; N-ch: L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10 V.

= 4 A, di/dt = 100 A/μs

50 °C/W when mounted on a

pad of 2 oz copper

1 in

= 0 V, IS = 4 A (Note 2) 0.8 1.3 = 0 V, IS = 1.7 A (Note 2) 0.8 1.2

36 57 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on

a minimum pad of 2 oz copper

θCA

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is determined by

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FDMC8622 N-Channel Power Trench

01234

VGS = 5 V

VGS = 10 V

VGS = 6 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

VGS = 7 V

VGS = 6.5 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20

= 10 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

, DRAIN CURRENT(A)

= 6.5 V

VGS = 6 V

VGS = 5 V

= 7 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 4 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

, JUNCTION TEMPERATURE (

246810

0.0

0.1

0.2

0.3

0.4

0.5

ID = 4 A

TJ = 25 oC

TJ = 125 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

0369

TJ = 25 oC

TJ = -55 oC

= 5 V

PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX

TJ = 150 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.4 0.6 0.8 1.0 1.2

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25°C unless otherwise noted

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC8622 N-Channel Power Trench

0123456

ID = 4 A

VDD = 25 V

= 50 V

, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD = 75 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE(ms)

, AVALANCHE CURRENT(A)

25 50 75 100 125 150

= 10 V

θJC

= 4.0 oC/W

= 6 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

Limited by Package

0.01 0.1 1 10 100 500

0.001

0.01

0.1

100

100 μs

10 ms

10 s

10 0 ms

1 s

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTA GE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

SINGLE PULSE R

θJA

= 125

C/W

= 25

VGS = 10 V

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Operating Area

Forward Bias Safe

Figure 10.

Max imum C o ntin u ous Dra in

Current vs Cas e Temp erature

Figure 12.

Si ngl e Pu lse Max imu m

Power Dissipation

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FDMC8622 N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.0001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

MOSFET

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Page 6

Dimensional Outline and Pad Layout

FDMC8622 N-Channel Power Trench

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trademar ks and service marks, owned by Fair child Semicondu ctor and/or its glo bal subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

FRFET Global Power Resource Green Bridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC8622 N-Channel Power Trench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semicondu ctor products a re experiencing counterfe iting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems su ch as l oss of bra nd reput ation , su bstan dard per fo rmance, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking st rong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild stro ngly encourages custo mers to purchase Fairchild parts eithe r directly fro m Fairchild or from A uthorized Fairchil d Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceabi lity, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping th is practice by buying direct or from authorized distribut ors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The data sheet is for reference information only.

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Rev. I61

FDMC8622 Rev.C1