Datasheet FDMC86116LZ Datasheet (Fairchild)

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FDMC86116LZ

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MLP 3.3x3.3

N-Channel Power Trench® MOSFET

100 V, 7.5 A, 103 mΩ

Features

 Max r  Max r  HBM ESD protection level > 3 KV typical (Note 4)  100% UIL Tested

 RoHS Compliant

= 103 mΩ at VGS = 10 V, ID = 3.3 A

DS(on)

= 153 mΩ at VGS = 4.5 V, ID = 2.7 A

DS(on)

General Description

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Application

 DC - DC Conversion

December 2011

process

FDMC86116LZ N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86116Z FDMC86116LZ Power 33 13 ’’ 12 mm 3000 units

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 7.5

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 15 Single Pulse Avalanche Energy (Note 3) 12 mJ Power Dissipation TC = 25 °C 19 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 6.5 Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

= 25 °C 9.6

= 25 °C (Note 1a) 3.3

= 25 °C (Note 1a) 2.3

°C/W

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FDMC86116LZ N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 73 mV/°C

= 0 V 1 μA

= 0 V ±10 μA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.8 2.2 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 3.3 A 79 103

= 4.5 V, ID = 2.7 A 105 153

= 10 V , ID = 3.3 A, TJ = 125 °C 136 178

Forward Transconductance VDS = 5 V, ID = 3.3 A 11 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 45 60 pF Reverse Transfer Capacitance 2.4 5 pF Gate Resistance 0.7 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 1.3 10 ns Turn-Off Delay Time 10 20 ns Fall Time 1.4 10 ns Total Gate Charge V Total Gate Charge V Total Gate Charge 0.8 nC Gate to Drain “Miller” Charge 0.7 nC

= 50 V, VGS = 0 V,

f = 1 MHz

= 50 V, ID = 3.3 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 4.5 V 2 3 nC

GEN

= 6 Ω

= 50 V,

= 3.3 A

232 310 pF

4.5 10 ns

46nC

mΩV

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 3.3 A (Note 2) 0.85 1.3

NOTES:

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 5.0 A, VDD = 90 V, VGS = 10 V.

4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 23 38 nC

53 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 2 A (Note 2) 0.82 1.2

= 3.3 A, di/dt = 100 A/μs

33 54 ns

is guaranteed by design while R

θJC

125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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FDMC86116LZ N-Channel Power Trench

012345

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

VGS = 4 V

VGS = 3 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

03691215

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

, DRAIN CURRENT (A)

= 4 V

VGS = 4.5 V

VGS = 3 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 3.3 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

, JUNCTION TEMPERATURE (

246810

100

200

300

400

500

TJ = 125 oC

ID = 3.3 A

TJ = 25 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

123456

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

MOSFET

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC86116LZ N-Channel Power Trench

012345

ID = 3.3 A

= 75 V

= 25 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

100

1000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

0 4 8 12 16 20 24 28 32 36

-9

-8

-7

-6

-5

-4

-3

-2

-1

= 0 V

TJ = 125 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

, GATE LEAKAGE CURRENT (A)

25 50 75 100 125 150

Limited by package

= 4.5 V

θJC

= 6.5 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.1 1 10 100 400

0.005

0.01

0.1

100 ms

10 s

10 ms

100 us

1 s

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

= 25

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25 °C unless otherwise noted

Figure 8.

Capacitance vs Drain

to Source Voltage

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

F i g u r e 1 1 . M a x i m u m C o n t i n u o u s D r a i n

urrent vs Case Temperature

Figure 10.

Figure 12.

Gate Leakage Current vs Gate to

Source Voltage

Forward Bias Safe

Operating Area

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FDMC86116LZ N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.5

100

500

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 125 oC/W

= 25 oC

t, PULSE WIDTH (sec)

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE D U R ATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Single Pulse Maximum Power Dissipation

= 25 °C unless otherwise noted

MOSFET

Figure 14.

Junction-to-Ambient Transient Thermal Response Curve

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Page 6

Dimensional Outline and Pad Layout

FDMC86116LZ N-Channel Power Trench

MOSFET

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Page 7

TRADEMARKS

™

The following includes registered and unregistered trademar ks and service marks, owned by Fair child Semicondu ctor and/or its glo bal subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

FPS™ F-PFS™

FRFET Global Power Resource GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

FDMC86116LZ N-Channel Power Trench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semicondu ctor products a re experiencing counterfe iting of their

parts. Customers who inadvertently purchase counterfeit parts exper ience many pr oblems su ch as l oss of brand reputation , substan dard per fo rmance, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking st rong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild stro ngly encourages custo mers to purchase Fairchild parts eithe r directly fro m Fairchild or from A uthorized Fairchil d Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceabi lity, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping th is practice by buying direct or from authorized distribut ors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The data sheet is for reference information only.

Rev. I60

FDMC86116LZ Rev.C