Datasheet FDMC8588DC Datasheet (Fairchild)

FDMC8588DC

Top

Power 33

Bottom

D

D

D

D

G

S

S

S

Pin 1

Pin 1

S

S

S

G

D

D

D

D

N-Channel PowerTrench® MOSFET

25 V, 40 A, 5.7 mΩ

Features

 Max r

 State-of-the-art switching performance

 Lower output capacitance, gate resistance, and gate charge

boost efficiency

 Shielded gate technology reduces switch node ringing and

increases immunity to EMI and cross conduction

 RoHS Compliant

= 5.7 mΩ at VGS = 4.5 V, ID = 17 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.

Applications

 High side switching for high end computing

 High power density DC-DC synchronous buck converter

, fast switching speed and body

DS(on)

FDMC8588DC N-Channel PowerTrench

June 2012

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage (Note 5) 25 V

Gate to Source Voltage (Note 4) ±12 V

Drain Current - Continuous (Package limited) TC = 25 °C 40

- Continuous (Silicon Limited) T

- Continuous (Note 1a) 17

- Pulsed 60

Single Pulse Avalanche Energy (Note 3) 29 mJ

Power Dissipation TC = 25 °C 41

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 73

C

= 25 °C (Note 1a) 3.0

A

A

W

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Case (Top Source) 7.0

Thermal Resistance, Junction to Case (Bottom Drain) 3.0

Thermal Resistance, Junction to Ambient (Note 1a) 42

Thermal Resistance, Junction to Ambient (Note 1b) 105

Thermal Resistance, Junction to Ambient (Note 1i) 17

Thermal Resistance, Junction to Ambient (Note 1j) 26

Thermal Resistance, Junction to Ambient (Note 1k) 12

08DC FDMC8588DC

Power 33

13 ’’ 12 mm 3000 units

°C/W

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

1

www.fairchildsemi.com

FDMC8588DC N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 μA , VGS = 0 V 25 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 20 V, V

Gate to Source Leakage Current, Forward VGS = 12 V, V

I

= 250 μA , referenced to 25 °C 5 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.8 1.2 1.8 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA , referenced to 25 °C -4 mV/°C

D

V

= 10 V, ID = 18 A 3.6 5.0

GS

= 4.5 V, ID = 17 A 4.1 5.7

GS

= 10 V, ID = 18 A,TJ = 125 °C 5.5 7.6

V

GS

Forward Transconductance VDD = 5 V, ID = 17 A 103 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 493 pF

Reverse Transfer Capacitance 63 pF

Gate Resistance 0.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 3ns

Turn-Off Delay Time 25 ns

Fall Time 2ns

Total Gate Charge at 4.5V

Total Gate Charge 3.0 nC

Gate to Drain “Miller” Charge 3.0 nC

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

= 13 V, ID = 17A,

V

DD

V

= 10 V, R

GS

= 13 V, ID = 17 A

V

DD

GEN

= 6 Ω

1695 pF

8ns

12 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 10 nC

V

= 0 V, IS = 2 A (Note 2) 0.7 1.2 V

GS

= 0 V, IS = 17 A (Note 2) 0.8 1.2 V

V

GS

= 17 A, di/dt = 100 A/μs

I

F

2

25 ns

www.fairchildsemi.com

Thermal Characteristics

FDMC8588DC N-Channel PowerTrench

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Thermal Resistance, Junction to Case (Top Source) 7.0

Thermal Resistance, Junction to Case (Bottom Drain) 3.0

Thermal Resistance, Junction to Ambient (Note 1a) 42

Thermal Resistance, Junction to Ambient (Note 1b) 105

Thermal Resistance, Junction to Ambient (Note 1c) 29

Thermal Resistance, Junction to Ambient (Note 1d) 40

Thermal Resistance, Junction to Ambient (Note 1e) 19

Thermal Resistance, Junction to Ambient (Note 1f) 23

Thermal Resistance, Junction to Ambient (Note 1g) 30

Thermal Resistance, Junction to Ambient (Note 1h) 79

Thermal Resistance, Junction to Ambient (Note 1i) 17

Thermal Resistance, Junction to Ambient (Note 1j) 26

Thermal Resistance, Junction to Ambient (Note 1k) 12

Thermal Resistance, Junction to Ambient (Note 1l) 16

a.

42 °C/W when mounted on a
1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b.

105 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

°C/W

®

MOSFET

SF

SS

DS

DF

SF

SS

DS

DF

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper

d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper

f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in

j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in

l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

5. The continuous Vds rating is 25V; however, a pulse of 28 V peak voltage for no longer than 3ns duration at 500KHz frequency can be applied.

G

2

pad of 2 oz copper

2

pad of 2 oz copper

of 29 mJ is based on starting TJ = 25 °C, L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10V. 100% tested at L = 0.1 mH, IAS = 16 A.

AS

G

2

pad of 2 oz copper

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

3

www.fairchildsemi.com

FDMC8588DC N-Channel PowerTrench

0.0 0.2 0.4 0.6

0

10

20

30

40

50

60

VGS = 2.5 V

VGS = 3 V

VGS = 4 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 102030405060

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 4 V VGS = 3 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 2.5 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 17 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

0246810

0

5

10

15

20

TJ = 125 oC

ID = 17 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

50

60

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.00.20.40.60.81.01.2

0.1

1

10

60

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLT AGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

vs Drain Current and Gate Voltage

N o r m a l i z e d O n - R e s i s t a n c e

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

Figure 5. Transfer Characteristics

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

4

www.fairchildsemi.com

FDMC8588DC N-Channel PowerTrench

03691215

0.0

0.9

1.8

2.7

3.6

4.5

ID = 17 A

VDD = 15 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 13 V

0.1 1 10 30

30

100

1000

3000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.001 0.01 0.1 1 10 100

1

10

50

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TI ME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

20

40

60

80

V

GS

= 4.5 V

R

θJC

= 3.0 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

Limited by Package

0.01 0.1 1 10 100200

0.01

0.1

1

10

100

100 μs

10 ms

10 s

100 ms

DC

1 s

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 105

o

C/W

T

A

= 25

o

C

10-410-310-210-110010

1

100 1000

0.5

1

10

100

1000

SINGLE PULSE
R

θJA

= 105

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25°C unless otherwise noted

J

Figure 8.

C a p a c i t a n c e v s D r a i n

to Source Voltage

®

MOSFET

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

F ig u re 1 1. F or w ar d B ia s Sa f e

Op

erating Area

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

Figure 12.

S i n g l e P u l s e M a x i m u m

Power Dissipation

5

www.fairchildsemi.com

FDMC8588DC N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100 1000

5E-4

1E-3

0.01

0.1

1

2

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

θJA

= 105 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25°C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

6

www.fairchildsemi.com

Dimensional Outline and Pad Layout

DE TA IL A

SCALE: 2X

41

85

LA ND PATTERN

REC OMMENDATION

L

C

SYM

PKG

C

L

NOTES: UNLESS OTHERWISE SPECIFIED

A) PACKAGE STAND ARD REFE RENC E:
JEDEC MO-24 0, ISSUE A, VAR. BA,
DATED OCTOBER 2002.
B) ALL DIMENSIO N S AR E IN MILL IMET E RS .
C) D IMENSIONS DO NOT INCL UD E BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
E) IT IS R ECOMMENDED TO HAVE NO

TRACES OR VIAS WITHIN THE KEEP OUT

AR EA .

F) DR AWING FIL E NAME: P QFN0 8CREV3.

14

85

3.40

3.20

C

L

PKG

A

3.40

3.20

B

C

L

PKG

2.37 MIN

(0.45)

(0.40)

(0.65)

0.70 MIN

0.42 MIN0.65

1.95

2.15 MIN

SEE DETAIL 'A'

1.05

0.95

0.10 C

0.08 C

0.23

0.18

0.05

0.00

SEATING
PLANE

C

0.37

0.27

1.95

0.65

0.50

0.30

2.10

1.90

(2 .27 )

0.52

(0.20)

(0.39)

0.10 C A B

14

85

PKG

C

L

KEEP
OUT

AREA

(0.62)

(0.98)

3.40

1.70

FDMC8588DC N-Channel PowerTrench

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDMC8588DC Rev.C

7

www.fairchildsemi.com

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®

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tm

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC8588DC N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I61

©2012 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FDMC8588DC Rev.C