Datasheet FDMC8554 Datasheet (Fairchild)

February 2007

FDMC8554 N-Channel PowerTrench

FDMC8554 N-Channel Power Trench

20V, 16.5A, 5mΩ Features

 Max r  Max r  Low Profile - 1mm max in a MicroFET 3.3x3.3 mm  RoHS Compliant

= 5mΩ at VGS = 10V, ID = 16.5A

DS(on)

= 6.4mΩ at VGS = 4.5V, ID = 14A

DS(on)

Bottom

8

7

6

5

3

4

D

1

2

®

MOSFET

Top

D

General Description

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson.

Application

 Synchronous rectifier  O

Ring FET

 POL rectifier

G

S

tm

®

MOSFET

D

5

D

6 7

D D

8

G

4 3

S

2

S

1

S

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8554 FDMC8554 Power 33 7’’ 8mm 3000 units

Drain to Source Voltage 20 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25°C 16.5

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 36 Power Dissipation TC = 25°C 41 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3 Thermal Resistance, Junction to Ambient (Note 1a) 60

= 25°C unless otherwise noted

A

= 25°C 72

C

= 25°C (Note 1a) 16.5

A

= 25°C (Note 1a) 2.0

A

1

A

W

°C/W

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FDMC8554 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current VGS = ±20V, V

I

= 250µA, referenced to 25°C 15.7 mV/°C

D

V

= 16V, 1

DS

= 0V TJ = 125°C 100

V

GS

= 0V ±100 nA

DS

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.8 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= 250µA, referenced to 25°C -6.1 mV/°C

D

V

= 10V, ID = 16.5A 3.6 5.0

GS

= 4.5V, ID = 14A 4.6 6.4

GS

= 10V , ID = 16.5A, TJ = 125°C 5.4 7.1

V

GS

Forward Transconductance VDS = 5V, ID = 16.5A 62 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance 795 1060 pF Reverse Transfer Capacitance 510 765 pF

= 10V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.2 Ω

2540 3380 pF

mΩV

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time Rise Time 10 20 ns Turn-Off Delay Time 32 51 ns Fall Time 714ns Total Gate Charge at 10V Total Gate Charge at 4.5V 24 34 nC Gate to Source Gate Charge 8.5 nC Gate to Drain “Miller” Charge 10 nC

VDD = 10V, ID = 16.5A V

= 10V, R

GS

GEN

VDD = 10V, ID = 16.5A

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 mat erial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 22 33 nC

a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper

= 0V, IS = 16.5A (Note 2) 0.8 1.3 V

GS

= 16.5A, di/dt = 100A/µs

I

F

= 6Ω

13 24 ns

44 62 nC

31 47 ns

is guaranteed by design while R

θJC

b. 135°C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMC8554 Rev.C

2

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FDMC8554 N-Channel PowerTrench

Typical Characteristics T

200

V

=5V

150

100

50

, DRAIN CURRENT (A)

D

I

0

012345

VDS, DRAIN TO SOURCE VOLTA GE (V)

Figure 1. O n - R e g i o n C h aracteristics Figure 2. N ormaliz e d O n - R e s i s t a n c e

1.6

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RES ISTANCE

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figu r e 3 . Normal i z e d On- Res i s tance

vs Junction Temperature

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

75

V

= 5V

DD

50

, DRAIN CURRENT ( A)

25

D

I

0

01234

VGS, GATE TO SOURCE VOLTA GE (V)

Figu re 5. Transfer Char acteristi cs Figure 6. Sourc e to Drain Diode

GS

V

= 10V

GS

PULSE DURA TION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 25oC

= 25°C unless otherwise noted

J

VGS = 4.5V

VGS = 4V

VGS = 3.5V

ID = 16.5A V

= 10V

GS

TJ = 150oC

TJ = -55oC

3

V

= 3.5V

GS

2

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

V

= 4V

GS

V

GS

=4.5V

1

NORMALIZED

0

0 50 100 150 2 00

DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT(A)

VGS = 10V

vs Drain Current and Gate Voltage

20

ID = 16.5A

(mΩ)

15

10

, DRAIN TO

DS(on)

r

5

SOURCE ON-RESISTANCE

0

345678910

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

TJ = 25oC

Figure 4. On-Resistance vs Gate to

Source Voltage

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150oC

TJ = -55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Forward Voltage vs Source Current

V

GS

TJ = 25oC

= 5V

®

MOSFET

FDMC8554 Rev.C

3

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FDMC8554 N-Channel PowerTrench

Typical Characteristics T

10

ID = 16.5A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

0

GS

V

0 1020304050

Qg, GATE CHARGE(nC)

Figure 7. G a t e C h a r g e Charac te r i s t i c s Figure 8. C a p a c i t a n c e v s D r a i n

40

10

, AVALANCHE CURRENT(A)

AS

I

1

-2

10

-1

10

tAV, TIME IN AVALANCHE(ms)

Fig u r e 9 . Uncl a m p e d In d u c t i ve

Switching Capability

100

r

LIMITED

DS(on)

10

1

SINGLE PULSE

0.1

, DRAIN CURRENT (A)

D

I

0.01

= MAX RATED

T

J

R

=135OC/W

θJA

= 25OC

T

A

0.01 0.1 1 10 100

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

TJ = 125oC

0

10

V

DD

= 5V

VDD = 15V

= 25°C unless otherwise noted

J

VDD = 10V

TJ = 25oC

1

10

2

10

1ms

10ms

100ms

1s 10s

DC

3

10

5000

1000

C

iss

C

oss

C

rss

CAPACITANCE (pF)

f = 1MHz V

= 0V

GS

100

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

80

60

V

= 10V

GS

40

Limited by Package

, DRAIN CURRENT (A)

20

D

I

R

= 3oC/W

θJC

0

25 50 75 100 125 150

V

= 4.5V

GS

TC, CASE TEMPERAT URE (oC)

Fi gur e 10. Maximum Co nti nuo us Drain

Current vs Ambient Temperature

300

100

VGS = 10V

10

SINGLE PULSE

O

R

=135

1

), PEAK TRANSIENT POWER (W)

PK

0.5

P(

-3

10

C/W

θJA

-2

10

t, PULSE WID T H (s )

TA = 25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

-1

10

10010

o

C DERATE PEAK

150 TA–

---------------------- -

25

1

125

2

10

Figure 1 2. S ingle Pulse Maximum

Power Dissipation

20

®

MOSFET

3

10

FDMC8554 Rev.C

4

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FDMC8554 N-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE R

θJA

-3

10

-2

10

θJA

IMPEDANCE, Z

NORMALIZED THERMAL

0.002

= 25°C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t1/t

= 135oC/W

-1

10

0

10

PEAK TJ = PDM x Z

1

10

t, RECTANGULAR PULSE DURATION(s)

Figure 13. Transient Thermal Response Curve

P

θJA

DM

3

10

®

x R

10

t

1

t

2

+ T

θJA

A

2

MOSFET

FDMC8554 Rev.C

5

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FDMC8554 N-Channel PowerTrench

®

MOSFET

FDMC8554 Rev.C

6

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

E

CMOS™

EnSigna™

®

FACT

®

FAST FASTr™ FPS™ FRFET™

FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™

2

I

C™

i-Lo™

ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™

Across the board. Around the world.™ The Power Franchise

®

OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™

SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic

®

TINYOPTO™ TruTranslation™

®

UHC

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

UniFET™ VCX™ Wire™

FDMC8554 N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

FDMC8554 Rev.C

Rev. I22

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